Abstract: A semiconductor device includes a first contact layer, a second contact layer, an active layer, a photonic crystal layer, a passivation layer, a first electrode and a second electrode. The first contact layer has a first surface and a second surface opposite to each other. Microstructures are located on the second surface. The second contact layer is located below the first surface. The active layer is located between the first contact layer and the second contact layer. The photonic crystal layer is located between the active layer and the second contact layer. The passivation layer is located on the second contact layer. The first electrode is located on the passivation layer and is electrically connected the first surface of the first contact layer. The second electrode is located on the passivation layer and is electrically connected to the second contact layer.

Abstract: The present invention provides a pulse diagnosis device including at least one bellow, at least one sensor, and a locating element. The bellow has a sensing surface having a first end and a second end opposite to each other. The sensor is disposed on the sensing surface and has a sensing area at least partially extending from the first end to the second end or protruding from the second end. The locating element is at least partially disposed along the second end to position the sensor at the second end, wherein the sensing area does not overlap with the locating element at least partially.

Abstract: A manufacturing method of a sensor including the following steps and a sensor are provided. An active device and a first insulation layer covering the active device are formed on a substrate. The first insulation layer has a first opening exposing a portion of the active device. A blanket conductive layer is formed on the first insulation layer using a conductive material. The blanket conductive layer is connected to the active device through the first opening. A photoelectric conversion material layer is formed on the blanket conductive layer. A first photoresist pattern formed on photoelectric conversion material layer is served as a mask for patterning the photoelectric conversion material layer into a photoelectric conversion unit. The blanket conductive layer is patterned to form a first electrode disposed in the first opening and electrically connecting the photoelectric conversion unit to the active device.

Abstract: A transflective pixel structure including a reflective region and a transmittance region is provided. The pixel structure includes an active device, a covering layer, a reflective electrode layer, a reflective electrode pattern and a transparent electrode layer. The covering layer is disposed in the reflective region and the transmittance region and covers the active device, where the covering layer has a contact opening at least disposed in the transmittance region. The reflective electrode layer is disposed in the reflective region. The reflective electrode pattern is disposed within the contact opening and extends onto a top surface of the covering layer surrounding the contact opening. The transparent electrode layer is disposed on a surface of the covering layer in the transmittance region. The transparent electrode layer is electrically connected to the reflective electrode layer and the transparent electrode layer is electrically connected to the active device through the contact opening.

Abstract: An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of the substrate and the second cutting line. The active devices of the pixel arrays have a semiconductor layer. The polymer-stabilized alignment curing circuit disposed on the circuit region includes curing pads disposed between the edge of the substrate and the first cutting line and curing lines having an upper conductive layer connected to the corresponding curing pads and the corresponding pixel array. The upper conductive layer is in the same layer as the source/drain conductor. Therefore, the curing lines are capable of preventing problems such as peeling, so as to keep the polymer-stabilized alignment curing circuit operating normally.

Abstract: A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.

Abstract: A transflective pixel structure including a reflective region and a transmittance region is provided. The pixel structure includes an active device, a covering layer, a reflective electrode layer, a reflective electrode pattern and a transparent electrode layer. The covering layer is disposed in the reflective region and the transmittance region and covers the active device, where the covering layer has a contact opening at least disposed in the transmittance region. The reflective electrode layer is disposed in the reflective region. The reflective electrode pattern is disposed within the contact opening and extends onto a top surface of the covering layer surrounding the contact opening. The transparent electrode layer is disposed on a surface of the covering layer in the transmittance region. The transparent electrode layer is electrically connected to the reflective electrode layer and the transparent electrode layer is electrically connected to the active device through the contact opening.

Abstract: An active device array mother substrate including a substrate, pixel arrays, and a polymer-stabilized alignment curing circuit is provided. The substrate has panel regions, a circuit region, a first cutting line, and a second cutting line. The first cutting line is disposed on the circuit region between an edge of the substrate and the second cutting line. The active devices of the pixel arrays have a semiconductor layer. The polymer-stabilized alignment curing circuit disposed on the circuit region includes curing pads disposed between the edge of the substrate and the first cutting line and curing lines having an upper conductive layer connected to the corresponding curing pads and the corresponding pixel array. The upper conductive layer is in the same layer as the source/drain conductor. Therefore, the curing lines are capable of preventing problems such as peeling, so as to keep the polymer-stabilized alignment curing circuit operating normally.

Abstract: A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, then the polycrystalline film is ions implanted, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.

Abstract: The invention provides a new primer composition for detecting the presence of Shigella sonnei and a method of using the same. The primer composition and method have high specificity and sensitivity on the detection of Shigella sonnei. The invention also provides a method for extracting the nucleic acids of microorganisms in a solution sample.

Abstract: A pet-like toy combined with MP3 player, wherein once said pet-like toy receives a music signal from said MP3 player, it can perform correspondingly a sound and light effect or an action. Said pet-like toy comprises a main body that mimics a shape of an animal and is provided with a base of the head part; a MP3 player that is configured into a shape of the pet's head, and is combined dismountably on the base of said pet's head part' a circuit controlling unit that is provided on said base of the head part to control said pet-like toy in performing a sound and light effect or an action. Further, when said MP3 player is separated form said pet-like toy, said MP3 player can be used separately.

Abstract: The invention provides a new primer composition for detecting the presence of Shigella sonnei and a method of using the same. The primer composition and method have high specificity and sensitivity on the detection of Shigella sonnei. The invention also provides a method for extracting the nucleic acids of microorganisms in a solution sample.

Abstract: A thin film transistor (TFT) formed on a substrate includes a polycrystalline film, a gate insulator, a hydrogen-supplying film and a gate electrode. The polycrystalline film is formed on the substrate. Two sides of the polycrystalline film serve as the source and the drain of the semiconductor device, and the central region of the polycrystalline layer serves as the channel. The gate insulator is formed on the polycrystalline film, and the hydrogen-supplying film is formed on the gate insulator. The gate electrode is formed on the hydrogen-supplying film above the channel. The hydrogen-supplying film supplies hydrogen to the polycrystalline film, especially to the channel, so as to transform the unsaturated bonds into hydrogen bonds in the channel for avoiding the unsaturated bonds to degrade the charge carrier efficiency of the channel.

Abstract: The invention provides a new primer composition for detecting the presence of Shigella sonnei and a method of using the same. The primer composition and method have high specificity and sensitivity on the detection of Shigella sonnei.

Abstract: The invention provides a new primer composition for detecting the presence of Shigella sonnei and a method of using the same. The primer composition and method have high specificity and sensitivity on the detection of Shigella sonnei.