Abstract: An integrated power electronics assembly module includes a power unit and a clamping auxiliary circuit board. The power unit includes a power level circuit board and a shielding casing. The power level circuit board is contained in the shielding casing. The clamping auxiliary circuit board is disposed against the shielding casing and stacked with the power level circuit board to reduce a parasitic inductance generated by a commutation loop constituted by the power level circuit board and the clamping auxiliary circuit board. The clamping auxiliary circuit board is electrically coupled to the power level circuit board via the shielding casing.

Abstract: A converter includes a first bridge arm, a second bridge arm, two switch units and a voltage clamp circuit. The first bridge arm includes a first switch unit and a second switch unit that are electrically coupled in series at an output terminal. The second bridge arm includes two voltage sources that are electrically coupled in series at a neutral point terminal. The two switch units are electrically coupled in series at a common connection terminal, and are arranged between the neutral point terminal and the output terminal. The voltage clamp circuit is electrically coupled to the output terminal, the common connection terminal, the neutral point terminal, and one of a positive input terminal or a negative input terminal, and the circuit is shared by the two switch units to clamp voltages across the two switch units.

Abstract: A converter includes a first bridge arm and a voltage clamping unit. The first bridge arm includes a first switching unit. The voltage clamping unit is coupled to the first bridge arm, and includes a first charging branch and a second charging branch. The first charging branch is configured to have a first resonant frequency, to absorb a first spike of the first switching unit. The second charging branch is configured to have a second resonant frequency to absorb a second spike of the first switching unit.

Abstract: A converter includes a first bridge arm and a voltage clamping unit. The first bridge arm includes a first switching unit. The voltage clamping unit is coupled to the first bridge arm, and includes a first charging branch and a second charging branch. The first charging branch is configured to have a first resonant frequency, to absorb a first spike of the first switching unit. The second charging branch is configured to have a second resonant frequency to absorb a second spike of the first switching unit.

Abstract: An integrated power electronics assembly module includes a power unit and a clamping auxiliary circuit board. The power unit includes a power level circuit board and a shielding casing. The power level circuit board is contained in the shielding casing. The clamping auxiliary circuit board is disposed against the shielding casing and stacked with the power level circuit board to reduce a parasitic inductance generated by a commutation loop constituted by the power level circuit board and the clamping auxiliary circuit board. The clamping auxiliary circuit board is electrically coupled to the power level circuit board via the shielding casing.

Abstract: A converter includes a first bridge arm, a second bridge arm, two switch units and a voltage clamp circuit. The first bridge arm includes a first switch unit and a second switch unit that are electrically coupled in series at an output terminal. The second bridge arm includes two voltage sources that are electrically coupled in series at a neutral point terminal. The two switch units are electrically coupled in series at a common connection terminal, and are arranged between the neutral point terminal and the output terminal. The voltage clamp circuit is electrically coupled to the output terminal, the common connection terminal, the neutral point terminal, and one of a positive input terminal or a negative input terminal, and the circuit is shared by the two switch units to clamp voltages across the two switch units.

Abstract: A converter includes a first bridge arm, a second bridge arm, a switch circuit and a voltage clamp circuit. The first bridge arm includes a first switch unit and a second switch unit that are electrically coupled in series at an output terminal. The second bridge arm includes two voltage sources that are electrically coupled in series at a neutral point terminal. The switch circuit is disposed between the neutral point terminal and the output terminal. The voltage clamp circuit is electrically coupled to the output terminal, the neutral point terminal, and one of a positive input terminal and a negative input terminal, and is configured to clamp voltage across the switch circuit.

Abstract: The present invention discloses a method for preparing a zinc oxide (ZnO) nano rod substrate. First, a layer of ZnO nano particles was sputtered on the substrate and the ZnO nano rods were grown with the hydrothermal reaction on this substrate. Repeatedly proceeding the hydrothermal reaction can obtain a higher aspect ratio of the ZnO nano rods. According to this method, highly orientated ZnO nano rods will be prepared. The ZnO nano rods possess very high surface area and provide very effective pH tuning ability. The growth of ZnO nano rods on the plastic and fiber substrate were also prepared to increase the applicability.

Abstract: Surface plasmon resonance (SPR) sensing technique which provides high specificity and accuracy has been an important method for molecular sensing technology. In the past, in order to affix 45 nm gold film onto glass or silicon substrate, several nanometers of chromium (Cr) or titanium (Ti) has been used as adhesive layer for the attachment of Au film. However, the existence of Cr or Ti thin film deteriorates the performance of SPR sensor due to their characteristic optical absorption. Our experimental results have confirmed the uses of conducting metal oxide, specifically, ITO and Zinc Oxide (ZnO) can be used to replace Cr or Ti for better performance in terms of SPR resonant properties (resonant angle and HMBW) and sensitivity enhancement for 3 to 15 times than traditional ones. It would contribute significantly to the SPR applications in both biosensors and gas sensors.

Abstract: Surface plasmon resonance (SPR) sensing technique which provides high specificity and accuracy has been an important method for molecular sensing technology. In the past, in order to affix 45 nm gold film onto glass or silicon substrate, several nanometers of chromium (Cr) or titanium (Ti) has been used as adhesive layer for the attachment of Au film. However, the existence of Cr or Ti thin film deteriorates the performance of SPR sensor due to their characteristic optical absorption. Our experimental results have confirmed the uses of conducting metal oxide, specifically, ITO and Zinc Oxide (ZnO) can be used to replace Cr or Ti for better performance in terms of SPR resonant properties (resonant angle and HMBW) and sensitivity enhancement for 3 to 15 times than traditional ones. It would contribute significantly to the SPR applications in both biosensors and gas sensors.