Abstract: Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

Abstract: The present disclosure discloses a quantum dot light-emitting diode and a preparation method therefor, wherein the quantum dot light-emitting diode comprises an anode, a cathode, and a quantum dot light-emitting layer disposed between the anode and the cathode, further includes a first modified layer disposed between the anode and the quantum dot light-emitting layer, comprising PAMAM having transition metal cation doped. The present disclosure, by disposing the first modified layer between the anode and the quantum dot light-emitting layer to modify the anode, is able to increase work function of anode, thereby improving hole injection effect and performance of a device. The present disclosure, by disposing a second modified layer between the cathode and the quantum dot light-emitting layer to modify the cathode and reduce the work function of the cathode, thereby improves electron injection effect and performance of the device.

Abstract: An embodiment of the present invention provides a display panel. The display panel includes a driving circuit layer, a first electrode layer, an auxiliary electrode layer, a pixel definition layer, and an electron transport layer disposed in a stack. The electron transport layer is connected to the auxiliary electrode layer through a first via hole defined on the pixel definition layer. By setting an energy level difference between a lowest unoccupied molecular orbital of the electron transport layer and a work function of the auxiliary electrode layer to 2.0 eV or less, it reduces an injection barrier between the auxiliary electrode layer and the electron transport layer, and relieves unevenness of luminescence of the display panel.

Abstract: A flexible organic light-emitting diode (OLED) substrate includes a flexible substrate, an inorganic barrier layer, an OLED device, and an adhesive-filling layer. The inorganic barrier layer is disposed on the flexible substrate. The OLED device is disposed on the inorganic barrier layer. The adhesive-filling layer covers the OLED device and the inorganic barrier layer. The flexible substrate further comprises a base substrate, a bending portion, and a covering portion. A thin film transistor layer is disposed on the base substrate, and the bending portion is connected to the base substrate and the covering portion. The covering portion covers the adhesive-filling layer and is stacked above the base substrate.

Abstract: The present application provides a flexible display panel including: an underlay substrate; at least one first conductive line being continuous line-shaped, disposed on the underlay substrate; at least one second conductive line being broken line-shaped, corresponding to the first conductive line, and disposed on the first conductive line, wherein each of the second conductive line includes a plurality of conductive line sections, the conductive line sections are spaced from one another, and is electrically connected to a corresponding one of the first conductive line. A rigidity of the first conductive line is less than a rigidity of the conductive line sections, and a conductivity of the conductive line sections is greater than a conductivity of the first conductive line. The configuration of the first conductive line and the second conductive line makes the flexible display panel have both rigidity and conductivity.

Abstract: An integrated light-emitting device and a fabricating method thereof. The integrated light-emitting device includes a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated; the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light; and the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit configured to emit light toward the first electrode along the second electrode.

Abstract: A manufacturing method of a display panel and a display panel are provided by the application. The manufacturing method of the display panel includes steps of providing a substrate; forming a thin film transistor layer, an anode layer, and a pixel definition layer on the anode layer on the substrate, wherein the pixel definition layer comprises a plurality of pixel definition regions; printing an ink-jet printing ink on the anode layer inside the pixel definition regions to form an ink-jet printing precursor layer; and printing a membrane surface improving solvent on the ink-jet printing precursor layer, wherein after the membrane surface improving solvent volatilizes, an ink-jet printing layer is formed.

Abstract: A display panel, an array substrate, an organic light-emitting diode (OLED) functional layer, a packaging layer, a filling layer, a protective layer, an edge packaging glue, and nanoparticles are provided. The nanoparticles are uniformly provided in the filling layer or the protective layer of the panel, and the nanoparticles can effectively increase the light diffusion effect, so the viewing angle of the display panel can be effectively improved.

Abstract: Disclosed is a preparation method for crosslinked nanoparticle film. The preparation method comprises: dispersing nanoparticles in a solvent and uniformly mixing same, so as to obtain a nanoparticle solution; and using the nanoparticle solution to prepare a nanoparticle thin film by means of a solution method, and introducing a gas combination to promote a crosslinking reaction, so as to obtain a crosslinked nanoparticle thin film. By introducing a gas combination during film formation of nanoparticles, the present disclosure promotes the crosslinking among particles, and thus increases the electrical coupling among particles, lowers the potential barrier of carrier transmission, and increases the carrier mobility, thereby greatly improving the electrical properties of the thin film.

Abstract: A quantum dot light-emitting diode and a method for fabricating the same. The quantum dot light-emitting diode, includes: an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material.

Abstract: A manufacturing method of a display panel and a display panel are provided by the application. The manufacturing method of the display panel includes steps of providing a substrate; forming a thin film transistor layer, an anode layer, and a pixel definition layer on the anode layer on the substrate, wherein the pixel definition layer comprises a plurality of pixel definition regions; printing an ink-jet printing ink on the anode layer inside the pixel definition regions to form an ink-jet printing precursor layer; and printing a membrane surface improving solvent on the ink-jet printing precursor layer, wherein after the membrane surface improving solvent volatilizes, an ink-jet printing layer is formed.

