Patents by Inventor Weitian KOU
Weitian KOU has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11782349Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: January 24, 2023Date of Patent: October 10, 2023Assignee: ASML NETHERLANDS B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20230168594Abstract: A method of determining a position of a product feature on a substrate, the method includes: obtaining a plurality of position measurements of one or more product features on a substrate, wherein the measurements are referenced to either a positioning system used in displacing the substrate in between measurements or a plane parallel to the surface of the substrate; and determining a distortion component of the substrate based on the position measurements.Type: ApplicationFiled: May 11, 2021Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Wim Tjibbo TEL, Hermanus Adrianus DILLEN, Marc Jurian KEA, Roy WERKMAN, Weitian KOU
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Publication number: 20230168591Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: January 24, 2023Publication date: June 1, 2023Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erick Johannes Maria Wallerbos, Erick Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Patent number: 11592753Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: April 7, 2022Date of Patent: February 28, 2023Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20220365446Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.Type: ApplicationFiled: July 27, 2022Publication date: November 17, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Manouk RIJPSTRA, Cornelis Johannes Henricus LAMBREGTS, Wim Tjibbo TEL, Sarathi ROY, Cédric Désiré GROUWSTRA, Chi-Fei NIEN, Weitian KOU, Chang-Wei CHEN, Pieter Gerardus Jacobus SMORENBERG
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Patent number: 11448973Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.Type: GrantFiled: November 20, 2018Date of Patent: September 20, 2022Assignee: ASML Netherlands B.V.Inventors: Manouk Rijpstra, Cornelis Johannes Henricus Lambregts, Wim Tjibbo Tel, Sarathi Roy, Cédric Désiré Grouwstra, Chi-Fei Nien, Weitian Kou, Chang-Wei Chen, Pieter Gerardus Jacobus Smorenberg
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 11327407Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: November 24, 2020Date of Patent: May 10, 2022Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20210349402Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: ApplicationFiled: July 21, 2021Publication date: November 11, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Everhardus Cornelis Mos, Weitian Kou, Alexander Ypma, Michiel Kupers, Hyunwoo Yu, Min-Sub Han
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Patent number: 11099487Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates. As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: GrantFiled: March 28, 2018Date of Patent: August 24, 2021Assignee: ASML Netherlands BVInventors: Marc Hauptmann, Everhardus Cornelis Mos, Weitian Kou, Alexander Ypma, Michiel Kupers, Hyunwoo Yu, Min-Sub Han
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Patent number: 11054813Abstract: In a lithographic process in which a series of substrates are processed in different contexts, object data (such as performance data representing overlay measured on a set of substrates that have been processed previously) is received. Context data represents one or more parameters of the lithographic process that vary between substrates within the set. By principal component analysis or other statistical analysis of the performance data, the set of substrates are partitioned into two or more subsets. The first partitioning of the substrates and the context data are used to identify one or more relevant context parameters, being parameters of the lithographic process that are observed to correlate most strongly with the first partitioning. The lithographic apparatus is controlled for new substrates by reference to the identified relevant context parameters. Embodiments with feedback control and feedforward control are described.Type: GrantFiled: September 21, 2016Date of Patent: July 6, 2021Assignee: ASML Netherlands B.V.Inventors: Alexander Ypma, David Frans Simon Deckers, Franciscus Godefridus Casper Bijnen, Richard Johannes Franciscus Van Haren, Weitian Kou
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Patent number: 11029610Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: GrantFiled: September 4, 2018Date of Patent: June 8, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Ahmet Koray Erdamar, Loek Johannes Petrus Verhees, Willem Seine Christian Roelofs, Wendy Johanna Martina Van De Ven, Hadi Yagubizade, Hakki Ergün Cekli, Ralph Brinkhof, Tran Thanh Thuy Vu, Maikel Robert Goosen, Maaike Van T Westeinde, Weitian Kou, Manouk Rijpstra, Matthijs Cox, Franciscus Godefridus Casper Bijnen
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Patent number: 10962887Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method including: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: GrantFiled: November 18, 2019Date of Patent: March 30, 2021Assignee: ASML Netherlands B.V.Inventors: Patricius Aloysius Jacobus Tinnemans, Edo Maria Hulsebos, Henricus Johannes Lambertus Megens, Sudharshanan Raghunathan, Boris Menchtchikov, Ahmet Koray Erdamar, Loek Johannes Petrus Verhees, Willem Seine Christian Roelofs, Wendy Johanna Martina Van De Ven, Hadi Yagubizade, Hakki Ergün Cekli, Ralph Brinkhof, Tran Thanh Thuy Vu, Maikel Robert Goosen, Maaike Van't Westeinde, Weitian Kou, Manouk Rijpstra, Matthijs Cox, Franciscus Godefridus Casper Bijnen
