Patents by Inventor Wen-Chein Yu

Wen-Chein Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-quantum-dot semiconductor near-infrared photodetector
    Patent number: 8154007
    Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.
    Type: Grant
    Filed: February 9, 2010
    Date of Patent: April 10, 2012
    Assignee: National Applied Research Laboratories
    Inventors: Jia-Min Shieh, Wen-Chein Yu, Chao-Kei Wang, Bau-Tong Dai, Ci-Ling Pan, Hao-Chung Kuo, Jung-Y. Huang
  • Silicon-Quantum-Dot Semiconductor Near-Infrared Photodetector
    Publication number: 20100213440
    Abstract: A mesoporous silica having adjustable pores is obtained to form a template and thus a three-terminal metal-oxide-semiconductor field-effect transistor (MOSFET) photodetector is obtained. A gate dielectric of a nano-structural silicon-base membrane is used as infrared light absorber in it. Thus, a semiconductor photodetector made of pure silicon having a quantum-dot structure is obtained with excellent near-infrared optoelectronic response.
    Type: Application
    Filed: February 9, 2010
    Publication date: August 26, 2010
    Applicant: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Jia-Min Shieh, Wen-Chein Yu, Chao-Kei Wang, Bau-Tong Dai, Ci-Ling Pan, Hao-Chung Kuo, Jung-Y. Huang