Abstract: A containment apparatus for battery tray rack includes a pressing module, a securing module, and a controller. In response to that the containment apparatus is to form the containment on the battery tray rack, the controller controls the pressing module to apply a compressive force, so that the battery tray rack withstands a clamping pressure, and the controller controls the securing module to lock the battery tray rack to maintain the clamping pressure. In response to that the containment apparatus is to release the containment from the battery tray rack, the controller controls the pressing module to apply the compressive force, and the controller controls the securing module to unlock the battery tray rack, and then the controller controls the pressing module to cancel the compressive force.

Abstract: A waste liquid-crystalline glass recycling system includes a liquid-crystalline glass film removing module and a liquid-crystalline glass separation module connected with the liquid-crystalline glass film removing module. The liquid-crystalline glass film removing module includes a crushing device and a film removal device. The crushing device is configured to crush a liquid crystal panel. The film removal device is connected with the crushing device, and is configured to separate the liquid crystal panel into a glass-liquid crystal mixture and optical film debris. The liquid-crystalline glass separation module is connected with the liquid-crystalline glass film removing module, and is configured to separate the glass-liquid crystal mixture into glass sand and a liquid crystal mixture by using a solvent, in which the liquid crystal mixture includes the solvent.

Abstract: Image sensors and methods for forming the same are provided. A semiconductor device according to the present disclosure includes a semiconductor layer, a plurality of metal isolation features disposed in the semiconductor layer, a metal grid disposed directly over the plurality of metal isolation features, and a plurality of microlens features disposed over the metal grid.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first fin structure and a second fin structure over a substrate. The method includes forming a dielectric layer over the substrate, the first fin structure, and the second fin structure. The method includes forming a first work function layer in the first trench and the second trench. The method includes forming a first mask layer over the first work function layer in the first trench. The method includes removing the first work function layer exposed by the first mask layer. The method includes removing the first mask layer. The method includes forming a first gate electrode in the first trench and a second gate electrode in the second trench. The method includes forming a first hard mask layer in the first trench and a second hard mask layer in the second trench.

Abstract: The present invention discloses a regulator. The regulator includes a bias voltage generating circuit and a flipped voltage follower (FVF), wherein the bias voltage generating circuit is configured to generate a bias voltage, and the FVF is configured to generate an output voltage according to the bias voltage and a supply voltage. The FVF includes a first P-type transistor and a first N-type transistor. The P-type transistor is configured to receive the bias voltage via a gate electrode of the P-type transistor, to generate the output voltage on a source electrode of the P-type transistor. A drain electrode of the first N-type transistor is connected to the supply voltage, a source electrode of the first N-type transistor is connected to the source electrode of the first P-type transistor, and a gate electrode of the first N-type transistor receives a driving signal for compensating the output voltage.

Abstract: A method of making a semiconductor device includes etching an insulating layer to form a first opening and a second opening. The method further includes depositing a conductive material in the first opening. The method further includes performing a surface modification process on the conductive material. The method further includes depositing, after the surface modification process, a first liner layer in the second opening, wherein the first liner layer extends over the conductive material and the insulating layer. The method further includes depositing a conductive fill over the first liner layer, wherein the conductive fill includes a different material from the conductive material.

Abstract: A semiconductor package device is provided. The semiconductor package device includes a chip and a redistribution layer disposed on the chip and electrically connected to the chip. The redistribution layer includes a plurality of first metal lines and a plurality of second metal lines, wherein at least one of the second metal lines is disposed between two adjacent first metal lines. The included angle between the at least one of the second metal lines and the two adjacent first metal lines is greater than or equal to 0 degrees and less than or equal to 10 degrees. The first width of one of the two adjacent first metal lines is greater than the second width of the at least one of the second metal lines.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

Abstract: An image processing method includes following operations: receiving, by a processor, an input image from a camera; performing, by the processor, a top-view calibration process to generate a top-view calibrated image according to the input image; performing, by the processor, an object extraction process on the top-view calibrated image to generate at least one target object frame; performing, by the processer, a centering process on the at least one target object frame to generate a centered image; and outputting, by the processor, the centered image for a display panel to display.

