Patents by Inventor Wen-Chi Tsai

Wen-Chi Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9653594
    Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: May 16, 2017
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
  • Patent number: 9480965
    Abstract: Disclosed is a method for preparing a granulated inorganic adsorbent for radionuclides including slurry forming, solidification, drying and hardening, granulation, and washing steps: blending a dihydrogen phosphate, a powdered inorganic adsorbent raw material and a setting time regulator in water to form a slurry; adding sintered magnesia into the slurry, and blending the mixture to form a solidified slurry; setting the solidified slurry on a disk member, and naturally drying to hardening in a specific temperature range to form a hardened solid material; smashing the hardened solid material and performing vibration sieving by using a screen to obtain a granulated inorganic adsorbent for radionuclides containing residual reagents; washing the granulated inorganic adsorbent for radionuclides containing residual reagents with water, to remove the residual reagents to complete preparation, where the adsorption capacity of the granulated inorganic adsorbent for radionuclides thus prepared is in the range of 0.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: November 1, 2016
    Assignee: INSTITUTE OF NUCLEAR ENERGY RESEARCH ATOMIC ENERGY COUNCIL, EXECUTIVE YUAN
    Inventors: Li-Ching Chuang, Chi-Hung Liao, Jen-Chieh Chung, Kou-Min Lin, Sheng-Wei Chiang, Kuang-Li Chien, Zhe-Cheng Hu, Wen-Chi Tsai
  • Publication number: 20160163847
    Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
    Type: Application
    Filed: February 1, 2016
    Publication date: June 9, 2016
    Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
  • Publication number: 20160067672
    Abstract: Disclosed is a method for preparing a granulated inorganic adsorbent for radionuclides including slurry forming, solidification, drying and hardening, granulation, and washing steps: blending a dihydrogen phosphate, a powdered inorganic adsorbent raw material and a setting time regulator in water to form a slurry; adding sintered magnesia into the slurry, and blending the mixture to form a solidified slurry; setting the solidified slurry on a disk member, and naturally drying to hardening in a specific temperature range to form a hardened solid material; smashing the hardened solid material and performing vibration sieving by using a screen to obtain a granulated inorganic adsorbent for radionuclides containing residual reagents; washing the granulated inorganic adsorbent for radionuclides containing residual reagents with water, to remove the residual reagents to complete preparation, where the adsorption capacity of the granulated inorganic adsorbent for radionuclides thus prepared is in the range of 0.
    Type: Application
    Filed: October 30, 2014
    Publication date: March 10, 2016
    Inventors: LI-CHING CHUANG, CHI-HUNG LIAO, JEN-CHIEH CHUNG, KOU-MIN LIN, SHENG-WEI CHIANG, KUANG-LI CHIEN, ZHE-CHENG HU, WEN-CHI TSAI
  • Patent number: 9252019
    Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: February 2, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
  • Publication number: 20140203042
    Abstract: A driving unit for a caulking gun includes at least two push portions respectively located on two respective rear ends of at least two tubes of a dual-tube unit so as to push material in the at least two tubes toward an outlet on a front end of the dual-tube unit. At least one connection portion is connected between the at least two push portions and a blade is formed on the front end of the at least one connection portion. The blade cuts two adjacent walls of the dual-tube unit so that the at least two push portions are moved forward when the driving unit is pushed forward. The materials in the at least two tubes are mixed and quickly solidified.
    Type: Application
    Filed: January 23, 2013
    Publication date: July 24, 2014
    Applicant: GOOD USE HARDWARE CO., LTD.
    Inventor: WEN-CHI TSAI
  • Patent number: 8536010
    Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
    Type: Grant
    Filed: October 5, 2012
    Date of Patent: September 17, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Nieh, Hung-Chang Hsu, Wen-Chi Tsai, Mei-Yun Wang, Chii-Ming Wu, Wei-Jung Lin, Chih-Wei Chang
  • Publication number: 20130049219
    Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.
    Type: Application
    Filed: August 31, 2011
    Publication date: February 28, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-ta Lei
  • Patent number: 8304319
    Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
    Type: Grant
    Filed: July 14, 2010
    Date of Patent: November 6, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chun-Wen Nieh, Hung-Chang Hsu, Wen-Chi Tsai, Mei-Yun Wang, Chii-Ming Wu, Wei-Jung Lin, Chih-Wei Chang
  • Publication number: 20120012903
    Abstract: Methods for fabricating a semiconductor device are disclosed. A metal-rich silicide and/or a mono-silicide is formed on source/drain (S/D) regions. A millisecond anneal is provided to the metal-rich silicide and/or the mono-silicide to form a di-silicide with limited spikes at the interface between the silicide and substrate. The di-silicide has an additive which can lower the electron Schottky barrier height.
    Type: Application
    Filed: July 14, 2010
    Publication date: January 19, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Wen NIEH, Hung-Chang HSU, Wen-Chi TSAI, Mei-Yun WANG, Chii-Ming WU, Wei-Jung LIN, Chih-Wei CHANG
  • Publication number: 20100155424
    Abstract: A double component container is revealed. The double component container includes a main material tube and a subsidiary material tube. A discharge pipe part is formed on a front end of the main material tube and a plurality of positioning ribs is disposed projectingly around an inner wall of the discharge pipe part while those positioning ribs form a ring hole that is inserted by a discharge pipe part of the subsidiary material tube. The subsidiary material tube includes a plurality of sleeves sleeved with one another and connected with the discharge pipe part. Thereby in use, the main material tube and the subsidiary material tube respectively are filled with an adhesive and a hardener and then are pressed by a push out rod of an adhesive dispenser so as to push out the adhesive mixed with the hardener. Thus fast curing of the adhesive is achieved.
    Type: Application
    Filed: November 2, 2009
    Publication date: June 24, 2010
    Inventor: Wen-Chi Tsai