Patents by Inventor Weiwei SONG
Weiwei SONG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250237817Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.Type: ApplicationFiled: April 8, 2025Publication date: July 24, 2025Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chan-Hong Chern, Chih-Chang Lin, Chewn-Pu Jou, Chih-Tsung Shih, Feng-Wei Kuo, Lan-Chou Cho, Min-Hsiang Hsu, Weiwei Song
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Patent number: 12298565Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.Type: GrantFiled: June 8, 2023Date of Patent: May 13, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chan-Hong Chern, Chih-Chang Lin, Chewn-Pu Jou, Chih-Tsung Shih, Feng-Wei Kuo, Lan-Chou Cho, Min-Hsiang Hsu, Weiwei Song
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Patent number: 12282195Abstract: A method of using an integrated circuit includes monitoring a current between a first photodetector (PD) and an electronic circuit. The method further includes determining whether the monitored current is abnormal. The method further includes controlling a resonant structure to optically couple a first waveguide connected to the first PD to a second waveguide connected to a second PD, different from the first PD, in response to a determination that the monitored current is abnormal.Type: GrantFiled: November 14, 2023Date of Patent: April 22, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Weiwei Song, Stefan Rusu
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Patent number: 12276836Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.Type: GrantFiled: December 9, 2022Date of Patent: April 15, 2025Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chan-Hong Chern, Chih-Chang Lin, Min-Hsiang Hsu, Weiwei Song, Chewn-Pu Jou, Feng-Wei Kuo, Huan-Neng Chen, Lan-Chou Cho
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Patent number: 12270897Abstract: Disclosed is a time series InSAR tropospheric delay correction method for relieving atmospheric seasonal oscillation, so as to relieve the seasonal oscillation deviation caused by tropospheric delay. This method is based on the temporal and spatial characteristics of atmospheric delay. Firstly, based on the ERA-5 atmospheric grid data covering the study area, the ZTD negative exponential vertical profile function model is established. Fourier series function is introduced to establish the time series model for ? and ZTDr, Finally, according to the radar incidence angle parameters, the delay is changed from zenith direction to radar line of sight direction.Type: GrantFiled: August 5, 2024Date of Patent: April 8, 2025Assignee: KUNMING UNIVERSITY OF SCIENCE AND TECHNOLOGYInventors: Xiaoqing Zuo, Shipeng Guo, Weiwei Song, Yongfa Li, Jihong Zhang, Daming Zhu, Cheng Huang, Zhuohui Xiao, Menghua Li, Sumin Li, Qingwang Wang
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Patent number: 12265258Abstract: Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.Type: GrantFiled: August 9, 2023Date of Patent: April 1, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Weiwei Song, Stefan Rusu, Mohammed Rabiul Islam
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Patent number: 12253745Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.Type: GrantFiled: August 1, 2023Date of Patent: March 18, 2025Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Weiwei Song, Stefan Rusu, Chan-Hong Chern, Chih-Chang Lin
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Patent number: 12228768Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.Type: GrantFiled: December 8, 2022Date of Patent: February 18, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Weiwei Song, Chan-Hong Chern, Chih-Chang Lin, Stefan Rusu, Min-Hsiang Hsu
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Publication number: 20250056915Abstract: The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.Type: ApplicationFiled: October 28, 2024Publication date: February 13, 2025Inventors: CHAN-HONG CHERN, WEIWEI SONG, CHIH-CHANG LIN, LAN-CHOU CHO, MIN-HSIANG HSU
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Publication number: 20240393537Abstract: A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.Type: ApplicationFiled: July 30, 2024Publication date: November 28, 2024Inventors: Weiwei Song, Stefan Rusu, Chewn-Pu Jou, Huan-Neng Chen
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Patent number: 12154996Abstract: The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.Type: GrantFiled: July 21, 2023Date of Patent: November 26, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Chan-Hong Chern, Weiwei Song, Chih-Chang Lin, Lan-Chou Cho, Min-Hsiang Hsu
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Publication number: 20240377586Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.Type: ApplicationFiled: July 24, 2024Publication date: November 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Weiwei Song, Chan-Hong CHERN, Chih-Chang LIN, Stefan RUSU, Min-Hsiang HSU
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Patent number: 12140800Abstract: A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.Type: GrantFiled: June 24, 2022Date of Patent: November 12, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Weiwei Song, Stefan Rusu, Chewn-Pu Jou, Huan-Neng Chen
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Publication number: 20240369761Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.Type: ApplicationFiled: July 12, 2024Publication date: November 7, 2024Inventors: Mohammed Rabiul Islam, Stefan Rusu, Weiwei Song
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Patent number: 12121880Abstract: A catalyst component for olefin polymerization includes magnesium, titanium, a halogen, an internal electron donor compound, and a precipitation aid. The precipitation aid includes a precipitation aid represented by general formula (I). The precipitation aid represented by general formula (I) includes isomers represented by general formula (I-a) and/or (I-b).Type: GrantFiled: May 21, 2019Date of Patent: October 22, 2024Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, BEIJING RESEARCH INSTITUTE OF CHEMICAL INDUSTRY, CHINA PETROLEUM & CHEMICAL CORPORATIONInventors: Rui Zhang, Zhong Tan, Qilong Zhou, Xiudong Xu, Fengkui Li, Shanshan Yin, Jinhua Yu, Weiwei Song
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Publication number: 20240333415Abstract: An optical device includes a first waveguide, ring-shaped waveguides adjacent to the first waveguide, and heaters coupled to the ring-shaped waveguides in one-to-one correspondence. A method includes coupling a first light source with a first wavelength to the first waveguide, increasing electric current through the heaters until a first one of the ring-shaped waveguides resonates, assigning the first one of the ring-shaped waveguides to the first wavelength, resetting the electric current through the heaters to the initial electric current, coupling a second light source with a second wavelength to the first waveguide wherein the second wavelength is different from the first wavelength, increasing the electric current through the heaters until a second one of the ring-shaped waveguides resonates wherein the second one of the ring-shaped waveguides is different from the first one of the ring-shaped waveguides, and assigning the second one of the ring-shaped waveguides to the second wavelength.Type: ApplicationFiled: June 10, 2024Publication date: October 3, 2024Inventors: Chih-Chang Lin, Chan-Hong Chern, Stefan Rusu, Weiwei Song, Lan-Chou Cho
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Patent number: 12092862Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.Type: GrantFiled: June 1, 2023Date of Patent: September 17, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Mohammed Rabiul Islam, Stefan Rusu, Weiwei Song
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Patent number: D1034892Type: GrantFiled: April 24, 2024Date of Patent: July 9, 2024Inventors: Jiecong Chen, Weiwei Song, Zhichao Mi
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Patent number: D1067271Type: GrantFiled: December 11, 2024Date of Patent: March 18, 2025Inventor: Weiwei Song
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Patent number: D1069033Type: GrantFiled: November 28, 2024Date of Patent: April 1, 2025Inventor: Weiwei Song