Patents by Inventor Weizhi HAN

Weizhi HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating heterojunction battery
    Patent number: 9023681
    Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.
    Type: Grant
    Filed: September 25, 2013
    Date of Patent: May 5, 2015
    Assignee: Chint Solar (Zhejiang) Co., Ltd.
    Inventors: Xinwei Niu, Cao Yu, Lan Ding, Junmei Rong, Shiyong Liu, Minghua Wang, Jinyan Hu, Weizhi Han, Yongmin Zhu, Hua Zhang, Tao Feng, Jianbo Jin, Zhanwei Qiu, Liyou Yang
  • METHOD OF FABRICATING HETEROJUNCTION BATTERY
    Publication number: 20140308773
    Abstract: The present invention discloses a method of fabricating a heterojunction battery, comprising the steps of: depositing a first amorphous silicon intrinsic layer on the front of an n-type silicon wafer, wherein the n-type silicon wafer may be a monocrystal or polycrystal silicon wafer; depositing an amorphous silicon p layer on the first amorphous silicon intrinsic layer; depositing a first boron doped zinc oxide thin film on the amorphous silicon p layer; forming a back electrode and an Al-back surface field on the back of the n-type silicon wafer; and forming a positive electrode on the front of the silicon wafer. In addition, the present invention further discloses a method of fabricating a double-sided heterojunction battery. In the present invention, the boron doped zinc oxide is used as an anti-reflection film in place of an ITO thin film; due to the special nature, especially the light trapping effect of the boron doped zinc oxide, the boron doped zinc oxide can achieve good anti-reflection.
    Type: Application
    Filed: September 25, 2013
    Publication date: October 16, 2014
    Applicant: Chint Solar (Zhejiang) Co., Ltd.
    Inventors: Xinwei NIU, Cao YU, Lan DING, Junmei RONG, Shiyong LIU, Minghua WANG, Jinyan HU, Weizhi HAN, Yongmin ZHU, Hua ZHANG, Tao FENG, Jianbo JIN, Zhanwei QIU, Liyou YANG