Abstract: Disclosed are a flip-chip light-emitting element and a light-emitting device. The flip-chip light-emitting element includes an epitaxial layer, a contact electrode, an insulating layer and a pad electrode. The epitaxial layer includes a first semiconductor layer, an active layer and a second semiconductor layer, and a contact electrode is formed on the surface of the epitaxial layer. An insulating layer is formed on the epitaxial layer, and covers the surface, the edge area and the sidewall of the epitaxial layer. A pad electrode is formed on the insulating layer and connected to the contact electrode, and the pad electrode at least covers part of the sidewall of the epitaxial layer. When the flip-chip light-emitting element of the present disclosure is solidified through solder paste, it is possible to prevent Sn and Ag from migrating and ascending into the active layer, thereby improving the reliability of the flip-chip light-emitting element.

Abstract: Embodiments of the present application provides a method for pre-charging a power conversion device and a power conversion device. The power conversion device is configured to perform power conversion between a charging pile and a traction battery, and the method includes: receiving, by the power conversion device, a first message sent by a battery management system of the traction battery, and the first message is configured to indicate that the battery management system is ready for charging; performing, by the power conversion device, a pre-charging, and the pre-charging includes: charging a capacitor in the power conversion device; and forwarding, by the power conversion device, the first message to the charging pile after the pre-charging is completed. The technical solution of the embodiments of the present application can ensure a normal charging process.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio 2 ? ? ? s s ? ? ? 2 ? ( ( s L ? 1 ) + L ? 1 ) s under a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion on a sidewall of the first mesa is less, and thus problems of light absorption and non-radiative recombination caused by a defect of the sidewall of a small-sized light-emitting diode are reduced during working at a low current. In addition, a non-planar light-emitting surface can improve a light-emitting probability of the sidewall of the light-emitting diode, and an external light-emitting efficiency of the light-emitting diode is further improved.

Abstract: A light-emitting device includes a semiconductor epitaxial unit, a first contact electrode, and a second contact electrode. The semiconductor epitaxial unit includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode and the second contact electrode are disposed on the semiconductor epitaxial unit, and are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. The first contact electrode includes an ohmic contact layer and a first electrode barrier layer. The second contact electrode includes an ohmic contact layer and a second electrode barrier layer. The ohmic contact layer of the first contact electrode includes a first ohmic contact layer. The ohmic contact layer of the second contact electrode includes a second ohmic contact layer. The second contact electrode further includes another first ohmic contact layer disposed between the second ohmic contact layer and the second electrode barrier layer.

Abstract: A light emitting diode and a light emitting device are provided. The light emitting diode includes: a semiconductor epitaxial stacked layer at least including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer and formed with a first mesa; a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer; a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; and a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode. Horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode.

Abstract: A semiconductor light-emitting element and a light-emitting device thereof are provided. The semiconductor light-emitting element includes a transparent substrate, a transparent bonding layer, and a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The transparent bonding layer is located between the transparent substrate and the semiconductor laminated layer. The transparent substrate has a first surface facing towards the semiconductor laminated layer, and the first surface has an uneven structure. The semiconductor laminated layer has a first surface facing towards the transparent substrate. The transparent bonding layer includes a first bonding layer in contact with the first surface of the transparent substrate, and a refractive index of the first bonding layer is lower than that of the transparent substrate.

Abstract: A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.

Abstract: A light-emitting diode (LED) chip includes a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer and a second semiconductor layer arranged from bottom to top, a transparent conductive layer disposed on the semiconductor laminated layer, a transparent bonding layer disposed on the transparent conductive layer, and a transparent substrate disposed on the transparent bonding layer. The second semiconductor layer includes a first sublayer and a second sublayer disposed on a part of an upper surface of the first sublayer, and a doping concentration of the first sublayer is lower than that of the second sublayer. The transparent conductive layer is in contact with an upper surface of the second sublayer and a part of the upper surface of the first sublayer around the second sublayer. The LED chip can improve the manufacturing yield and ensure the ohmic contact and uniform lateral current spreading.

Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.

Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.

Abstract: A light-emitting includes an epitaxial structure, a diffusion blocking layer, an ohmic contact layer, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, an active layer, and a second semiconductor layer disposed sequentially in such order. The diffusion blocking layer is disposed on a surface of the first semiconductor layer opposite to the active layer. The ohmic contact layer is disposed on a surface of the diffusion blocking layer opposite to the first semiconductor layer. The first electrode is disposed on a surface of the ohmic contact layer opposite to the diffusion blocking layer and is electrically connected to the first semiconductor layer. The second electrode is disposed on a surface of the second semiconductor layer adjacent to the active layer and is electrically connected to the second semiconductor layer. A method for manufacturing the light-emitting device is also provided.

Abstract: A light-emitting device includes a semiconductor substrate, an epitaxial structure that has a first surface facing the semiconductor substrate and a second surface opposite to the first surface, and a transparent bonding structure that is disposed between the first surface and the semiconductor substrate. The transparent bonding structure has a first bonding surface facing the first surface of the epitaxial structure and a second bonding surface opposite to the first bonding surface, and has a slit extending from the first bonding surface toward the second bonding surface and terminating at a position that is a distance away from the second bonding surface. A method for manufacturing a light-emitting device is also provided.

Abstract: A light-emitting device includes a semiconductor structure having a first semiconductor layer, an active layer, and a second semiconductor layer. The second semiconductor layer and the active layer formed on a top surface of the first semiconductor layer exposes a portion of the top surface. A first strip electrode is connected to the exposed top surface. A second strip electrode is connected to the second semiconductor layer. When first and second electrodes are projected on a plane, two parallel lines, that contact two opposite ends of the first electrode and perpendicularly intersect a straight line connecting between two opposite ends of the second electrode, define on the straight line a length, which does not extend beyond a distance between the two opposite ends of the second electrode.

Abstract: A flip-chip light emitting device includes a substrate, a light-emitting layer, a bonding layer disposed between the substrate and the light-emitting layer, and a protective insulating layer disposed over the light-emitting layer and the bonding layer. The bonding layer has first and second upper surfaces that respectively have different first and second roughnesses.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

Abstract: A flip-chip light emitting device includes a transparent substrate, an epitaxial light-emitting structure, a transparent bonding layer interposed between the transparent substrate and the light-emitting structure, and a protective insulating layer disposed over the light-emitting structure and the bonding layer. The transparent bonding layer has a smaller-thickness section that has a first contact surface for the protective insulating layer to be disposed thereover, and a larger-thickness section that has a second contact surface meshing with and bonded to a roughened bottom surface of the light-emitting structure. The first contact surface is smaller in roughness than the second contact surface. A method for producing the device is also disclosed.

Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1> 1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.

Abstract: A light-emitting diode (LED) includes an epitaxial laminated layer with an upper surface and an opposing lower surface, the LED including: a first-type semiconductor layer; an active layer; and a second-type semiconductor layer. A portion of the first-type semiconductor layer and the active layer are etched to expose a portion of the second-type semiconductor layer; a first electrode and a second electrode are disposed over the lower surface of the epitaxial laminated layer; the first electrode is disposed over a surface of the first-type semiconductor layer; the second electrode is disposed over a surface of the exposed second-type semiconductor layer; a transparent medium layer over the upper surface of the epitaxial laminated layer, having a refractive index n1>1.6; a transparent bonding medium layer over one upper surface of the transparent medium layer, having a refractive index n2<n1.