Abstract: The present disclosure relates to a method for efficiently enriching lutein in broccoli sprouts under ?-aminobutyric acid combined with sodium chloride stress. In the present disclosure, Qingfeng broccoli seeds with plump particles, uniform size and germination ability are selected as raw materials; after removing impurities and being disinfected by a NaClO solution, the seeds are sprayed with distilled water for one day, then sprayed with a mixed aqueous solution of NaCl and ?-aminobutyric acid, to obtain broccoli sprouts.

Abstract: An ambient pressure compensation structure for an ultraviolet difference spectrum gas sensor includes a closed box, an ultraviolet difference spectrum gas sensor, a digital pressure sensor, a thermostatic controller, an industrial control computer, a pressure regulating assembly and a limiting partition; the pressure regulating assembly and the limiting partition are arranged inside the closed box, the pressure regulating assembly comprises a piston, a regulating rod and a driving motor, the left side of the piston is connected with the regulating rod, the front end of the regulating rod penetrates out of the closed box and is connected with the driving motor, and the piston divides the interior of the closed box into a pressure regulating air chamber and a working air chamber. Also disclosed is an ambient pressure compensation method for an ultraviolet difference spectrum gas sensor.

Abstract: A method of using an integrated circuit includes monitoring a current between a first photodetector (PD) and an electronic circuit. The method further includes determining whether the monitored current is abnormal. The method further includes controlling a resonant structure to optically couple a first waveguide connected to the first PD to a second waveguide connected to a second PD, different from the first PD, in response to a determination that the monitored current is abnormal.

Abstract: Photonic device, system and methods of making photonic devices and systems, the method including: providing a substrate, forming an insulator layer over the substrate, depositing a plurality of waveguide layers and a plurality of insulator spacers at different vertical levels over the insulator layer, wherein adjacent waveguide layers in the plurality of waveguide layers are isolated by one or more insulator spacers in the plurality of insulator spacers, and forming a plurality of waveguide patterns at the plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the plurality of waveguide patterns are coupled.

Abstract: An optical system with different optical coupling device configurations and a method of fabricating the same are disclosed. An optical system includes a substrate, a waveguide disposed on the substrate, an optical fiber optically coupled to the waveguide, and an optical coupling device disposed between the optical fiber and the waveguide. The optical coupling device configured to optically couple the optical fiber to the waveguide. The optical coupling device includes a dielectric layer disposed on the substrate, a semiconductor tapered structure disposed in a first horizontal plane within the dielectric layer, and a multi-tip dielectric structure disposed in a second horizontal plane within the dielectric layer. The first and second horizontal planes are different from each other.

Abstract: A semiconductor device includes an oxide layer having a first side and a second side opposite to each other. The semiconductor device includes a plurality of first waveguides that are disposed across a plurality of first insulator layers, respectively, on the first side of the oxide layer. The semiconductor device includes a plurality of second waveguides that are disposed across a plurality of second insulator layers, respectively, on the second side of the oxide layer. The plurality of first waveguides and the plurality of second waveguides collectively form a plurality of photonic neural network layers of an artificial neural network.

Abstract: Photonic device, system and methods of making photonic devices and systems, the method including: providing a substrate, forming an insulator layer over the substrate, depositing a plurality of waveguide layers and a plurality of insulator spacers at different vertical levels over the insulator layer, wherein adjacent waveguide layers in the plurality of waveguide layers are isolated by one or more insulator spacers in the plurality of insulator spacers, and forming a plurality of waveguide patterns at the plurality of waveguide layers, wherein at least two waveguide patterns at different vertical levels in the plurality of waveguide patterns are coupled.

Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.

Abstract: Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an insulator layer arranged over a substrate. Further, an upper routing structure is arranged over the insulator layer and is made of a semiconductor material. A lower optical routing structure is arranged below the substrate and is embedded in a lower dielectric structure. The integrated chip further includes an anti-reflective layer that is arranged below the substrate and directly contacts the substrate.

