Abstract: The present disclosure provides a temperature field device for crystal growth. The temperature field device may include a drum; a filler filled in the drum and configured to support a crucible; a bottom plate mounted on a bottom of the temperature field device and covering a bottom end of the drum; and a cover plate mounted on a top of the temperature filed device and covering a top end of the drum.

Abstract: Embodiments of the present disclosure may provide a system for preparing a crystal. The system may include a furnace, a heat insulation drum, a crucible component, a resistance heating component, and a heat insulation layer. The heat insulation drum may be located inside the furnace. The crucible component may be located inside the heat insulation drum. The resistance heating component may include a heating body. The heating body may include a plurality of heating units. The plurality of heating units may form a uniform temperature field. The heat insulation layer may be located around an outer side of the plurality of heating units, a top portion of the heat insulation drum, and/or a bottom portion of the crucible component.

Abstract: Embodiments of the present disclosure provide a crystal preparation device and a crystal preparation method. The crystal preparation device comprises a cavity configured to accommodate raw material; a laser heating assembly configured to heat the raw material; and a control assembly configured to adjust a heating parameter of the laser heating assembly in real-time during a crystal growth process.

Abstract: The present disclosure discloses a method for growing a crystal in oxygen atmosphere. The method may include compensating a weight of a reactant, introducing a flowing gas, improving a volume ratio of oxygen during a cooling process, providing a heater in a temperature field, and optimizing parameters. According to the method, problems may be solved, for example, cracking and component deviation of the crystal during a crystal growth process, and without oxygen-free vacancy. The method for growing the crystal may have excellent repeatability and crystal performance consistency.

Abstract: Embodiments of the present disclosure provide a heating system and a high-frequency power supply applied to the heating system. The heating system comprises a pot body configured to contain powder to be heated; a high-frequency power supply configured to supply an output signal with a power of not less than 5 kw and a frequency of not less than 1 MHz; and a resonant assembly configured to generate an electromagnetic field for directly heating the powder to be heated under driving of the output signal. The present disclosure provides a high-frequency signal to the resonant assembly through the high-frequency power supply, drives the resonant assembly to generate an electromagnetic field that directly acts on the powder, heats the powder while reducing the energy transmitted to the pot body, and avoids distortion or evaporation of the pot body due to heating, thereby realizing the heating of high-melting-point powder.

Abstract: Embodiments of the present disclosure provide a seed crystal holder and a crystal growth method. The seed crystal holder includes a seed crystal holder body and a connecting rod. The seed crystal holder body is fixed to one end of the connecting rod, and a seed crystal is provided on one side of the seed crystal holder body away from the connecting rod.

Abstract: Embodiments of the present disclosure provide crystal growth methods and devices. The crystal growth methods include placing a feedstock in a material zone of a growth chamber and placing a seed crystal in a growth zone of the growth chamber. The material zone and the growth zone are separated by a partition, and the partition includes at least one outlet. The crystal growth methods further include growing a crystal based on the seed crystal and the feedstock by a physical vapor transport (PVT) manner.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The present disclosure provides a method for crystal growth. The method may include at one of the following operations: weighing reactants for growing an oxide crystal after a first preprocessing operation is performed on the reactants; placing the reactants, on which a second preprocessing operation has been performed, into a crystal growth device after an assembly preprocessing operation is performed on at least one component of the crystal growth device, wherein the at least one component of the crystal growth device includes a crucible, the assembly preprocessing operation includes at least one of a coating operation, an acid soaking and cleaning operation, or an impurity cleaning operation; introducing a protective gas into the crystal growth device after sealing the crystal growth device; activating the crystal growth apparatus to execute the crystal growth; and adding reactant supplements into the crystal growth device in real-time during the crystal growth.

Abstract: The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

Abstract: One embodiment of the present disclosure provides a scintillation crystal and a method and a device for preparing the scintillation crystal. A molecular formula of the scintillation crystal is: Cey:Cas:Lu2(1-xysz)Y2zSc2xSiO5, wherein x=0-1, y=0.0000001-0.06, z=0.00001-0.5, s=0.0000001-0.05.

Abstract: A crystal preparation apparatus (100) and a crystal preparation method (700). The crystal preparation apparatus (100) comprises: a growth cavity (110), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); and a heating assembly (120), used for heating the growth cavity (110). The crystal preparation method (700) comprises: placing a raw material in the growth cavity (110) (710), the growth cavity (110) being internally provided with at least one layer of plate assembly (111); heating the growth cavity (110) by means of the heating assembly (120) so as to melt the raw material into a melt (720); bonding a seed crystal (180) to a seed crystal holder (150) (730); lowering the seed crystal holder (150) to which the seed crystal (180) is bonded, so that the seed crystal (180) is in contact with the melt; and preparing a crystal on the basis of the seed crystal (180) and the melt (750).

Abstract: Embodiments of the present description provide a connecting device. The device comprises a seed crystal support and a seed crystal rod, and the seed crystal support is connected to one end of the seed crystal rod.

Abstract: The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.

Abstract: The embodiments of the present disclosure disclose a method for controlling crystal growth. The method includes: obtaining an actual crystal parameter in a target time slice; obtaining a reference crystal parameter in the target time slice; determining a temperature control parameter based on the actual crystal parameter and the reference crystal parameter; determining a pulling control parameter based on the actual crystal parameter and the reference crystal parameter; and adjusting a temperature and a pulling speed in a next time slice after the target time slice respectively based on the temperature control parameter and the pulling control parameter.

Abstract: Embodiments of the present disclosure provide a sealing structure and a vacuum furnace. The sealing structure includes a baffle plate provided with a first through-hole, a first structural component provided with an internal hole for a component to be sealed to extend through, and a sealing assembly for sealing a gap between the baffle plate and the first structural component and a gap between the component to be sealed and the first structural component. The first through-hole extends through a first side surface and a second side surface of the baffle plate. The first structural component is connected to the baffle plate, at least a part of the internal hole is located within the first through-hole, and at least the part of the internal hole is not parallel to both the first side surface and the second side surface.

Abstract: The present disclosure provides a method for growing scintillation crystals with multi-component garnet structure. According to the method, through weight compensating for reactants, introducing a flowing gas, adopting a new temperature field device, and optimizing process parameters, problems such as component deviation and crystal cracking during the crystal growth can be solved to a certain extent, and grown crystals have consistent performance and good repeatability.

Abstract: The present disclosure relates to a method for growing a crystal. The method includes: weighing reactants according to a molar ratio of the reactants according to a reaction equation for generating the crystal after a first preprocessing operation is performed on the reactants, wherein the first preprocessing operation includes a roasting operation under 800° C.˜1400° C.; placing the reactants on which a second preprocessing operation has been performed into a crystal growth device, wherein the second preprocessing operation includes at least one of an ingredient mixing operation or a pressing operation at room temperature; introducing a flowing gas into the crystal growth device after sealing the crystal growth device; and activating the crystal growth device to execute a crystal growth to grow the crystal based on Czochralski technique.