Abstract: The present invention relates to a carbide tool cleaning and coating production line and a method, including a cleaning device including a support frame, a cleaning mechanism and a drying mechanism are sequentially disposed under the support frame connected to a moving mechanism, the moving mechanism is connected to a lifting mechanism being capable of being connected to a tool fixture bracket being configured to accommodate the tool fixture; a coating device including a coating chamber which a plane target mechanism and a turntable assembly disposed in, the turntable assembly is capable of being connected to a plurality of tool fixtures being capable of rotating around an axial line of the coating chamber under the driving of the turntable assembly and rotating around an axial line thereof at the same time; and, a manipulator being disposed between the cleaning device and the coating device.

Abstract: A multi-procedure integrated automatic production line for hard alloy blades under robot control is provided. The production line includes a rail-guided robot. A cutter passivation device and a blade cleaning and drying device are arranged on one side of the rail-guided robot. A blade-coating transfer table, a blade coating device, a blade boxing transfer table, a blade-tooling dismounting device and a blade boxing device are sequentially arranged on another side of the rail-guided robot. The blade-tooling dismounting device is arranged on one side of the blade boxing transfer table. The production line further includes squirrel-cage toolings for carrying the blades. The squirrel-cage tooling that are loaded with the blades can run among the cutter passivation device, the blade cleaning and drying device, the blade-coating transfer table and the blade boxing transfer table. The blades after being treated through the blade-tooling dismounting device are sent to the blade boxing device.

Abstract: A communication method includes that a sharing AP selects a first beam width used to schedule a sharing STA during coordinated transmission, and the sharing AP sends a coordinated transmission notification to a shared AP, where the coordinated transmission notification includes a coordinated transmission parameter, where the coordinated transmission parameter is obtained based on the sharing STA and the first beam width, where the coordinated transmission notification indicates the shared AP to select, based on the coordinated transmission parameter, a shared STA and a second beam width that are used for coordinated transmission, where the second beam width is one of adjustable beam widths of the shared AP, and where the first beam width is one of at least two adjustable beam widths of the sharing AP.

Abstract: A resource allocation method, a device, and a storage medium are disclosed. The method includes: A network device obtains a packet concurrency status of a plurality of wireless local area network WLAN devices, where the plurality of WLAN devices correspond to a same channel. The network device allocates channel resource slices to the plurality of WLAN devices from a channel resource in a first time period based on the packet concurrency status.

Abstract: A method and an apparatus for detecting co-channel interference in a WLAN are provided. The method provided herein includes: A communication device detects a first energy value and a second energy value, where the first energy value is an energy value of a signal on a channel before a WLAN frame is sent, and the second energy value is an energy value of a signal on the channel after the WLAN frame is sent. The communication device determines, based on the first energy value and the second energy value, that the WLAN frame is subject to interference.

Abstract: An interference information detection method and a related apparatus are disclosed. The method includes: A server collects information about the plurality of frames from the plurality of stations, where information about some of the plurality of frames includes sending time, contention time, and frame duration, and the contention time indicates time at which a corresponding frame starts to wait to be sent or duration in which the corresponding frame waits to be sent; and the server determines the interference information about the plurality of stations based on the information about the plurality of frames.

Abstract: A method for replying with an acknowledgement frame includes: calculating, by an access point (AP), sending duration of a physical layer service data unit (PSDU) in a to-be-sent downlink physical layer protocol data unit (downlink PPDU) based on a format and a sending rate that are of the downlink PPDU and based on only that a length of each block acknowledgement bitmap field in a block acknowledgement frame in the downlink PPDU is a maximum quantity of bytes that is of each respective block acknowledgement bitmap field of the plurality of stations (STAs), to generate an legacy signal field of a second preamble; and generating, by the AP, the block acknowledgement frame, where each STA information subfield in a block acknowledgement information field of the block acknowledgement frame includes an association identifier traffic identifier field, a block acknowledgement starting sequence control field, and a block acknowledgement bitmap field.

Abstract: A virtual network comprising virtual machines executing at a computing environment is implemented. A flexibly extensible NIC (eNIC) is executed at a software defined networking (SDN) appliance. A data packet is received that is addressed to a host that is connected to the virtual network. Based on a layer 2 address and a network identifier, the virtual switch identifies the host represented by the eNIC that is associated with the data packet. A policy associated with the host is determined and applied to the data packet. The policy is dynamically adjustable based on the host.

Abstract: A method for replying with an acknowledgement frame includes: calculating, by an access point (AP), sending duration of a physical layer service data unit (PSDU) in a to-be-sent downlink physical layer protocol data unit (downlink PPDU) based on a format and a sending rate that are of the downlink PPDU and based on only that a length of each block acknowledgement bitmap field in a block acknowledgement frame in the downlink PPDU is a maximum quantity of bytes that is of each respective block acknowledgement bitmap field of the plurality of stations (STAs), to generate an legacy signal field of a second preamble; and generating, by the AP, the block acknowledgement frame, where each STA information subfield in a block acknowledgement information field of the block acknowledgement frame includes an association identifier traffic identifier field, a block acknowledgement starting sequence control field, and a block acknowledgement bitmap field.

Abstract: A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for bonding, which also acts as ohmic contact layer in the laser when the laser is electrically pumped. A compound semiconductor optical gain structure is prepared by epitaxial growth and etched off the substrate. The compound semiconductor optical gain structure is aligned with the Si waveguide area in the SOI wafer and the compound semiconductor optical gain structure is bonded on the SOI wafer. The selective area metal bonding Si-based laser can be used as a light source in optoelectronic integration and Si photonics. The method may provide simple operation, flexibility, low cost, and low requirement for cleanness of manufacturing environments.

Abstract: A method for fabricating a selective area metal bonding Si-based laser, optically or electrically pumped includes: forming a Si waveguide area and a bonding area in a Silicon-On-Insulator (SOI) wafer, and forming an isolating structure to separate the Si waveguide area from the bonding area; forming a metal multilayer for bonding, which also acts as ohmic contact layer in the laser when the laser is electrically pumped. A compound semiconductor optical gain structure is prepared by epitaxial growth and etched off the substrate. The compound semiconductor optical gain structure is aligned with the Si waveguide area in the SOI wafer and the compound semiconductor optical gain structure is bonded on the SOI wafer. The selective area metal bonding Si-based laser can be used as a light source in optoelectronic integration and Si photonics. The method may provide simple operation, flexibility, low cost, and low requirement for cleanness of manufacturing environments.