Abstract: The present disclosure provides a photo sensing device and a method for forming a photo sensing device. The photo sensing device includes a substrate, a photosensitive member, a superlattice layer and a diffusion barrier structure. The substrate includes a silicon layer at a front surface. The photosensitive member extends into and at least partially surrounded by the silicon layer, wherein an upper portion of the photosensitive member protruding from the silicon layer has a top surface and a facet tapering toward the top surface. The superlattice layer is disposed between the photosensitive member and the silicon layer. The diffusion barrier structure is disposed at a first side of the photosensitive member and a bottom of the diffusion barrier structure is at a level below a top surface of the silicon layer, wherein at least a portion of the diffusion barrier structure is laterally surrounded by the silicon layer.

Abstract: An integrated circuit includes an electronic circuit. The integrated circuit further includes a photonic device. The photonic device includes a first photodetector (PD) electrically connected to the electronic circuit. The photonic device further includes a second PD electrically connected to the electronic circuit. The photonic device further includes a first waveguide configured to receive an optical signal input, wherein the first waveguide is optically connected to the first PD. The photonic device further includes a second waveguide optically connected to the second PD. The photonic device further includes a resonant structure between the first waveguide and the second waveguide, wherein the resonant structure is configured to optically couple the first waveguide to the second waveguide.

Abstract: A fusion gene, a recombinant novel coronavirus high-efficiency immune DNA vaccine, a construction method and use thereof are provided. The immune DNA vaccine ZD-nCor19 provided herein uses RBD protein, residues 301-538 in the S2 subunit and residues 138-369 in the N protein of the novel coronavirus as target antigens, and has specific immune synergism molecules introduced at suitable positions, and thus can simultaneously efficiently induce humoral immunity and cellular immunity, and can avoid safety problems associated with ADE that may be generated by the full-length S protein and the full-length N protein, thereby achieving dual effects of prevention and treatment. The vaccine can be used as a safe, efficient and stable vaccine variety against novel coronavirus infection.

Abstract: Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.

Abstract: An optical device for coupling light propagating between a waveguide and an optical transmission component is provided. The optical device includes a taper portion and a grating portion. The taper portion is disposed between the grating portion and the waveguide. The grating portion includes rows of grating patterns. A first size of a first grating pattern in a first row of grating patterns is larger than a second size of a second grating pattern in a second row of grating patterns. A first distance between the first row of grating patterns and the waveguide is less than a second distance between the second row of grating patterns and the waveguide.

Abstract: An optical device includes a first waveguide, ring-shaped waveguides adjacent to the first waveguide, and heaters coupled to the ring-shaped waveguides in one-to-one correspondence. A method includes coupling a first light source with a first wavelength to the first waveguide, increasing electric current through the heaters until a first one of the ring-shaped waveguides resonates, assigning the first one of the ring-shaped waveguides to the first wavelength, resetting the electric current through the heaters to the initial electric current, coupling a second light source with a second wavelength to the first waveguide wherein the second wavelength is different from the first wavelength, increasing the electric current through the heaters until a second one of the ring-shaped waveguides resonates wherein the second one of the ring-shaped waveguides is different from the first one of the ring-shaped waveguides, and assigning the second one of the ring-shaped waveguides to the second wavelength.

Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.

Abstract: The present disclosure provides a photo sensing device, the photo sensing device includes a substrate, including a silicon layer at a front surface, a photosensitive member extending into and at least partially surrounded by the silicon layer, a first doped region having a first conductivity type at a first side of the photosensitive member, wherein the first doped region is in the silicon layer, and a second doped region having a second conductivity type different from the first conductivity type at a second side of the photosensitive member opposite to the first side, wherein the second doped region is in the silicon layer, and the first doped region is apart from the second doped region, and a superlattice layer disposed between the photosensitive member and the silicon layer, wherein the superlattice layer includes a first material and a second material different from the first material.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes an insulator layer arranged over a substrate. Further, an upper routing structure is arranged over the insulator layer and is made of a semiconductor material. A lower optical routing structure is arranged below the substrate and is embedded in a lower dielectric structure. The integrated chip further includes an anti-reflective layer that is arranged below the substrate and directly contacts the substrate.