Patents by Inventor Weiye He

Weiye He has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11942324
    Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.
    Type: Grant
    Filed: June 10, 2020
    Date of Patent: March 26, 2024
    Assignee: Applied Materials, Inc.
    Inventors: Qintao Zhang, Jun-Feng Lu, Ting Cai, Ma Ning, Weiye He, Jian Kang
  • Publication number: 20220189774
    Abstract: A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, including performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench, and depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.
    Type: Application
    Filed: June 10, 2020
    Publication date: June 16, 2022
    Applicant: Applied Materials, Inc.
    Inventors: Qintao Zhang, Jun-Feng Lu, Ting Cai, Ma Ning, Weiye He, Jian Kang