Patents by Inventor Wen-Bin Wu
Wen-Bin Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 7304323Abstract: Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.Type: GrantFiled: December 11, 2003Date of Patent: December 4, 2007Assignee: Nanya Technology CorporationInventor: Wen-Bin Wu
-
Publication number: 20070190736Abstract: A small-size (w<0.5 micrometers) alignment mark in combination with a “k1 process” is proposed, which is particularly suited for the fabrication of trench-capacitor DRAM devices which requires highly accurate AA-DT and GC-DT overlay alignment. The “k1 process” is utilized to etch away polysilicon studded in the alignment mark trenches and to refresh the trench profile, thereby improving overlay alignment accuracy and precision.Type: ApplicationFiled: December 27, 2006Publication date: August 16, 2007Inventors: An-Hsiung Liu, Chiang-Lin Shih, Wen-Bin Wu, Hui-Min Mao, Lin-Chin Su, Pei-Ing Lee
-
Patent number: 7090965Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.Type: GrantFiled: July 1, 2003Date of Patent: August 15, 2006Assignee: Nanya Technology CorporationInventors: Wen-Bin Wu, Yuan-Shan Wu, Yi-Nan Chen, Teng-Yen Huang
-
Patent number: 7052810Abstract: A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.Type: GrantFiled: June 18, 2004Date of Patent: May 30, 2006Assignee: Nanya Technology CorporationInventors: Tsan Lu, Wen-Bin Wu, Yung-Long Hung, Cheng-Kung Lu
-
Patent number: 6998226Abstract: A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35 ° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.Type: GrantFiled: July 10, 2002Date of Patent: February 14, 2006Assignee: Nanya Technology CorporationInventors: Yuan-Hsun Wu, Wen-Bin Wu, Yung Long Hung, Ya Chih Wang
-
Patent number: 6987053Abstract: A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.Type: GrantFiled: March 3, 2004Date of Patent: January 17, 2006Assignee: Nanya Technology CorporationInventors: Wen-Bin Wu, Chih-Yuan Hsiao, Hui-Min Mao
-
Patent number: 6929902Abstract: A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.Type: GrantFiled: February 20, 2003Date of Patent: August 16, 2005Assignee: Nanya Technology CorporationInventors: Yuan-Hsun Wu, Teng-Yen Huang, Wen-Bin Wu, Yi-Nan Chen
-
Publication number: 20050168740Abstract: A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.Type: ApplicationFiled: March 25, 2005Publication date: August 4, 2005Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Wen-Bin Wu, Chih-Yuan Hsiao, Hui-Min Mao
-
Publication number: 20050127356Abstract: Disclosed is a test mask structure. The test mask structure of the present invention comprises at least an array pattern region, in a certain proportion to the final product, having a first pattern density according to the certain proportion; and at least one test mask pattern region having a second pattern density. In the test mask structure of the present invention, the required pattern density is obtained by adjusting the area of the array pattern region and the area of the test mask pattern region according to the first pattern density and the second pattern density.Type: ApplicationFiled: December 11, 2003Publication date: June 16, 2005Applicant: Nanya Technology CorporationInventor: Wen-Bin Wu
-
Publication number: 20050048654Abstract: A method for evaluating reticle registration between two reticle patterns. A wafer is defined and etched to form a first exposure pattern, by photolithography with a first reticle having a first reticle pattern thereon. A photoresist layer is formed over the wafer and defined as a second exposure pattern, by photolithography with a second reticle having a second reticle pattern thereon. A deviation value between the first and second exposure patterns is measured by a CD-SEM. The deviation value is calibrated according to the scaling degree and the overlay offset to obtain a registration data. The reticle registration between the two reticle patterns is evaluated based on the registration data.Type: ApplicationFiled: March 3, 2004Publication date: March 3, 2005Inventors: Wen-Bin Wu, Chih-Yuan Hsiao, Hui-Min Mao
-
Publication number: 20050022150Abstract: An optical proximity correction (OPC) method for correcting a photomask layout. The photomask layout has at least a photomask pattern. The steps of the OPC method include collecting an assist feature bias of a predetermined assist feature, performing a rule-based OPC by taking account of the assist feature bias to compute a target bias of the photomask layout, outputting a corrected photomask layout according to the target bias, and adding the predetermined assist feature to the corrected photomask layout.Type: ApplicationFiled: December 1, 2003Publication date: January 27, 2005Inventors: Shu-Hui Liu, Wen-Bin Wu
-
Publication number: 20050003284Abstract: A method of correcting optical proximity effect of contact holes. Corresponding relations between mask critical dimensions (mCDs) and photoresist critical dimensions (pCDs) for each pitch (d) are formed. Correction of each mCD for each combination of pCDs and pitches is determined based on the corresponding relations. The correction is used first to correct each contact hole of a processing mask pattern. The first corrected contact hole of the processing mask pattern is corrected again to a square having the same area as the first corrected contact hole and the same center as the uncorrected contact hole.Type: ApplicationFiled: June 18, 2004Publication date: January 6, 2005Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Tsan Lu, Wen-Bin Wu, Yung-Long Hung, Cheng-Kung Lu
-
Publication number: 20040202964Abstract: A method for enhancing adhesion between a reworked photoresist and an underlying oxynitride film. A photoresist pattern layer is formed on an oxynitride layer overlying a substrate. The photoresist pattern layer is removed by acidic solution or oxygen-containing plasma. A surface treatment is performed on the oxynitride layer using a development solution to repair the damaged oxynitride layer due to removing the overlying photoresist pattern layer. A reworked photoresist pattern layer is formed on the oxynitride layer.Type: ApplicationFiled: July 1, 2003Publication date: October 14, 2004Applicant: Nanya Technology CorporationInventors: Wen-Bin Wu, Yuan-Hsun Wu, Yi-Nan Chen, Teng-Yen Huang
