Abstract: An imaging lens assembly module includes a lens barrel, a catadioptric lens assembly, an imaging lens assembly, a first fixing element and a second fixing element. The lens barrel has a first relying surface and a second relying surface, which face towards an object side of the imaging lens assembly module. The catadioptric lens assembly relies on the first relying surface. The imaging lens assembly is disposed on an image side of the catadioptric lens assembly, and relies on the second relying surface. The first fixing element is for fixing the catadioptric lens assembly to the lens barrel. The second fixing element is for fixing the imaging lens assembly to the lens barrel. The catadioptric lens assembly is for processing at least twice internal reflections of an image light in the imaging lens assembly module, and for providing optical refractive power.

Abstract: An electronic device includes a substrate, a driving layer, an organic layer and a diode. The driving layer is disposed on the substrate, and the driving layer includes a thin film transistor. The organic layer is disposed on the driving layer, and the organic layer includes a through hole portion. The diode is disposed on the organic layer and overlapped with the through hole portion, the diode is electrically connected to the driving layer by a bonding pad overlapped with the through hole portion, and the diode is not overlapped with the thin film transistor.

Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.

Abstract: An electronic device includes a first substrate, a first conductive layer, a plurality of first electrode pads, a plurality of first light-emitting units, a plurality of first signal pads and a conductive structure. The first conductive layer is disposed on the first substrate. The first electrode pads are disposed on the first conductive layer. The first light-emitting units overlap and are disposed on the first electrode pads. The first light-emitting units are electrically connected to the first electrode pads respectively. The first signal pads are disposed on the first conductive layer and electrically connected to the first conductive layer. The conductive structure is disposed on the first signal pads, and at least two of the first signal pads are electrically connected to each other through the conductive structure.

Abstract: A light-emitting module is provided. The light-emitting module includes a light-emitting structure and a carrying substrate. The light-emitting structure includes a plurality of light-emitting elements and a first positioning mark. The carrying substrate includes a second positioning mark. The light-emitting structure is fixed on the carrying substrate along a direction, and the first positioning mark and the second positioning mark overlap in the direction.

Abstract: An electronic device is provided in the present disclosure. The electronic device includes a substrate, a driving layer, an organic layer and a light emitting layer. The driving layer is disposed on the substrate. The organic layer is disposed on the driving layer, and the organic layer includes a through hole portion. The light emitting unit is disposed on the organic layer. The light emitting unit is electrically connected to the driving layer by a bonding pad. A ratio of an area of the through hole portion overlapped with the bonding pad to and area of the bonding pad is greater than or equal to 0.3 and less than or equal to 3 in a top view direction of the electronic device.

Abstract: A method includes introducing ozone toward a photoresist layer over a substrate. The ozone is decomposed into dioxygen and first atomic oxygen. The dioxygen is decomposed into second atomic oxygen. The first atomic oxygen and the second atomic oxygen are reacted with the photoresist layer. An apparatus that performs the method is also disclosed.

Abstract: An electronic device includes a first substrate, a first conductive layer, a plurality of first electrode pads, a plurality of first light-emitting units, a plurality of first signal pads and a conductive structure. The first conductive layer is disposed on the first substrate. The first electrode pads are disposed on the first conductive layer. The first light-emitting units overlap and are disposed on the first electrode pads. The first light-emitting units are electrically connected to the first electrode pads respectively. The first signal pads are disposed on the first conductive layer and electrically connected to the first conductive layer. The conductive structure is disposed on the first signal pads, and at least two of the first signal pads are electrically connected to each other through the conductive structure.

Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.

Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.

Abstract: A light-emitting module is provided. The light-emitting module includes a light-emitting structure and a carrying substrate. The light-emitting structure includes a plurality of light-emitting elements and a first positioning mark. The carrying substrate includes a second positioning mark. The light-emitting structure is fixed on the carrying substrate along a direction, and the first positioning mark and the second positioning mark overlap in the direction.

Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: Among other things, one or more systems and techniques for removing a photoresist from a semiconductor wafer are provided. The photoresist is formed over the semiconductor wafer for patterning or material deposition. Once completed, the photoresist is removed in a manner that mitigates damage to the semiconductor wafer or structures formed thereon. In an embodiment, trioxygen liquid is supplied to the photoresist. The trioxygen liquid is activated using an activator, such as an ultraviolet activator or a hydrogen peroxide activator, to create activated trioxygen liquid used to remove the photoresist. In an embodiment, the activation of the trioxygen liquid results in free radicals that aid in removing the photoresist. In an embodiment, an initial photoresist strip, such as using a sulfuric acid hydrogen peroxide mixture, is performed to remove a first portion of the photoresist, and the activated trioxygen liquid is used to remove a second portion of the photoresist.

Abstract: A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.

Abstract: Embodiments that relate to mechanisms for cleaning wafers is provided. A method for wafer cleaning includes cleaning wafers by a wet-bench cleaning operation. The method also includes thereafter cleaning each of the wafers by a single-wafer cleaning operation. In addition, a cleaning apparatus for enhancing the performance of the above method is also provided.

Abstract: A semiconductor apparatus for removing a photoresist layer on a substrate includes a platform, a first ultraviolet lamp, and an ozone supplier. The platform is used to support the substrate. The first ultraviolet lamp is used to provide first ultraviolet light. The ozone supplier has at least one first nozzle for introducing ozone toward the substrate through the first ultraviolet light, such that at least a part of the ozone is decomposed by the first ultraviolet light, and at least a part of the decomposed ozone reaches the photoresist layer to react with the photoresist layer. Moreover, a method of removing a photoresist layer on a substrate is also provided.

Abstract: A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.

Abstract: A loading port includes a housing and a plurality of stations defined in the housing configured to receive a front opening universal pod (FOUP). The loading port further includes a connector configured to receive an inert gas. At least one of the plurality of stations is configured to deliver the inert gas to the FOUP to purge an interior of the FOUP of moisture. A system including the loading port and a method of using the system are also described.

Abstract: The present disclosure relates to a method and apparatus for performing a dry plasma procedure, while mitigating internal contamination of a semiconductor substrate. In some embodiments, the apparatus includes a semiconductor processing tool having a dry process stage with one or more dry process elements that perform a dry plasma procedure on a semiconductor substrate received from an input port. A wafer transport system transports the semiconductor substrates from the dry process stage to a wet cleaning stage located downstream of the dry process stage. The wet cleaning stage has one or more wet cleaning elements that perform a wet cleaning procedure to remove contaminants from a surface of the semiconductor substrates before the semiconductor substrate is provided to an output port, thereby improving wafer manufacturing quality.