Abstract: A power supply management method applied to a charging station system including a plurality of battery swapping cabinets and an AC discharging cabinet. Each battery swapping cabinet receives an AC mains, and includes a plurality of batteries. The method includes steps of: (a) determining that the AC mains fails to supply power normally so that the batteries cannot be powered by the AC mains and operated in a power-off idle mode, (b) selecting one of the batteries to discharge for providing the power required by the charging station system, (c) determining the selected battery is in a discharging and loaning mode to select one battery swapping cabinet to operate in a discharging mode, and (d) supplying power to the AC discharging cabinet by converting the power of the battery through the selected battery swapping cabinet.

Abstract: A battery swapping cabinet includes an AC-to-DC converter, a plurality of charging/discharging DC converters, a plurality of batteries, a first auxiliary DC converter, and a main board. The AC-to-DC converter converts an AC power supply into a DC bus voltage. The charging/discharging DC converters respectively receive the DC bus voltage and convert the DC bus voltage into a plurality of DC voltages. The plurality of batteries receives the plurality of DC voltages. The first auxiliary DC converter receives the DC bus voltage and converts the DC bus voltage into a first state voltage. The main board receives the first state voltage and a second state voltage. According to a state of the AC power supply, the main board provides the first state voltage or the second state voltage to the plurality of batteries to maintain the power required for the uninterrupted operation of the plurality of batteries.

Abstract: Semiconductor devices and methods are disclosed herein. In one example, a disclosed semiconductor device includes: an insulation layer, a first electrode with sidewalls and a bottom surface in contact with the insulation layer; a second electrode with sidewalls and a bottom surface in contact with the insulation layer; and an insulator formed between the first electrode and the second electrode. The insulator is coupled to a sidewall of the first electrode and coupled to a sidewall of the second electrode.

Abstract: A semiconductor device includes: a substrate; a channel layer disposed on the substrate, wherein the channel layer is made of GaN; a barrier layer disposed on the channel layer, wherein the barrier layer is made of AlzGa1-zN; and an inserting structure inserted between the channel layer and the barrier layer. The inserting structure includes: a first inserting layer disposed on the channel layer, wherein the first inserting layer is made of AlxGa1-xN; and a second inserting layer disposed on the first inserting layer, wherein the second inserting layer is made of AlyGa1-yN, and y is greater than x. The semiconductor device further includes: a gate electrode disposed on the barrier layer; a source electrode and a drain electrode disposed on the barrier layer and respectively at opposite sides of the gate electrode; and a spike region formed below at least one of the source electrode and the drain electrode.

Abstract: A hidden shackle style lock is disclosed. The lock has a substantially cylindrical housing having a top surface, a bottom surface, and a curved side surface. The lock also has a first cavity on the bottom surface of the housing which extends part way along a thickness of the housing, and a second cavity on the side surface intersecting with the first cavity. The lock further includes has a hollow sleeve slidably attached within the second cavity. The sleeve has a first end face, a second end face, and a third cavity. The third cavity extends from the first end face to the second face and is substantially coaxial with the second cavity. A shackle is coupled to the first end face of the sleeve. A core member with a locking mechanism is disposed within the third cavity and coupled to the shackle. A driver member is located between the core member and the shackle and couples the core member to the shackle.

Abstract: A hidden shackle style lock is disclosed. The lock includes a substantially cylindrical housing having a top surface, a bottom surface, and a curved side surface. The lock also includes a first cavity on the bottom surface of the housing extending part way along a thickness of the housing, and a second cavity on the side surface intersecting with the first cavity. A hollow sleeve is slidably attached within the second cavity. The sleeve includes a first end face, a second end face, and a third cavity. The third cavity extends from the first end face to the second face and is substantially coaxial with the second cavity. A shackle having a first end and a second end is fixedly coupled to the first end face of the sleeve. The lock also includes an interchangeable core having a first locking mechanism and a second locking mechanism lockingly disposed within the third cavity, and coupled to the straight shackle.

