Patents by Inventor Wen C. Chang

Wen C. Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240121547
    Abstract: A venting device includes a first flap, which is configured to be actuated to swing upward during a rising time, and a second flap, which is disposed opposite to the first flap and configured to be actuated to swing downward during a falling time, a first actuating portion disposed on the first flap, and a second actuating portion disposed on the second flap. The venting device configured to form a vent is disposed within a wearable sound device or to be disposed within the wearable sound device. The vent is formed via applying a first voltage to the first actuating portion and applying a second voltage on the second actuating portion, such that the venting device gradually forms the vent.
    Type: Application
    Filed: December 6, 2023
    Publication date: April 11, 2024
    Applicant: xMEMS Labs, Inc.
    Inventors: Wen-Chien Chen, Kai-Chieh Chang, Chiung C. Lo, Yuan-Shuang Liu
  • Patent number: 11943595
    Abstract: A cell includes a membrane and an actuating layer. The membrane includes a first membrane subpart and a second membrane subpart, wherein the first membrane subpart and the second membrane subpart are opposite to each other. The actuating layer is disposed on the first membrane subpart and the second membrane subpart. The first membrane subpart includes a first anchored edge which is fully or partially anchored, and edges of the first membrane subpart other than the first anchored edge are non-anchored. The second membrane subpart includes a second anchored edge which is fully or partially anchored, and edges of the second membrane subpart other than the second anchored edge are non-anchored.
    Type: Grant
    Filed: October 19, 2022
    Date of Patent: March 26, 2024
    Assignee: xMEMS Labs, Inc.
    Inventors: Chiung C. Lo, Hao-Hsin Chang, Wen-Chien Chen, Chun-I Chang
  • Patent number: 5633210
    Abstract: A method for forming damage free patterned layers adjoining the edges of high step height apertures within integrated circuits. There is first provided a semiconductor substrate which has a first aperture formed therein. Formed upon the semiconductor substrate and into the first aperture is a blanket layer. The blanket layer has a second aperture formed therein where the blanket layer is formed into the first aperture. Formed then into the second aperture is a buffer layer. The buffer layer substantially planarizes the blanket layer. Formed then upon the semiconductor substrate is a blanket photoresist layer. The blanket photoresist layer and the blanket layer are then sequentially patterned to form a patterned photoresist layer and a damage free patterned layer.
    Type: Grant
    Filed: April 29, 1996
    Date of Patent: May 27, 1997
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Bao R. Yang, Sen F. Chen, Wen C. Chang, Po-Tau Chu
  • Patent number: 5121681
    Abstract: A book shelf including a base having a channel formed in a bottom for slidably receiving a slide, a number of holes formed along each of two side edges of each of the base and the slide, two stays each including a pair of legs coupled together at an arm, the legs of the stays being engageable in the holes of the base and the slide so that objects which are disposed on the book shelf can be supported between the stays.
    Type: Grant
    Filed: July 11, 1991
    Date of Patent: June 16, 1992
    Inventor: Wen C. Chang
  • Patent number: 5087302
    Abstract: A process for producing a rare earth magnet of magnetically improved performance wherein a specific titanate coupling agent is added in one step of the process to enhance the oxidation resistance of the raw materials during production and a special degassing step is incorporated to allow for the removal of the residual titanate coupling agent. The resultant rare earth magnet exhibits improved maximum magnetic energy product ((BH).sub.max) and magnetic coercive force (H.sub.c) as well as other magnetic properties. Rare earth magnet produced by the process is also disclosed.
    Type: Grant
    Filed: January 18, 1991
    Date of Patent: February 11, 1992
    Assignee: Industrial Technology Research Institute
    Inventors: Cheng H. Lin, Shi K. Chen, Ying C. Hung, Wen S. Ko, Wen C. Chang