Abstract: An electronical connector includes an insulation body and first and second conductive terminals. The insulation body includes a basal part, a middle part and a front end part defining a socketing space. The insulation body defines first and second terminal slots, with both communicating with the socketing space. The first terminal slot is positioned in the middle part and on an inner surface of a lower wall of the front end part. The second terminal slot is positioned in the middle part and on an inner surface of an upper wall of the front end part. The first and second conductive terminals are individually positioned in the first and second terminal slots. The first and second conductive terminals each include a contact part, a connection part, and a welding part. The contact part is positioned in the socketing space and the welding part protrudes out of the basal part.

Abstract: An electronical connector includes an insulation body and first and second conductive terminals. The insulation body includes a basal part, a middle part and a front end part defining a socketing space. The insulation body defines first and second terminal slots, with both communicating with the socketing space. The first terminal slot is positioned in the middle part and on an inner surface of a lower wall of the front end part. The second terminal slot is positioned in the middle part and on an inner surface of an upper wall of the front end part. The first and second conductive terminals are individually positioned in the first and second terminal slots. The first and second conductive terminals each include a contact part, a connection part, and a welding part. The contact part is positioned in the socketing space and the welding part protrudes out of the basal part.

Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

Abstract: Semiconductor devices and methods for manufacturing the same are disclosed. In one embodiment, the semiconductor device comprises a semiconductor substrate; an insulating layer located on the semiconductor substrate; a semiconductor body located on the insulating layer; a cavity formed in the semiconductor body and into the insulating layer; source/drain regions abutting opposite first side faces of the semiconductor body; gates located on opposite second side faces of the semiconductor body; a channel layer interposed between the respective second side faces and the cavity; and a super-steep-retrograded-well and a halo super-steep-retrograded-well formed in the channel layer. The super-steep-retrograded-well and the halo super-steep-retrograded-well have opposite dopant polarities.

Abstract: Semiconductor structures and methods for manufacturing the same are disclosed. The semiconductor structure comprises: a gate stack formed on a semiconductor substrate; a super-steep retrograde island embedded in said semiconductor substrate and self-aligned with said gate stack; and a counter doped region embedded in said super-steep retrograde island, wherein said counter doped region has a doping type opposite to a doping type of said super-steep retrograde island. The semiconductor structures and the methods for manufacturing the same facilitate alleviating short channel effects.