Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: A lighting module, an electronic device, and a display panel are provided. The lighting module includes a carrier, a first metal circuit layer, a first transparent conductive layer, a first insulating layer, a second transparent conductive layer, a second metal circuit layer, a bonding structure layer, and a plurality of lighting units. The bonding structure layer is configured to allow the second metal circuit layer to be well bonded to the first insulating layer, so that a resistance value of the lighting module is decreased, and a pressure drop is reduced.

Abstract: A metal-insulator-metal (MIM) device may include a first metal layer. The MIM device may include an insulator stack on the first metal layer. The insulator stack may include a first high dielectric constant (high-K) layer on the first metal layer. The insulator stack may include a low dielectric constant (low-K) layer on the first high-K layer. The insulator stack may include a second high-K layer on the low-K layer. The MIM device may include a second metal layer on the insulator stack.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: The invention concerns personal wellness products comprising: a self-lubricating, tough hydrogel material, the hydrogel material optionally comprising a double interpenetrating network (D-IPN) matrix.

Abstract: A semiconductor arrangement includes an isolation structure having a first electrical insulator layer in a trench in a semiconductor substrate and a second electrical insulator layer in the trench and over the first electrical insulator layer.

Abstract: A semiconductor processing system is provided to form a capacitor dielectric layer in a metal-insulator-metal capacitor. The semiconductor processing system includes a precursor tank configured to generate a precursor gas from a metal organic solid precursor, a processing chamber configured to perform a plasma enhanced chemical vapor deposition, and at least one buffer tank between the precursor tank and the processing chamber. The at least one buffer tank is coupled to the precursor tank via a first pipe and coupled to the processing chamber via a second pipe.

Abstract: A power supply array system includes N first receiving devices and a power supply array device capable of generating N voltages. The power supply array device includes M adjustable power control boards, an adjustable input/output circuit board, and a controller. The M adjustable power control boards are used for outputting the N voltages. Each adjustable power control board has a plurality of output terminals. Each output terminal is used for outputting a voltage. The adjustable input/output circuit board is coupled to the plurality of output terminals of each adjustable power control board for detecting a voltage and a current of each output terminal. The controller is used for receiving data of the voltage and the current of the each output terminal of the each power control board accordingly. N and M are two integers greater than two and N>M.

Abstract: An inter-integrated circuit bus arbitration system includes a first master circuit, a second master circuit, an analog switch circuit, an initial state identification circuit, and a selection control circuit. When the first master circuit is initiated to transmit data, the initial state identification circuit generates a first initial pulse signal. When the second master circuit is initiated to transmit data, the initial state identification circuit generates a second initial pulse signal. If the first initial pulse signal leads the second initial pulse signal, the selection control circuit generates a first control signal to make the analog switch circuit establish electrical connections between the first master circuit and an external data line and an external clock line when receiving the first control signal.

Abstract: An inter-integrated circuit bus arbitration system includes a first master circuit, a second master circuit, an analog switch circuit, an initial state identification circuit, and a selection control circuit. When the first master circuit is initiated to transmit data, the initial state identification circuit generates a first initial pulse signal. When the second master circuit is initiated to transmit data, the initial state identification circuit generates a second initial pulse signal. If the first initial pulse signal leads the second initial pulse signal, the selection control circuit generates a first control signal to make the analog switch circuit establish electrical connections between the first master circuit and an external data line and an external clock line when receiving the first control signal.

Abstract: A power supply array system includes N first receiving devices and a power supply array device capable of generating N voltages. The power supply array device includes M adjustable power control boards, an adjustable input/output circuit board, and a controller. The M adjustable power control boards are used for outputting the N voltages. Each adjustable power control board has a plurality of output terminals. Each output terminal is used for outputting a voltage. The adjustable input/output circuit board is coupled to the plurality of output terminals of each adjustable power control board for detecting a voltage and a current of each output terminal. The controller is used for receiving data of the voltage and the current of the each output terminal of the each power control board accordingly. N and M are two integers greater than two and N>M.

Abstract: A thermally assisted magnetic write head includes a waveguide having a first end surface included in an air bearing surface; a magnetic pole having a second end surface included in the air bearing surface; a plasmon generator having a third end surface included in the air bearing surface; a first protective film directly covering a part of the second end surface of the magnetic pole at least; and a second protective film directly covering the first end surface of the waveguide and the third end surface of the plasmon generator. The configuration can reduce recording density and improve thermal stability, furthermore increase the producing yield.

Abstract: An electronic device with a function of distinguishing working state of option menus includes an input unit, a display unit, and a processing unit. The processing unit includes a display control module. The display control module displays a function setting interface. The function setting interface includes a first display area for displaying the option menus whose functions are activated and a second display area for displaying the option menus whose functions are not activated. A method with a function of distinguishing working state of option menus is also provided.