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Publication number: 20210080837Abstract: A method for determining a correction to a patterning process. The method includes obtaining a plurality of qualities of the patterning process (e.g., a plurality of parameter maps, or one or more corrections) derived from metrology data and data of an apparatus used in the patterning process, selecting, by a hardware computer system, a representative quality from the plurality of qualities, and determining, by the hardware computer system, a correction to the patterning process based on the representative quality.Type: ApplicationFiled: November 20, 2018Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Manouk RIJPSTRA, Cornelis Johannes Henricus LAMBREGTS, Wim Tjibbo TEL, Sarathi ROY, Cédric Désiré GROUWSTRA, Chi-Fei NIEN, Weitian KOU, Chang-Wei CHEN, Pieter Gerardus Jacobus SMORENBERG
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Publication number: 20210080836Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: November 24, 2020Publication date: March 18, 2021Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Patent number: 10877381Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: GrantFiled: September 28, 2017Date of Patent: December 29, 2020Assignee: ASML Netherlands B.V.Inventors: Weitian Kou, Alexander Ypma, Marc Hauptmann, Michiel Kupers, Lydia Marianna Vergaij-Huizer, Erik Johannes Maria Wallerbos, Erik Henri Adriaan Delvigne, Willem Seine Christian Roelofs, Hakki Ergün Cekli, Stefan Cornelis Theodorus Van Der Sanden, Cédric Désiré Grouwstra, David Frans Simon Deckers, Manuel Giollo, Iryna Dovbush
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Publication number: 20200272061Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate. The method includes: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: ApplicationFiled: September 4, 2018Publication date: August 27, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Edo Maria HULSEBOS, Henricus Johannes Lambertus MEGENS, Ahmet Koray ERDAMAR, Loek Johannes Petrus VERHEES, Willem Seine Christian ROELOFS, Wendy Johanna Martina VAN DE VEN, Hadi YAGUBIZADE, Hakki Ergün CEKLI, Ralph BRINKHOF, Tran Thanh Thuy VU, Maikel Robert GOOSEN, Maaike VAN T WESTEINDE, Weitian KOU, Manouk RIJPSTRA, Matthijs COX, Franciscus Godefridus Casper BIJNEN
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Publication number: 20200081356Abstract: A method for determining one or more optimized values of an operational parameter of a sensor system configured for measuring a property of a substrate is disclosed the method comprising: determining a quality parameter for a plurality of substrates; determining measurement parameters for the plurality of substrates obtained using the sensor system for a plurality of values of the operational parameter; comparing a substrate to substrate variation of the quality parameter and a substrate to substrate variation of a mapping of the measurement parameters; and determining the one or more optimized values of the operational parameter based on the comparing.Type: ApplicationFiled: November 18, 2019Publication date: March 12, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Patricius Aloysius Jacobus TINNEMANS, Edo Maria HULSEBOS, Henricus Johannes Lambertus MEGENS, Sudharshanan RAGHUNATHAN, Boris MENCHTCHIKOV, Ahmet Koray ERDAMAR, Loek Johannes Petrus VERHEES, Willem Seine Christian ROELOFS, Wendy Johanna Martina VAN DE VEN, Hadi YAGUBIZADE, Hakki Ergün CEKLI, Ralph BRINKHOF, Tran Thanh Thuy VU, Maikel Robert GOOSEN, Maaike VAN'T WESTEINDE, Weitian KOU, Manouk RIJPSTRA, Matthijs COX, Franciscus Godefridus Casper BIJNEN
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Publication number: 20200050180Abstract: A lithographic process is performed on a plurality of semiconductor substrates. The method includes selecting one or more of the substrates as one or more sample substrates. Metrology steps are performed only on the selected one or more sample substrates. Based on metrology results of the selected one or more sample substrates, corrections are defined for use in controlling processing of the substrates or of future substrates. The selection of the one or more sample substrates is based at least partly on statistical analysis of object data measured in relation to the substrates. The same object data or other data can be used for grouping substrates into groups. Selecting of one or more sample substrates can include selecting substrates that are identified by the statistical analysis as most representative of the substrates in their group and/or include elimination of one or more substrates that are identified as unrepresentative.Type: ApplicationFiled: September 21, 2017Publication date: February 13, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Min-Sub HAN
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Publication number: 20200026201Abstract: A lithographic process is performed on a set of semiconductor substrates consisting of a plurality of substrates, As part of the process, the set of substrates is partitioned into a number of subsets. The partitioning may be based on a set of characteristics associated with a first layer on the substrates. A fingerprint of a performance parameter is then determined for at least one substrate of the set of substrates. Under some circumstances, the fingerprint is determined for one substrate of each subset of substrates. The fingerprint is associated with at least the first layer. A correction for the performance parameter associated with an application of a subsequent layer is then derived, the derivation being based on the determined fingerprint and the partitioning of the set of substrates.Type: ApplicationFiled: March 28, 2018Publication date: January 23, 2020Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Everhardus Cornelis MOS, Weitian KOU, Alexander YPMA, Michiel KUPERS, Hyunwoo YU, Min-Sub HAN