Abstract: Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping layer over a fin structure; forming an amorphous region within the fin structure while the capping layer is disposed over the fin structure; and performing an annealing process to recrystallize the amorphous region. The capping layer enables the fin structure to retain stress effects induced by forming the amorphous region and/or performing the annealing process.

Abstract: Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping layer over a fin structure; forming an amorphous region within the fin structure while the capping layer is disposed over the fin structure; and performing an annealing process to recrystallize the amorphous region. The capping layer enables the fin structure to retain stress effects induced by forming the amorphous region and/or performing the annealing process.

Abstract: Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping layer over a fin structure; forming an amorphous region within the fin structure while the capping layer is disposed over the fin structure; and performing an annealing process to recrystallize the amorphous region. The capping layer enables the fin structure to retain stress effects induced by forming the amorphous region and/or performing the annealing process.

Abstract: Disclosed are a nailing device and an adjustable nailing depth module used in a gun body of the nailing device. The gun body has a muzzle and a safety device capable of moving reciprocally with respect to the muzzle. The adjustable nailing depth module includes a fixed rod and an adjusting shaft. The fixed rod and muzzle are parallelly fixed to the gun body and extended to a length. The fixed rod has an end section away from the gun body. The adjusting shaft and the end section of the fixed rod are coupled to each other by a screw structure. The adjusting shaft is corresponsive to the safety device. The adjusting shaft can move away from or close to the safety device by the screw structure. The safety device is blocked by the adjusting shaft to restrict the distance of pressing the safety device downwardly towards the muzzle.

Abstract: Stress memorization techniques (SMTs) for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes forming a capping layer over a fin structure; forming an amorphous region within the fin structure while the capping layer is disposed over the fin structure; and performing an annealing process to recrystallize the amorphous region. The capping layer enables the fin structure to retain stress effects induced by forming the amorphous region and/or performing the annealing process.

Abstract: A nail gun includes a body, a valve unit, a nail striking member and a detector. The body has a nail path, an air chamber, and an intake chamber guiding flow of air into the air chamber. The nail striking member is drivable by air pressure in the air chamber for striking a nail in the nail path. The valve unit is operable to switch between unblocking and blocking states to respectively permit and prevent fluid communication between the intake chamber and the air chamber. The detector is connected pivotally to the body, and is contactable with the valve unit such that, when there is no nail in the nail path, the valve unit is controlled by the detector to be in the blocking state.

Abstract: A method for performing a stress memorization technique (SMT) a FinFET and a FinFET having memorized stress effects including multi-planar dislocations are disclosed. An exemplary embodiment includes receiving a FinFET precursor with a substrate, a fin structure on the substrate, an isolation region between the fin structures, and a gate stack over a portion of the fin structure. The gate stack separates a source region of the fin structure from a drain region of the fin structure and creates a gate region between the two. The embodiment also includes forming a stress-memorization technique (SMT) capping layer over at least a portion of each of the fin structures, isolation regions, and the gate stack, performing a pre-amorphization implant on the FinFET precursor by implanting an energetic doping species, performing an annealing process on the FinFET precursor, and removing the SMT capping layer.

Abstract: A method for performing a stress memorization technique (SMT) a FinFET and a FinFET having memorized stress effects including multi-planar dislocations are disclosed. An exemplary embodiment includes receiving a FinFET precursor with a substrate, a fin structure on the substrate, an isolation region between the fin structures, and a gate stack over a portion of the fin structure. The gate stack separates a source region of the fin structure from a drain region of the fin structure and creates a gate region between the two. The embodiment also includes forming a stress-memorization technique (SMT) capping layer over at least a portion of each of the fin structures, isolation regions, and the gate stack, performing a pre-amorphization implant on the FinFET precursor by implanting an energetic doping species, performing an annealing process on the FinFET precursor, and removing the SMT capping layer.

Abstract: A nail gun includes a main body defining an axis, a magazine, a connector body connected to the main body and the magazine, a fixed seat connected to one of the magazine and the connector body and having at least one abutment surface configured to abut against a workplace, and a pressing assembly loosenably fixing the fixed seat to the one of the magazine and the connector body. The pressing assembly is operable between a loosened state and a tightened state. When the pressing assembly is in the loosened state, the fixed seat is rotatable relative to the one of the magazine and the connector body such that an angle of the abutment surface of the fixed seat relative to the axis is selectively positionable.

Abstract: A nailer includes a base seat and at least one abutment member. The base seat has at least one engaging structure. The abutment member has at least two engaging portions that are spaced apart from each other, and a connecting portion that is connected between the engaging portions. The engaging structure engages detachably one of the engaging portions. Each of the engaging portions has an engaging surface that is connected to the connecting portion and that abuts against the engaging structure. The other one of the engaging portions further has an abutment surface that is opposite to the engaging surface thereof, and that is for abutting against the object.

Abstract: A nail gun includes a body, a valve unit, a nail striking member and a detector. The body has a nail path, an air chamber, and an intake chamber guiding flow of air into the air chamber. The nail striking member is drivable by air pressure in the air chamber for striking a nail in the nail path. The valve unit is operable to switch between unblocking and blocking states to respectively permit and prevent fluid communication between the intake chamber and the air chamber. The detector is connected pivotally to the body, and is contactable with the valve unit such that, when there is no nail in the nail path, the valve unit is controlled by the detector to be in the blocking state.

Abstract: A method for performing a stress memorization technique (SMT) a FinFET and a FinFET having memorized stress effects including multi-planar dislocations are disclosed. An exemplary embodiment includes receiving a FinFET precursor with a substrate, a fin structure on the substrate, an isolation region between the fin structures, and a gate stack over a portion of the fin structure. The gate stack separates a source region of the fin structure from a drain region of the fin structure and creates a gate region between the two. The embodiment also includes forming a stress-memorization technique (SMT) capping layer over at least a portion of each of the fin structures, isolation regions, and the gate stack, performing a pre-amorphization implant on the FinFET precursor by implanting an energetic doping species, performing an annealing process on the FinFET precursor, and removing the SMT capping layer.