Abstract: Embodiments of the present disclosure belongs to the technical field of animal feed and provides a method for rapidly evaluating metabolizable energy of goose diet by using a technique of simulative digestion gross energy. By using the technical means combining the biological method and the simulative digestion gross energy technique, metabolizable energy of goose feed can be evaluated quickly. Based on the “stomach-small intestine” two-step enzymatic methods, it is the first time to establish a regression equation between the metabolizable energy change and fiber level in the cecum to rectify the value of simulative digestion gross energy in the cecal microbial digestion phase, making the simulative digestion gross energy technique more reasonable in the assessment of metabolizable energy in geese. Results show that the use of simulative digestion gross energy technique to assess the metabolizable energy of goose feed value is highly feasible.

Abstract: Embodiments of the present disclosure belongs to the technical field of animal feed and provides a method for rapidly evaluating metabolizable energy of goose diet by using a technique of simulative digestion gross energy. By using the technical means combining the biological method and the simulative digestion gross energy technique, metabolizable energy of goose feed can be evaluated quickly. Based on the “stomach-small intestine” two-step enzymatic methods, it is the first time to establish a regression equation between the metabolizable energy change and fiber level in the cecum to rectify the value of simulative digestion gross energy in the cecal microbial digestion phase, making the simulative digestion gross energy technique more reasonable in the assessment of metabolizable energy in geese. Results show that the use of simulative digestion gross energy technique to assess the metabolizable energy of goose feed value is highly feasible.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.

Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.