Patents by Inventor Wen-Chaun Chiang

Wen-Chaun Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single transistor random access memory (1T-RAM) cell with dual threshold voltages
    Patent number: 6670664
    Abstract: A random access memory cell and a method for fabrication thereof provide a field effect transistor device laterally adjoining a metal oxide semiconductor capacitor device, each formed within an active region of a semiconductor substrate. Within the random access memory cell and method: (1) a single fluorinated silicon oxide layer of a single thickness serves as both a gate dielectric layer within the field effect transistor device and a capacitor dielectric layer within the metal oxide semiconductor capacitor device; and (2) a channel region within the field effect transistor device has a different threshold voltage adjusting dopant concentration in comparison with a semiconductor plate region within the metal oxide semiconductor capacitor device. The random access memory cell is fabricated with enhanced performance.
    Type: Grant
    Filed: October 22, 2002
    Date of Patent: December 30, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuo-Chyuan Tzeng, Dennis J. Sinitsky, Chen-Jong Wang, Wen-Chaun Chiang