Abstract: The present disclosure provides formulations of an HGF/SF mimetic, terevalefim, as well as methods of preparing and using the formulations. The present disclosure also provides methods of synthesizing terevalefim.

Abstract: The present invention provides compositions and formulations of compounds having formula (I): and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: The present invention provides compositions and formulations of compounds having formula (I): and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

Abstract: Methods and systems for improved matching for on-chip capacitors may comprise in a semiconductor die comprising an on-chip capacitor with one or more metal layers: electrically coupling a first set of metal fingers, electrically coupling a second set of metal fingers that are interdigitated with the first set of metal fingers, wherein the first set of metal fingers and the second set of metal fingers are arranged symmetrically in the semiconductor die, and configuring the on-chip capacitor in a plurality of symmetric sections, wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern. The first set of metal fingers and the second set of metal fingers may be arranged with radial symmetry. A first set of metal fingers in a first metal layer may be electrically coupled to a set of metal fingers in a second metal layer.

Abstract: The present invention proposes a wireless probe type ultrasound scanner which comprises a housing, a housing cover, a transducer, a mainboard, a battery compartment, a battery and a backplane; the housing is matched and connected with the housing cover; the mainboard, the battery compartment, the battery and the backplane are arranged in a cavity body formed by the housing and the housing cover; the mainboard and the transducer are welded together; the mainboard is communicated with the transducer; the mainboard, the battery compartment, the backplane and the battery are laminated in order, wherein the battery is clamped on the battery compartment, a setting hole arranged on the end part of the transducer in a way of penetrating through the housing cover is clamped with the housing cover, and a Bluetooth and a power switch are arranged on the mainboard.

Abstract: A wheel-alternate stair climbing cart at least has one row of wheels (preferably two or more rows of wheels). Each row comprises a plurality of wheels. Two adjacent groups of wheels are intersected. The total length formed by connecting axle centers of a plurality of wheels can at least cross a vertex of three steps. The wheels on the stair at least keep contact with a vertex of two steps. The present invention better solves the problem that a traditional cart is blocked when operating on the stair or is bumpy when moving, and has the advantages of strong weight loading capability, difficult wear and low manufacturing cost.

Abstract: The present invention provides compositions and formulations of compounds having formula (I) and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

Abstract: Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of interconnected metal fingers comprising a first terminal of a second capacitor, and a third set of interconnected metal fingers comprising a common node that surrounds the first and second sets of interconnected metal fingers. The common node may comprise a second terminal of the capacitors. A repeating pattern of fingers may be: (third set/second set/third set/first set . . . ). The repeating pattern of metal fingers may be arranged in two parallel rows to mitigate variations in the semiconductor die. The interconnected metal fingers may comprise first and second metal layers formed on the semiconductor die.

Abstract: Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

Abstract: Methods and systems for a metal finger capacitor with a triplet repeating sequence incorporating a metal underpass may comprise repeating triplet capacitors integrated on a semiconductor die. The capacitors may comprise a first set of interconnected metal fingers comprising a first terminal of a first capacitor, a second set of interconnected metal fingers comprising a first terminal of a second capacitor, and a third set of interconnected metal fingers comprising a common node that surrounds the first and second sets of interconnected metal fingers. The common node may comprise a second terminal of the capacitors. A repeating pattern of fingers may be: (third set/second set/third set/first set . . . ). The repeating pattern of metal fingers may be arranged in two parallel rows to mitigate variations in the semiconductor die. The interconnected metal fingers may comprise first and second metal layers formed on the semiconductor die.

Abstract: The present invention provides compositions and formulations of compounds having formula (I) and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: The present invention provides compositions and formulations of compounds having formula (I) and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: Methods and systems for improved matching of on-chip capacitors may comprise a semiconductor die with an on-chip capacitor comprising one or more metal layers. The on-chip capacitor may comprise interdigitated electrically coupled metal fingers. The electrically coupled metal fingers may be arranged symmetrically in the semiconductor die to compensate for non-uniformities in the one or more metal layers. The metal fingers may be arranged with radial symmetry. Metal fingers in a first metal layer may be electrically coupled to metal fingers in a second metal layer. An orientation of metal fingers may be alternated when coupling metal fingers in a plurality of metal layers. The metal fingers may be coupled at the center or the outer edge of the on-chip capacitor. The on-chip capacitor may be configured in a plurality of symmetric sections wherein a boundary between each of the plurality of sections is configured in a zig-zag pattern.

Abstract: The present invention provides compositions and formulations of compounds having formula (I) and pharmaceutically acceptable derivatives thereof, wherein p, R1, R2 and B are as described generally and in classes and subclasses herein, and additionally provides pharmaceutical compositions thereof, and methods for the use thereof for the treatment of any of a number of injuries, conditions or diseases in which HGF/SF or the activities thereof, or agonists or antagonists thereof have a therapeutically useful role. In addition, methods are provided for treating such diseases or diseases starting at a time after the onset of the injury, condition or disease.

Abstract: A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.

Abstract: A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.

Abstract: A semiconductor device (2) includes a semiconductor substrate (12) having a surface (13) formed with a first recessed region (20). A first dielectric material (60) is deposited in the first recessed region and formed with a second recessed region (76), and a second dielectric material (100) is grown over the first dielectric material to seal the second recessed region.

Abstract: A method of forming a semiconductor device (1000) includes the step of exposing a first region (140) of a semiconductor substrate (101) with a photomask (180). A material is implanted into the first region to form a compound that masks the first region of the semiconductor substrate to form an electrode (155) of the semiconductor device.