Patents by Inventor Weiya XIE

Weiya XIE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11719739
    Abstract: A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier ?c.
    Type: Grant
    Filed: July 6, 2020
    Date of Patent: August 8, 2023
    Assignee: TONGJI UNIVERSITY
    Inventors: Qian Cheng, Weiya Xie, Ya Gao, Yiming Chen, Yingna Chen, Mengjiao Zhang, Haonan Zhang, Shiying Wu
  • Publication number: 20220043049
    Abstract: A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier ?c.
    Type: Application
    Filed: July 6, 2020
    Publication date: February 10, 2022
    Applicant: TONGJI UNIVERSITY
    Inventors: Qian CHENG, Weiya XIE, Ya GAO, Yiming CHEN, Yingna CHEN, Mengjiao ZHANG, Haonan ZHANG, Shiying WU