Abstract: An apparatus for continuously forming a film through chemical vapor deposition includes a conveyor unit, a depositing unit and a cooling mechanism. The conveyor unit is for conveying a substrate along a moving path. The depositing unit includes at least one deposition chamber disposed to deposit a film-forming material on the substrate. The cooling mechanism includes inlet and outlet cooling units that are disposed oppositely relatively to the deposition chamber, that are communicated fluidly with the deposition chamber and that are controllable to provide a cooling temperature preventing the film-forming material from escaping and scattering away from the inlet and outlet cooling units.

Abstract: A method for forming thin film solar cell materials introducing a first inert gas mixture that includes hydrogen selenide into a chamber at a first pressure value until the chamber reaches a second pressure value and at a first temperature value, wherein the second pressure value is a predefined percentage of the first pressure value. The temperature in the chamber is increased to a second temperature value for a selenization process so that the pressure in the chamber increases to a third pressure value. Residual gas that is generated during the selenization process can be removed from the chamber. A second inert gas mixture that includes hydrogen sulfide is added into the chamber until the chamber reaches a fourth pressure value. The temperature in the chamber is increased to a third temperature value for a sulfurization process. The chamber is cooled after the sulfurization process.

Abstract: Films disclosed herein contain a base or core layer comprising a first polypropylene, a second polypropylene, and a hydrocarbon resin. The base layers may also include other additives as described below. The first polypropylene is preferably a high crystallinity polypropylene having a melting point above about 155° C. or a polypropylene having a polydispersity (Mw/Mn) greater than about 4.0. The second polypropylene may be any conventional polypropylene, preferably having a melting point below about 160° C. and/or a polydispersity less than about 5.0.

Abstract: Films disclosed herein contain a base or core layer comprising a first polypropylene, a second polypropylene, and a hydrocarbon resin. The base layers may also include other additives as described below. The first polypropylene is preferably a high crystallinity polypropylene having a melting point above about 155° C. or a polypropylene having a polydispersity (Mw/Mn) greater than about 4.0. The second polypropylene may be any conventional polypropylene, preferably having a melting point below about 160° C. and/or a polydispersity less than about 5.0.