-
Patent number: 6742367Abstract: A lock. The lock includes an inner handle assembly, a latch bolt, and an outer handle assembly. The outer handle assembly includes an outer handle, an outer spindle, an actuating sleeve rotatably mounted in the outer spindle and having two guide slots each having an inclined section and a horizontal section, a locking plate mounted in the actuating sleeve and including two wings, and an unlatching member operably connected to the latch bolt. Each wing is extended through an associated guide slot into an associated positioning slot in the outer spindle. When the lock is in an unlocked state, the unlatching member is engaged with the locking plate to allow joint rotation. When the lock is in a locked state, the unlatching member is disengaged from the unlatching member such that the unlatching member is not turned when the outer handle is turned.Type: GrantFiled: August 19, 2002Date of Patent: June 1, 2004Assignee: Taiwan Fu Hsing Industrial Co., LtdInventor: Wen bin Wu
-
Publication number: 20040079729Abstract: A process for etching a metal layer. First, a semiconducting substrate having a metal layer and an anti-reflective layer thereon is provided. Next, the surface of the anti-reflective layer is treated with a weak base aqueous solution. Next, a photoresist layer is formed on the treated anti-reflective layer and then patterned. Next, the treated anti-reflective layer and metal layer are etched using the photoresist pattern as a mask. Finally, the photoresist pattern and anti-reflective layer are removed. The present invention prevents undercut and collapse of photoresist pattern, thus obtaining an accurate metal layer pattern.Type: ApplicationFiled: February 27, 2003Publication date: April 29, 2004Applicant: Nanya Technology CorporationInventors: Yi-Nan Chen, Wen-Bin Wu, Teng-Yen Huang, Chun-Cheng Liao, Yuan-Hsun Wu, Hung Wen Lin
-
Publication number: 20040081923Abstract: A method of preventing repeated collapse in a reworked photoresist layer. First, oxygen-containing plasma is applied to remove a collapsed photoresist. Because the plasma containing oxygen reacts with a bottom anti-reflect layer comprising SiOxNy, some acids are produced on the bottom anti-reflect layer, resulting in undercutting in a subsequently reworked photoresist. Next, an alkaline solution treatment is performed on the anti-reflect layer after the collapsed photoresist layer is removed. Finally, the reworked photoresist with is formed on the anti-reflect layer, without undercutting.Type: ApplicationFiled: February 20, 2003Publication date: April 29, 2004Applicant: Nanya Technology CorporationInventors: Yuan-Hsun Wu, Teng-Yen Huang, Wen-Bin Wu, Yi-Nan Chen
-
Publication number: 20040031300Abstract: A lock comprises an inner handle assembly, a latch bolt, and an outer handle assembly. The outer handle assembly comprises an outer handle, an outer spindle, an actuating sleeve rotatably mounted in the outer spindle and having two guide slots each having an inclined section and a horizontal section, a locking plate mounted in the actuating sleeve and including two wings, and an unlatching member operably connected to the latch bolt. Each wing is extended through an associated guide slot into an associated positioning slot in the outer spindle. When the lock is in an unlocked state, the unlatching member is engaged with the locking plate to allow joint rotation. When the lock is in a locked state, the unlatching member is disengaged from the unlatching member such that the unlatching member is not turned when the outer handle is turned.Type: ApplicationFiled: August 19, 2002Publication date: February 19, 2004Applicant: Taiwan Fu Hsing Industrial Co., Ltd.Inventor: Wen-Bin Wu
-
Publication number: 20030180666Abstract: A method of forming a patterned photoresist layer. First, an anti-reflection coating layer is formed on a substrate. Next, a first bake is performed. A photoresist layer is then formed on the anti-reflection coating layer. Exposure is performed. A second bake is performed, wherein the temperature difference between the first bake and the second bake is about 35° C.˜55 ° C. Finally, development is performed. The patterned photoresist layer features have perfect profiles in accordance with this invention.Type: ApplicationFiled: July 10, 2002Publication date: September 25, 2003Applicant: NANYA TECHNOLOGY CORPORATIONInventors: Yuan-Hsun Wu, Wen-Bin Wu, Yung Long Hung, Ya Chih Wang
-
Patent number: 6536249Abstract: A lock device that may be locked automatically includes a base fixed on a door plate. An actuating tube received in the hole of the base is provided with a locking member combined with a handle. The lock core unit has a lock core that may drive an actuating plate to rotate. The drive wheel has a drive slot for insertion of the actuating plate, so that the drive wheel and the actuating plate may be rotated simultaneously. An elastic member has two stop ends rested on the leg of the restoring wheel, and rested on the two sides of the ear plate of the locking plate. The drive plate has a first end inserted into an unlocking rotation knob of the other side of the door plate, and a second end inserted into the drive slot of the drive wheel.Type: GrantFiled: April 30, 2002Date of Patent: March 25, 2003Assignee: Taiwan Fu Hsing Industrial Co., Ltd.Inventor: Wen-Bin Wu
-
Publication number: 20030038487Abstract: A reinforcing structure of a latch of an auxiliary lock includes a lock tongue set having a lock tongue provided with at least one concave portion. A reinforcing plate is fixed in the gap between the concave portion of the lock tongue and the housing, so that the housing may withstand and support a larger external impact force.Type: ApplicationFiled: August 21, 2001Publication date: February 27, 2003Applicant: Taiwan Fu Hsing Industrial Co., Ltd.Inventors: Wen Bin Wu, Chao-Ming Huang