Abstract: A semiconductor device comprises a first semiconductor structure, a second semiconductor structure located on the first semiconductor structure, and an active layer located between the first semiconductor structure and the second semiconductor structure. The first semiconductor structure has a first conductivity type, and includes a plurality of first layers and a plurality of second layers alternately stacked. The second semiconductor structure has a second conductivity type opposite to the first conductivity type. The plurality of first layers and the plurality of second layers include indium and phosphorus, and the plurality of first layers and the plurality of second layers respectively have a first indium atomic percentage and a second indium atomic percentage. The second indium atomic percentage is different from the first indium atomic percentage.

Abstract: A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, a first absorber layer disposed on the capping layer, a first multilayer disposed over the first absorber layer, a second absorber layer disposed on the first multilayer layer, and a second multilayer, which is an uppermost layer of the reflective mask, disposed over the second absorber layer.

Abstract: A reticle is provided. The reticle includes a first reflective multilayer (ML) over a mask substrate and a capping layer over the first reflective ML. The reticle also includes a first absorption layer over the capping layer and a second reflective multilayer (ML) over the first absorption layer. The reticle further includes an etch stop layer over the second reflective ML and a third reflective multilayer (ML) over the etch stop layer. In addition, the reticle includes an absorption film pair over the third reflective ML.

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.

Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

Abstract: A method for forming an extreme ultraviolet photolithography mask includes forming a reflective multilayer, forming a buffer layer on the reflective multilayer, and forming an absorption layer on the reflective multilayer. Prior to patterning the absorption layer, an outer portion of the absorption layer is removed. Photoresist is then deposited on the top surface of the absorption layer and on sidewalls of the absorption layer. The photoresist is then patterned, and the absorption layer is etched with a plasma etching process in the presence of the patterned photoresist. The presence of the photoresist on the sidewalls of the absorption layer during the plasma etching process helps to improve uniformity in the etching of the absorption layer during the plasma etching process.

Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.

Abstract: A method for manufacturing a reticle is provided. The method includes forming a first reflective multilayer over a mask substrate. The method also includes forming a capping layer over the first reflective ML. The method further includes depositing a first absorption layer over the capping layer. In addition, the method includes depositing an etch stop layer over the first absorption layer. The method also includes forming a second reflective multilayer (ML) over the etch stop layer. The method further includes forming a second absorption layer over the second reflective ML. In addition, the method includes forming an opening through the second absorption layer and the second reflective ML until the etch stop layer is exposed. The method also includes etching the etch stop layer and the first absorption layer through the opening until the capping layer is exposed.

Abstract: A reflective mask blank includes a substrate, a reflective multilayer (RML) disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer has length or width dimensions smaller than the capping layer, and part of the capping layer is exposed by the absorber layer. The dimension of the absorber layer and the hard mask layer ranges between 146 cm to 148 cm. The dimensions of the substrate, the RML, and the capping layer range between 150 cm to 152 cm.

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

Abstract: Photomasks and methods of fabricating the photomasks are provided herein. In some examples, a layout for forming an integrated circuit device is received. The layout includes a set of printing features. A region of the layout is identified. The region is at a distance from the set of printing features such that an exposure region associated with a feature in the region does not affect a set of exposure regions associated with the set of printing features. A plurality of non-printing features is inserted into the region. A photomask is fabricated based on the layout.

Abstract: A reticle and a method for manufacturing the same are provided. The reticle includes a mask substrate, a reflective multilayer (ML), a capping layer and an absorption composite structure. The reflective ML is positioned over a front-side surface of the mask substrate. The capping layer is positioned over the reflective ML. The absorption composite structure is positioned over the capping layer. The absorption composite structure includes a first absorption layer, a second absorption layer, a third absorption layer and an etch stop layer. The first absorption layer is positioned over the capping layer. The second absorption layer is positioned over the first absorption layer. The third absorption layer is positioned over the second absorption layer. The etch stop layer is positioned between the first absorption layer and the second absorption layer. The first absorption layer and the second absorption layer are made of the same material.

Abstract: A method and a system for inspection of a patterned structure are provided. In various embodiments, the method for inspection of a patterned structure includes transferring the patterned structure into a microscope. The method further includes acquiring a top-view image of the patterned structure by the microscope. The method further includes transferring the patterned structure out of the microscope and exporting the top-view image to an image analysis processor. The method further includes measuring a difference between a contour of the top-view image and a predetermined layout of the patterned structure by the image analysis processor.

Abstract: The present disclosure provides a structure of a photomask. The photomask includes a substrate; and a conductive material layer dispose over the substrate and patterned to include a plurality of openings and a recess structure surrounding the plurality of openings.

Abstract: A reticle and a method of fabricating the reticle are provided. In various embodiments, the reticle includes a substrate, a patterned first attenuating layer, a patterned second attenuating layer, and a patterned third attenuating layer. The patterned first attenuating layer is disposed on the substrate. The patterned second attenuating layer is disposed on the patterned first attenuating layer. The patterned third attenuating layer is disposed on the patterned second attenuating layer. A first part of the patterned first attenuating layer, a first part of patterned second attenuating layer, and the patterned third attenuating layer are stacked on the substrate as a binary intensity mask portion.

Abstract: A method and a system for inspection of a patterned structure are provided. In various embodiments, the method for inspection of a patterned structure includes transferring the patterned structure into a microscope. The method further includes acquiring a top-view image of the patterned structure by the microscope. The method further includes transferring the patterned structure out of the microscope and exporting the top-view image to an image analysis processor. The method further includes measuring a difference between a contour of the top-view image and a predetermined layout of the patterned structure by the image analysis processor.