Abstract: A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

Abstract: A bone anchor comprises a screw body and a flange, which are joined together in a way to keep their rotation independent from each other. In implanting the screw body into a bone, the flange does not rotate to prevent twisting and/or snarling of the suture in wounded bone from occurring.

Abstract: A surgical clamp includes first and second supports respectively having first and second engagement sections. The first and second supports are pivotably connected at a connection by a pivotal portion such that the first and second supports are pivotable about a pivot axis extending through the connection. An opening is defined between the first and second engagement sections for receiving a bone of a patient. A connecting tube includes a first end fixed to the connection. A guiding tube includes an end connected to a second end of the connecting tube and is located in a central plane of the opening between the first and second engagement sections. The central plane includes the pivot axis and has equal spacing to the first and second engagement sections. A sliding rod is fixed to the connecting tube and includes a sliding groove slideably receiving a pole located on the pivotal portion.

Abstract: The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The first pattern is different from the second pattern. The at least one electrode is formed on the top-most layer.

Abstract: A high efficiency lighting device comprising a light emitting diode structure, an eutectic layer and a distributed-Bragg reflecting layer (DBR) therebetween is disclosed. The distributed-Bragg reflecting layer is attached to said light emitting diode structure by vapor deposition and comprises a plurality of high refraction layers, a plurality of low refraction layers and a micro-contact layer array. The high refraction layers and said low refraction layers are arranged in an alternating manner, so as to form a stacked thin film having an alternate high/low refraction pattern. The micro-contact layers are in said stacked thin film and extend vertically through the stacked thin film, therefore connecting said light emitting diode structure and said eutectic layer.

Abstract: The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

Abstract: The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

Abstract: The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

Abstract: A method for fabricating a high efficiency lighting device and the structure thereof are disclosed. The method includes the following steps: providing a light emitting diode structure; attaching a distributed-Bragg reflecting layer (DBR) to the light emitting diode structure by vapor deposition; and connecting the light emitting diode structure to a eutectic layer through the distributed-Bragg reflecting layer to form the high efficiency lighting device.

Abstract: A high efficiency luminous device and a manufacturing method thereof are disclosed. The high efficiency luminous device includes a LED structure, a first metal electrode, and a second metal electrode. The LED structure is for emitting light. The first metal electrode is formed on the LED structure, and the first metal electrode has a plurality of first openings therein. The second metal electrode is formed on the LED structure, and the second metal electrode has a plurality of second openings therein. The plurality of first openings and the plurality of second openings allow the light emitted from the LED structure to pass therethrough.

Abstract: The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

Abstract: The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. Each bump structure is made of ITO, SiO2, SiN, ZnO, polymide, BCB, SOG, InO, or SnO.

Abstract: A semiconductor light-emitting device and a method of fabricating the same are provided. The semiconductor light-emitting device includes a substrate, a multi-layer structure and an ohmic electrode structure. The substrate has a first upper surface and a plurality of first recesses formed in the first upper surface. The multi-layer structure is formed on the first upper surface of the substrate and includes a light-emitting region. A bottom-most layer of the multi-layer structure is formed on the first upper surface of the substrate. The bottom-most layer has a second upper surface and a plurality of second recesses formed in the second upper surface. The second recesses project on the first upper surface. The ohmic electrode structure is formed on the multi-layer structure.

Abstract: The invention discloses a semiconductor light-emitting device and a fabricating method thereof. The semiconductor light-emitting device according to the invention includes a substrate, a multi-layer structure, a top-most layer, and at least one electrode. The multi-layer structure is formed on the substrate and includes a light-emitting region. The top-most layer is formed on the multi-layer structure, and the lower part of the sidewall of the top-most layer exhibits a first surface morphology relative to a first pattern. In addition, the upper part of the sidewall of the top-most layer exhibits a second surface morphology relative to a second pattern. The at least one electrode is formed on the top-most layer. Therefore, the sidewall of the semiconductor light-emitting device according to the invention exhibits a surface morphology, which increases the light-extraction area of the sidewall, and consequently enhances the light-extraction efficiency of the semiconductor light-emitting device.