Abstract: Provided are a semiconductor device and a method for manufacturing the same, and a semiconductor package. The semiconductor device includes a die stack and a cap substrate. The die stack includes a first die, second dies stacked on the first die, and a third die stacked on the second dies. The first die includes first through semiconductor vias. Each of the second dies include second through semiconductor vias. The third die includes third through semiconductor vias. The cap substrate is disposed on the third die of the die stack. A sum of a thickness of the third die and a thickness of the cap substrate ranges from about 50 ?m to about 80 ?m.

Abstract: A method includes bonding a first wafer to a second wafer, with a first plurality of dielectric layers in the first wafer and a second plurality of dielectric layers in the second wafer bonded between a first substrate of the first wafer and a second substrate in the second wafer. A first opening is formed in the first substrate, and the first plurality of dielectric layers and the second wafer are etched through the first opening to form a second opening. A metal pad in the second plurality of dielectric layers is exposed to the second opening. A conductive plug is formed extending into the first and the second openings.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

Abstract: Disclosed is a method for preparing a granulated inorganic adsorbent for radionuclides including slurry forming, solidification, drying and hardening, granulation, and washing steps: blending a dihydrogen phosphate, a powdered inorganic adsorbent raw material and a setting time regulator in water to form a slurry; adding sintered magnesia into the slurry, and blending the mixture to form a solidified slurry; setting the solidified slurry on a disk member, and naturally drying to hardening in a specific temperature range to form a hardened solid material; smashing the hardened solid material and performing vibration sieving by using a screen to obtain a granulated inorganic adsorbent for radionuclides containing residual reagents; washing the granulated inorganic adsorbent for radionuclides containing residual reagents with water, to remove the residual reagents to complete preparation, where the adsorption capacity of the granulated inorganic adsorbent for radionuclides thus prepared is in the range of 0.

Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

Abstract: Disclosed is a method for preparing a granulated inorganic adsorbent for radionuclides including slurry forming, solidification, drying and hardening, granulation, and washing steps: blending a dihydrogen phosphate, a powdered inorganic adsorbent raw material and a setting time regulator in water to form a slurry; adding sintered magnesia into the slurry, and blending the mixture to form a solidified slurry; setting the solidified slurry on a disk member, and naturally drying to hardening in a specific temperature range to form a hardened solid material; smashing the hardened solid material and performing vibration sieving by using a screen to obtain a granulated inorganic adsorbent for radionuclides containing residual reagents; washing the granulated inorganic adsorbent for radionuclides containing residual reagents with water, to remove the residual reagents to complete preparation, where the adsorption capacity of the granulated inorganic adsorbent for radionuclides thus prepared is in the range of 0.

Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

Abstract: A driving unit for a caulking gun includes at least two push portions respectively located on two respective rear ends of at least two tubes of a dual-tube unit so as to push material in the at least two tubes toward an outlet on a front end of the dual-tube unit. At least one connection portion is connected between the at least two push portions and a blade is formed on the front end of the at least one connection portion. The blade cuts two adjacent walls of the dual-tube unit so that the at least two push portions are moved forward when the driving unit is pushed forward. The materials in the at least two tubes are mixed and quickly solidified.

Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.

Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.

Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.

Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.

Abstract: A double component container is revealed. The double component container includes a main material tube and a subsidiary material tube. A discharge pipe part is formed on a front end of the main material tube and a plurality of positioning ribs is disposed projectingly around an inner wall of the discharge pipe part while those positioning ribs form a ring hole that is inserted by a discharge pipe part of the subsidiary material tube. The subsidiary material tube includes a plurality of sleeves sleeved with one another and connected with the discharge pipe part. Thereby in use, the main material tube and the subsidiary material tube respectively are filled with an adhesive and a hardener and then are pressed by a push out rod of an adhesive dispenser so as to push out the adhesive mixed with the hardener. Thus fast curing of the adhesive is achieved.