Abstract: A method for forming damage free patterned layers adjoining the edges of high step height apertures within integrated circuits. There is first provided a semiconductor substrate which has a first aperture formed therein. Formed upon the semiconductor substrate and into the first aperture is a blanket layer. The blanket layer has a second aperture formed therein where the blanket layer is formed into the first aperture. Formed then into the second aperture is a buffer layer. The buffer layer substantially planarizes the blanket layer. Formed then upon the semiconductor substrate is a blanket photoresist layer. The blanket photoresist layer and the blanket layer are then sequentially patterned to form a patterned photoresist layer and a damage free patterned layer.

Abstract: A book shelf including a base having a channel formed in a bottom for slidably receiving a slide, a number of holes formed along each of two side edges of each of the base and the slide, two stays each including a pair of legs coupled together at an arm, the legs of the stays being engageable in the holes of the base and the slide so that objects which are disposed on the book shelf can be supported between the stays.

Abstract: A process for producing a rare earth magnet of magnetically improved performance wherein a specific titanate coupling agent is added in one step of the process to enhance the oxidation resistance of the raw materials during production and a special degassing step is incorporated to allow for the removal of the residual titanate coupling agent. The resultant rare earth magnet exhibits improved maximum magnetic energy product ((BH).sub.max) and magnetic coercive force (H.sub.c) as well as other magnetic properties. Rare earth magnet produced by the process is also disclosed.