Abstract: An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide.

Abstract: An optical electronic integrated (circuit (OEIC) having optical waveguides s device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

Abstract: An optical electronic integrated circuit (OEIC) having optical waveguides as device interconnects. An optical waveguide is formed by depositing, in an oxygen-free atmosphere, a film of semiconductor material on a semiconductor substrate at a temperature that substantially diminishes the porosity of the film and the diffusion of material from the substrate into the film. The semiconductor film, which has an index of refraction greater than that of the substrate, is etched to form the optical waveguide on the substrate. The substrate also supports a to plurality of active optical devices between which the optical waveguide extends. The substrate is preferably formed from gallium-arsenide and the waveguide from germanium. The active devices may also include these materials as well as aluminum-gallium-arsenide. When using these materials, the germanium film is deposited in an oxygen-free environment at about 100 degrees centigrade.

Abstract: A Schottky diode having a series of stacked layers starting with a conventional substrate having a semi-insulating GaAs layer and an un-doped GaAs buffer layer. An n-type Si--GaAs channel layer is grown on the GaAs buffer layer. A low-temperature-grown GaAs barrier layer covers the center portion of the upper surface of the n-type channel layer. The Schottky diode comprises two terminals. One diode terminal comprises a ohmic contact deposited on the upper surface of the channel layer. This ohmic contact, which is ring-shaped, encircles the barrier layer. The other diode terminal includes a metal layer that forms a Schottky contact with the upper surface of the barrier layer. The Ga-to-As ratio in the low-temperature-grown GaAs barrier layer is adjusted so that the barrier layer contains a sufficient number of free electrons to support current flow for bias voltages above the Schottky barrier height.