Abstract: A method of forming semiconductor structure includes attaching backsides of top dies to a front side of a bottom wafer, the bottom wafer comprising a plurality of bottom dies; forming first conductive pillars on the front side of the bottom wafer adjacent to the top dies; forming a first dielectric material on the front side of the bottom wafer around the top dies and around the first conductive pillars; and dicing the bottom wafer to form a plurality of structures, each of the plurality of structures comprising at least one of the top dies and at least one of the bottom dies.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: In some aspects, a mask shape is represented by vertices that are connected by segments. A correction to the mask shape is received. The correction may include displacements of the segments and displacements of the vertices. The mask shape is modified by a processor, as follows. The segments are moved according to the segment displacements. As part of this process, vertices that are endpoints of the moved segments are replicated. The replicated vertices are then collapsed. The resulting vertices are then moved according to the vertex displacements. This process of modifying the mask shape may be used as part of a mask synthesis process, to synthesize or correct the mask shapes according to some desired result.

Abstract: The present invention provides a control method of a processor, wherein the control method comprises the steps of: transmitting image data of a first frame to an integrated circuit, wherein the first frame corresponds to a first frame rate; determining a second frame rate of a second frame next to the first frame; determining if a difference between the second frame rate and the first frame rate belongs to a large scale frame rate adjustment or a small scale frame rate adjustment; if the difference between the second frame rate and the first frame rate belongs to the large scale frame rate adjustment, using a first mode to transmit image data of the second frame; and if the difference between the second frame rate and the first frame rate belongs to the small scale frame rate adjustment, using a second mode to transmit image data of the second frame.

Abstract: An optical module includes a base, a holding component, an optical element, and at least one detachable structure. The holding component is disposed on the base, in which a position of the holding component relative to the base along a first axial direction is adjustable. The optical element is disposed on the holding component. The detachable structure is extended from one of the base and the holding component to face another one of the base and the holding component, so as to limit a position of the holding component relative to the base along a second axial direction.

Abstract: A channel hiatus correction method for an HDMI device is provided. A recovery code from scrambled data of the stream is obtained. A liner feedback shift register (LFSR) value of channels of the HDMI port is obtained based on the recovery code and the scrambled data of the stream. The stream is de-scrambled according to the LFSR value of the channels of the HDMI port. Video data is displayed according to the de-scrambled stream.

Abstract: A method includes providing a substrate having a surface such that a first hard mask layer is formed over the surface and a second hard mask layer is formed over the first hard mask layer, forming a first pattern in the second hard mask layer, where the first pattern includes a first mandrel oriented lengthwise in a first direction and a second mandrel oriented lengthwise in a second direction different from the first direction, and where the first mandrel has a top surface, a first sidewall, and a second sidewall opposite to the first sidewall, and depositing a material towards the first mandrel and the second mandrel such that a layer of the material is formed on the top surface and the first sidewall but not the second sidewall of the first mandrel.

Abstract: A method for forming a semiconductor structure includes the steps of forming a stacked structure on a substrate, forming an insulating layer on the stacked structure, forming a passivation layer on the insulating layer, performing an etching process to form an opening through the passivation layer and the insulating layer to expose a portion of the stacked structure and an extending portion of the insulating layer, and forming a contact structure filling the opening and directly contacting the stacked structure, wherein the extending portion of the insulating layer is adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: According to the present disclosure, a measuring method of liquid mixture purity includes steps as follows. A storage tank is provided, wherein the storage tank is configured for storing a liquid mixture including formic acid and water. A calculating unit is provided, wherein a plurality of formic acid purity values are saved in the calculating unit. A pressure-decreasing and heating step is performed by reducing a pressure of the storage tank and heating the storage tank. A measuring step is performed by measuring in the inner space of the storage tank to obtain a pressure value, and measuring the liquid mixture simultaneously to obtain a temperature value. A calculating step is performed by inputting the pressure value and the temperature value into the calculating unit, wherein the calculating unit outputs one of the formic acid purity values corresponding thereto.

Abstract: A method includes forming isolation regions extending into a semiconductor substrate. A semiconductor strip is between the isolation regions. The method further includes recessing the isolation regions so that a top portion of the semiconductor strip protrudes higher than top surfaces of the isolation regions to form a semiconductor fin, measuring a fin width of the semiconductor fin, generating an etch recipe based on the fin width, and performing a thinning process on the semiconductor fin using the etching recipe.

Abstract: A method, system, and article provide image processing with power reduction while using universal serial bus cameras.

Abstract: A reading method and a reading device for a two-dimensional code. The method includes: capturing a two-dimensional code image through an image capturing device; detecting an outer frame and a position mark of a two-dimensional code in a skewed state in the two-dimensional code image; restoring the two-dimensional code in the skewed state to a default state; and performing a default operation according to the two-dimensional code in the default state.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: A manufacturing method of a semiconductor structure is provided. A first semiconductor die includes a first semiconductor substrate, a first interconnect structure formed thereon, a first bonding conductor formed thereon, and a conductive via extending from the first interconnect structure toward a back surface of the first semiconductor substrate. The first semiconductor substrate is thinned to accessibly expose the conductive via to form a through semiconductor via (TSV). A second semiconductor die is bonded to the first semiconductor die. The second semiconductor die includes a second semiconductor substrate including an active surface facing the back surface of the first semiconductor substrate, a second interconnect structure between the second and the first semiconductor substrates, and a second bonding conductor between the second interconnect structure and the first semiconductor substrate and bonded to the TSV.

Abstract: A directional patterning method includes following steps. A substrate is provided with a mask layer thereon, and the mask layer has at least one opening pattern therein. A cyclic deposition and etching process is performed to increase a length of the at least one opening pattern.

Abstract: The present invention is directed to a method of treating acute ischemic stroke in a human comprising administering one of more low doses of DC009, wherein the dose is about 0.01-0.075 mg/kg/dose. The low dose administration is safe and effective in treating acute ischemic stroke in a human subject.

Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.

Abstract: A method of manufacturing a semiconductor device including operations of forming a first hard mask over an underlying layer on a substrate by a photolithographic and etching method, forming a sidewall spacer pattern having a first sidewall portion and a second sidewall portion on opposing sides of the first hard mask, etching the first sidewall portion, etching the first hard mask and leaving the second sidewall portion bridging a gap of the etched first hard mask, and processing the underlying layer using the second hard mask.

Abstract: The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes forming a hard mask layer over a substrate, the substrate having one or more regions to receive a treatment process, forming a resist layer over the hard mask layer, patterning the resist layer to form a plurality of openings in the resist layer, each of the openings free of concave corners, performing an opening expanding process to enlarge at least one of the openings in the resist layer, transferring the openings in the resist layer to the hard mask layer, and performing the treatment process to the one or more regions in the substrate through the openings in the hard mask layer.