Abstract: A method for handling a read error on a block of a memory device is disclosed. In response to a read failure indicating that at least one error handling mechanism has handled the read error on the block and fails to read data stored in the block, a memory test is trigged to be performed on the block. The memory test is configured to determine whether the block malfunctions.

Abstract: In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.

Abstract: In certain aspects, a controller for controlling a memory device includes a memory and a processor. The memory is configured to store instructions. The processor is coupled to the memory and configured to execute the instructions to perform a process including receiving data describing a read failure of a set of error handling mechanisms, where the read failure indicates that the set of error handling mechanisms handles a read error on a block of the memory device and fails to read data stored in the block; and responsive to the read failure of the set of error handling mechanisms, performing a memory test on the block to determine whether the block malfunctions.

Abstract: Implementations of the present disclosure provide a memory apparatus that includes a plurality of memory cells stored with memory data in N dies. Each of the N dies includes M planes. Each of the M planes includes a memory block. The apparatus also includes a controller configured to determine J layers in the memory block in each of the M planes and in each of the N dies, each of the J layers comprising a pair of adjacent gate conductive layers. The controller is also configured to determine M sets of stripes. Each of the M sets of stripes comprising a plurality of data portions stored in a respective one of the M planes. The controller is further configured to determine M sets of parity data portions. The controller is further configured to control a temporary storage unit to store the M sets of parity data portions.

Abstract: Implementations of the present disclosure provide a memory apparatus that includes a plurality of memory cells stored with memory data in N dies. Each of the N dies includes M planes. Each of the M planes includes a memory block. The apparatus also includes a controller configured to determine J layers in the memory block in each of the M planes and in each of the N dies, each of the J layers comprising a pair of adjacent gate conductive layers. The controller is also configured to determine M sets of stripes. Each of the M sets of stripes comprising a plurality of data portions stored in a respective one of the M planes. The controller is further configured to determine M sets of parity data portions. The controller is further configured to control a temporary storage unit to store the M sets of parity data portions.