Patents by Inventor Wei-Xin Ni

Wei-Xin Ni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Manufacturing method for nano scale Ge metal structure
    Publication number: 20090221144
    Abstract: Manufacturing methods for nano scale Ge include: Form dielectric layer on the substrate surface, then etch the dielectric layer to form openings of three different dimensions, then use chemical vapor deposition process to deposit Ge metal layer to cover the substrate, dielectric layer and the openings; then on the opening of three different dimensions, nano-dot, nano-disk and nano-ring are formed.
    Type: Application
    Filed: March 3, 2008
    Publication date: September 3, 2009
    Inventors: Ming-Hsin Cheng, Shih-Chiang Huang, Wei-Xin Ni, Guang-Li Luo