Patents by Inventor Wen-Bing Lin

Wen-Bing Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6153849
    Abstract: An apparatus and a method for preventing etch rate drop after a machine idle time in a plasma etch chamber are disclosed. In the apparatus, an enclosure for enclosing a top plate in the plasma etch chamber is provided which is equipped with a heater in fluid communication with the enclosure. The top plate which includes a dielectric window and an inductive coil can be heated to a temperature between about 35.degree. C. and about 45.degree. C. during machine idle time to prevent etch rate drop after the chamber is restarted. The plasma etch chamber may be an inductively coupled RF plasma etcher. The heater may be constructed by a heater housing which is in fluid communication with the enclosure, at least one heating lamp in the housing, and a blower for delivering heated air into the enclosure cavity.
    Type: Grant
    Filed: January 29, 1999
    Date of Patent: November 28, 2000
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ken-Yuan Yung, Ming-Shue Yan, Tsar-Yi Chen, Wen-Bing Lin, Chuan-Yi Wang