Abstract: A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.

Abstract: The present application discloses a first aspect provides a quantum dot light-emitting diode, including: a cathode and an anode which are oppositely arranged; a quantum dot light-emitting layer arranged between the cathode and the anode; and a stacked layer arranged between the cathode and the quantum dot light-emitting layer. A stacked layer includes: a first metal oxide nanoparticle layer, and a mixed material layer arranged on a surface of the first metal oxide nanoparticle layer far away from the quantum dot light-emitting layer. The mixed material layer includes: first metal oxide nanoparticles, and a second metal oxide dispersed among gaps of the first metal oxide nanoparticles. First metal oxide nanoparticles in the first metal oxide nanoparticle layer serve as an electron transport material. A content of the second metal oxide in the mixed material layer gradually increases in a direction from the quantum dot light-emitting layer to the cathode.

Abstract: A quantum dot light-emitting diode and a method for fabricating the same. The quantum dot light-emitting diode, includes: an anode, a cathode, and a quantum dot light-emitting layer arranged between the anode and the cathode. A composite electron transport layer is arranged between the cathode and the quantum dot light-emitting layer, and the composite electron transport layer contains an electron transport material and an ultraviolet absorbing material.

Abstract: The present application provides a Quantum Dot Light Emitting Diode (QDLED), comprising an anode, a p-type graphene layer, a hole injection layer, a quantum dot light-emitting layer and a cathode, the anode and the cathode is oppositely disposed, the quantum dot light-emitting layer is disposed between the anode and the cathode, the p-type graphene layer is disposed between the anode and the quantum dot light-emitting layer, and the hole transport layer is disposed between the p-type graphene layer and the quantum dot light-emitting layer, wherein the p-type graphene layer is made from p-type doped graphene, and the p-type doped graphene is at least one selected from a doped graphene via adsorption and a doped graphene via lattice.

Abstract: An embodiment of the present invention provides a display panel. The display panel includes a driving circuit layer, a first electrode layer, an auxiliary electrode layer, a pixel definition layer, and an electron transport layer disposed in a stack. The electron transport layer is connected to the auxiliary electrode layer through a first via hole defined on the pixel definition layer. By setting an energy level difference between a lowest unoccupied molecular orbital of the electron transport layer and a work function of the auxiliary electrode layer to 2.0 eV or less, it reduces an injection barrier between the auxiliary electrode layer and the electron transport layer, and relieves unevenness of luminescence of the display panel.

Abstract: An integrated light-emitting device and a fabricating method thereof. The integrated light-emitting device includes a first electrode, an insulating layer, a second electrode, a light-emitting layer, and a third electrode which are sequentially laminated; the first electrode, the insulating layer, the second electrode, and the third electrode together constitute a field effect transistor unit, and the first electrode, the second electrode and the third electrode are respectively a gate, a source and a drain of the field effect transistor unit, and a surface of the insulating layer adjacent to the second electrode is provided with a nano-pit array structure configured for condensing light; and the second electrode, the light-emitting layer and the third electrode together constitute a light-emitting unit, the light-emitting unit configured to emit light toward the first electrode along the second electrode.

Abstract: Disclosed in the present disclosure is a preconfigured reverse drive method applied in a video displaying process. The method comprises the steps of: pre-obtaining display content of several frames behind lit pixels in a video by means of content loading; and adding a reverse drive signal before each forward drive signal used for driving the display content of the several frames, to suppress electric charge concentration on pixel in a video display panel in advance. The reverse drive signal changes the potential barrier of the detect potential well, removes electric charges confined and concentrated in the potential well, and reduces the density of confined electric charges. Thus, the video display brightness is improved, and the service life of the video display panel is prolonged.

Abstract: The present disclosure discloses a quantum dot light-emitting diode and a preparation method therefor, wherein the quantum dot light-emitting diode comprises an anode, a cathode, and a quantum dot light-emitting layer disposed between the anode and the cathode, further includes a first modified layer disposed between the anode and the quantum dot light-emitting layer, comprising PAMAM having transition metal cation doped. The present disclosure, by disposing the first modified layer between the anode and the quantum dot light-emitting layer to modify the anode, is able to increase work function of anode, thereby improving hole injection effect and performance of a device. The present disclosure, by disposing a second modified layer between the cathode and the quantum dot light-emitting layer to modify the cathode and reduce the work function of the cathode, thereby improves electron injection effect and performance of the device.

Abstract: A preparation method of the QD light-emitting diode includes: prepare a QD light-emitting layer on an anode, wherein the QD light-emitting layer is prepared by the QDs and the CuSCN nanoparticles; and prepare a cathode on the QD light-emitting layer, and form the QD light-emitting diode.