Patents by Inventor Wen-Cheng Cheng
Wen-Cheng Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11914541Abstract: In example implementations, a computing device is provided. The computing device includes an expansion interface, a first device, a second device, and a processor communicatively coupled to the expansion interface. The expansion interface includes a plurality of slots. Two slots of the plurality of slots are controlled by a single reset signal. The first device is connected to a first slot of the two slots and has a feature that is compatible with the single reset signal. The second device is connected to a second slot of the two slots and does not have the feature compatible with the single reset signal. The process is to detect the first device connected to the first slot and the second device connected to the second slot and disable the feature by preventing the first slot and the second slot from receiving the single reset signal.Type: GrantFiled: March 29, 2022Date of Patent: February 27, 2024Assignee: HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.Inventors: Wen Bin Lin, ChiWei Ding, Chun Yi Liu, Shuo-Cheng Cheng, Chao-Wen Cheng
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Patent number: 11557470Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: GrantFiled: July 12, 2022Date of Patent: January 17, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Publication number: 20220351953Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: ApplicationFiled: July 12, 2022Publication date: November 3, 2022Inventors: Chen-Fang CHUNG, Wen-Cheng CHENG, Po Wen YANG, Ming-Jie HE, Yan-Zi LU, Cheng-Yi TENG
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Publication number: 20220298634Abstract: An apparatus for manufacturing a semiconductor device may include a chamber, a chuck provided in the chamber, and a biased power supply physically connected with the chuck. The apparatus may include a target component provided over the chuck and the biased power supply, and a magnetron assembly provided over the target component. The magnetron assembly may include a plurality of outer magnetrons and a plurality of inner magnetrons, and a spacing between each adjacent magnetrons of the plurality of outer magnetrons may be different from a spacing between each adjacent magnetrons of the plurality of inner magnetrons.Type: ApplicationFiled: March 18, 2021Publication date: September 22, 2022Inventors: Yu-Ting TSAI, Chung-Liang CHENG, Wen-Cheng CHENG, Che-Hung LIU, Yu-Cheng SHEN, Chyi-Tsong NI
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Patent number: 11424111Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: GrantFiled: June 25, 2020Date of Patent: August 23, 2022Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Patent number: 11390520Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.Type: GrantFiled: May 25, 2018Date of Patent: July 19, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Tsez-Chong Tsai, Shuen-Liang Tseng, Szu-Hsien Lo, Po-Wen Yang, Ming-Jie He
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Publication number: 20220223391Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the operations of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: ApplicationFiled: March 31, 2022Publication date: July 14, 2022Inventors: Ming-Jie HE, Shawn YANG, Szu-Hsien LO, Shuen-Liang TSENG, Wen-Cheng CHENG, Chen-Fang CHUNG, Chia-Lin HSUEH, Kuo-Pin CHUANG
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Patent number: 11322338Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: GrantFiled: March 29, 2018Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Jie He, Shawn Yang, Szu-Hsien Lo, Shuen-Liang Tseng, Wen-Cheng Cheng, Chen-Fang Chung, Chia-Lin Hsueh, Kuo-Pin Chuang
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Publication number: 20210407777Abstract: A sputtering target assembly, sputtering apparatus, and method, the target assembly including a backing plate having an aperture formed therein; and a target bonded to a front surface of the backing plate. The aperture is disposed on the backing plate such that a first end of the aperture is sealed by a portion of the target that is predicted by a sputtering target erosion profile to have the highest etching rate during a corresponding sputtering process.Type: ApplicationFiled: June 25, 2020Publication date: December 30, 2021Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Po Wen Yang, Ming-Jie He, Yan-Zi Lu, Cheng-Yi Teng
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Publication number: 20190066988Abstract: A method for modifying magnetic field distribution in a deposition chamber is disclosed. The method includes the steps of providing a target magnetic field distribution, removing a first plurality of fixed magnets in the deposition chamber, replacing each of the first plurality of fixed magnets with respective ones of a second plurality of magnets, performing at least one of adjusting a position of at least one of the second plurality of the magnets, and adjusting a size of at least one of the second plurality of magnets, adjusting a magnetic flux of at least one of the second plurality of magnets, measuring the magnetic field distribution in the deposition chamber, and comparing the measured magnetic field distribution in the deposition chamber with the target magnetic field distribution.Type: ApplicationFiled: March 29, 2018Publication date: February 28, 2019Inventors: Ming-Jie HE, Shawn YANG, Szu-Hsien LO, Shuen-Liang TSENG, Wen-Cheng CHENG, Chen-Fang CHUNG, Chia-Lin HSUEH, Kuo-Pin CHUANG
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Publication number: 20190035611Abstract: In an embodiment, a system includes: a chamber; and a magnetic assembly contained within the chamber. The magnetic assembly comprises: an inner magnetic portion comprising first magnets; and an outer magnetic portion comprising second magnets. At least two adjacent magnets, of either the first magnets or the second magnets, have different vertical displacements, and the magnetic assembly is configured to rotate around an axis to generate an electromagnetic field that moves ions toward a target region within the chamber.Type: ApplicationFiled: May 25, 2018Publication date: January 31, 2019Inventors: Chen-Fang Chung, Wen-Cheng Cheng, Tsez-Chong Tsai, Shuen-Liang Tseng, Szu-Hsien Lo, Shawn Yang, Ming-Jie He
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Publication number: 20180060941Abstract: A sectionalized method for a battery manufacturing process includes the steps of: receiving at least one zeroth client purchase order having a zeroth quantity of the battery assembly. If the zeroth quantity is no less than a zeroth predetermined number, or if an accumulated zeroth quantity is no less than the zeroth predetermined number, then a first proposal is generated to propose the client end to build a first production line to assemble cells into battery assemblies.Type: ApplicationFiled: August 30, 2016Publication date: March 1, 2018Inventors: Mike YANG, Wen-Cheng CHENG
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Patent number: 8404135Abstract: A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.Type: GrantFiled: August 26, 2008Date of Patent: March 26, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jian-Bin Chiou, Wen-Cheng Cheng, Wen-Sheng Wu
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Publication number: 20100051581Abstract: A method for cleaning and refurbishing a chamber component includes placing a chamber component having process deposits on an exterior surface in a plasma vapor deposition chamber. The chamber component is bombarded with a plasma comprising Argon for a period of time sufficient to remove the process deposits from the exterior surface of the chamber component.Type: ApplicationFiled: August 26, 2008Publication date: March 4, 2010Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Jian-Bin CHIOU, Wen-Cheng Cheng, Wen-Sheng Wu