Abstract: A light-emitting diode (LED) circuit with a parallel sequence function is connected to a power wire in parallel. The LED circuit includes a sequence circuit. In a sequence mode, a first specific voltage is generated by receiving a resistance of the power wire and a pulse cluster with a specific frequency is received. The sequence circuit uses the first specific voltage and the pulse cluster to determine a value, and then sets the value to a sequence number of the LED circuit.

Abstract: A wireless communication device and a moving method thereof are provided. The moving method is adapted for the wireless communication device moving in a zone. While moving in the zone, a wireless signal status of a signal source device is measured. The zone is divided into multiple sub-blocks, and a spatial weight parameter corresponding to each of the sub-blocks is determined according to the wireless signal state of the signal source device. In response to a user equipment being connected to the wireless communication device, a preferred sub-block is selected from the sub-blocks according to user context information of the user equipment and the spatial weight parameter corresponding to each of the sub-blocks. The wireless communication device moves into the preferred sub-block to perform wireless communication with the signal source device and the user equipment within the preferred sub-block.

Abstract: An optical element driving mechanism is provided and includes a fixed assembly, a movable assembly, a driving assembly and a stopping assembly. The fixed assembly has a main axis. The movable assembly is configured to connect an optical element, and the movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly. The stopping assembly is configured to limit the movement of the movable assembly relative to the fixed assembly within a range of motion.

Abstract: A method of manufacturing an image sensor structure includes forming an isolation structure in a substrate to divide the substrate into a first region and a second region, forming a first light sensing region in the first region and a second light sensing region in the second region, forming a first gate structure over the first light sensing region and a second gate structure over the second light sensing region, forming gate spacers on sidewalls of the first and second gate structures, and depositing a blocking layer on sidewalls of the gate spacers. The blocking layer has an opening positioned between the first and second gate structures. A source/drain structure is formed directly under the opening in the blocking layer. The method also includes forming an interlayer dielectric layer over the first and second gate structures and the blocking layer.

Abstract: A semiconductor device includes a first region and a second region, and the second region surrounds the first region. The semiconductor device includes at least one electronic unit, a redistribution structure, a plurality of first pads, and a plurality of second pads. The redistribution structure may be electrically connected to at least one electronic unit. A plurality of first pads are arranged on the redistribution structure and correspondingly to the first region. There is a first pitch between two adjacent first pads. A plurality of second pads are arranged on the redistribution structure and correspondingly to the second region. There is a second pitch between two adjacent second pads, so that the first pitch is smaller than the second pitch.

Abstract: In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.

Abstract: A semiconductor device and a semiconductor manufacturing method thereof are provided. The semiconductor manufacturing method includes the following streps. A first semiconductor element with a first bonding film is formed. The first bonding film is formed on a first side of the first semiconductor element. The first semiconductor element and the first bonding film form a taper structure. The first bonding film forms a wide portion of the taper structure. The first semiconductor element forms a narrow portion of the taper structure. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film. An oxide layer is filled to surround the first semiconductor element and the first bonding film.

Abstract: A wireless power transmission device includes a transmission device and a control device. The control device generates a driving signal to the transmission device in a first soft-start period, so as to drive the transmission device. The control device measures an energy message generated by the transmission device to generate a measurement result in a measurement period, and calculates a signal parameter according to the measurement result. The control device accordingly generates a carrier signal according to the signal parameter obtained by the measurement period in a second soft-start period. In a transmission period, the carrier signal is transmitted to the wireless power-receiving device through the transmission device. The energy message is generated by the transmission device in response to a distance between the transmission device and the wireless power-receiving device.

Abstract: A semiconductor manufacturing method is provided. The semiconductor manufacturing method includes the following steps. A first semiconductor element with a bonding film and a first stressing film is formed. The first bonding film and the first stressing film are formed on two opposite sides of the first semiconductor element. The first stressing film makes the first bonding film to have a first convex surface. A second semiconductor element with a second bonding film is formed. The second bonding film is formed on one side of the second semiconductor element. The first semiconductor element and the second semiconductor element are bonded by bonding the first bonding film and the second bonding film.

Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.