Abstract: A method of fabricating a semiconductor device includes the following steps. A plurality of doped regions are formed in a substrate. A first dielectric layer is formed on the substrate. A plurality of first contacts and second contacts are formed in the first dielectric layer to be connected to the plurality of doped regions. A memory element is formed on the first dielectric layer. The memory element is electrically connected to the second contact. A second dielectric layer is formed on the first dielectric layer. The second dielectric layer surrounds the memory element. A conductive line is formed in the second dielectric layer. A top surface of the conductive line is at a same level as a top surface of the memory element, and the conductive line is electrically connected to the plurality of first contacts.

Abstract: A surface processing device includes a machining mechanism and a driving mechanism driving the machining mechanism to polish a workpiece. The machining mechanism includes a machining assembly and a first transmission shaft eccentrically coupled with the machining assembly at a first end. The first transmission shaft rotates to bring the machining assembly into revolving around the first transmission shaft. The driving mechanism includes a motor connected to a second end of the first transmission shaft for outputting power to the machining mechanism. The surface processing device provides smooth machining without the noise of a pneumatically-powered tool.