Patents by Inventor Weiliang Feng

Weiliang Feng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240172450
    Abstract: A ferroelectric memory includes a substrate and a plurality of memory cells formed on the substrate. Each memory cell includes a transistor and a plurality of ferroelectric capacitors. In other words, each memory cell includes at least two ferroelectric capacitors to implement multi-bit data storage. The transistor and the plurality of ferroelectric capacitors are arranged in a first direction perpendicular to the substrate. Any ferroelectric capacitor includes a first electrode layer, a second electrode layer, and a ferroelectric layer formed between the first electrode layer and the second electrode layer. The first electrode layers of every two adjacent ferroelectric capacitors of the plurality of ferroelectric capacitors are in contact, to form a shared first electrode layer that extends in the first direction.
    Type: Application
    Filed: January 25, 2024
    Publication date: May 23, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Weiliang Jing, Kailiang Huang, Junxiao Feng, Zhengbo Wang
  • Publication number: 20240121942
    Abstract: A memory comprises a substrate and a plurality of storage units formed on the substrate. Each of the storage units includes a transistor and a capacitor electrically connected to the transistor. The transistor includes a gate, a semiconductor layer, a first electrode, a second electrode, and a gate dielectric layer. The first electrode and the second electrode are arranged in a first direction. The gate is located between the first electrode and the second electrode. The semiconductor layer is located on one of two opposite sides of the gate in a second direction. The semiconductor layer is electrically connected separately to the first electrode and the second electrode, the gate and the semiconductor layer are isolated from each other by the gate dielectric layer, and the second direction is a direction parallel to the substrate.
    Type: Application
    Filed: December 16, 2023
    Publication date: April 11, 2024
    Applicant: HUAWEI TECHNOLOGIES CO., LTD.
    Inventors: Weiliang Jing, Kailiang Huang, Junxiao Feng, Zhengbo Wang
  • Patent number: 10252217
    Abstract: Aspects of the invention pertain to catalytic articles and methods of making catalytic articles comprising a first catalytic coating comprising a platinum group metal, wherein the first catalytic coating is substantially free of Cu, Ni, Fe, Mn, V, Co, Ga, Mo, Mg, Cr and Zn; a second catalytic coating comprising a non-PGM metal, wherein the second catalytic coating is substantially free of any platinum group metal; and one or more substrates, wherein the first catalytic coating is separated from the second catalytic coating, optionally with a barrier layer.
    Type: Grant
    Filed: May 27, 2015
    Date of Patent: April 9, 2019
    Assignee: BASF Corporation
    Inventors: Qinglin Zhang, Ye Liu, Pascaline Harrison Tran, Xinsheng Liu, Michelle Casper, Michael P. Galligan, John R. Adomaitis, Shau-Lin F. Chen, Weiliang Feng
  • Publication number: 20150352493
    Abstract: Aspects of the invention pertain to catalytic articles and methods of making catalytic articles comprising a first catalytic coating comprising a platinum group metal, wherein the first catalytic coating is substantially free of Cu, Ni, Fe, Mn, V, Co, Ga, Mo, Mg, Cr and Zn; a second catalytic coating comprising a non-PGM metal, wherein the second catalytic coating is substantially free of any platinum group metal; and one or more substrates, wherein the first catalytic coating is separated from the second catalytic coating, optionally with a barrier layer.
    Type: Application
    Filed: May 27, 2015
    Publication date: December 10, 2015
    Inventors: Qinglin Zhang, Ye Liu, Pascaline Harrison Tran, Xinsheng Liu, Michelle Casper, Michael P. Galligan, John R. Adomaitis, Shau-Lin F. Chen, Weiliang Feng