Abstract: Various embodiments of the present disclosure are directed towards an imaging device including a first image sensor element and a second image sensor element respectively comprising a pixel unit disposed within a semiconductor substrate. The first image sensor element is adjacent to the second image sensor element. A first micro-lens overlies the first image sensor element and is laterally shifted from a center of the pixel unit of the first image sensor element by a first lens shift amount. A second micro-lens overlies the second image sensor element and is laterally shifted from a center of the pixel unit of the second image sensor element by a second lens shift amount different from the first lens shift amount.

Abstract: In some embodiments, an image sensor is provided. The image sensor includes a photodetector disposed in a semiconductor substrate. A wave guide filter having a substantially planar upper surface is disposed over the photodetector. The wave guide filter includes a light filter disposed in a light filter grid structure. The light filter includes a first material that is translucent and has a first refractive index. The light filter grid structure includes a second material that is translucent and has a second refractive index less than the first refractive index.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip. The integrated chip includes a first photodetector disposed in a first pixel region of a semiconductor substrate and a second photodetector disposed in a second pixel region of the semiconductor substrate. The second photodetector is laterally separated from the first photodetector. A first diffuser is disposed along a back-side of the semiconductor substrate and over the first photodetector. A second diffuser is disposed along the back-side of the semiconductor substrate and over the second photodetector. A first midline of the first pixel region and a second midline of the second pixel region are both disposed laterally between the first diffuser and the second diffuser.

Abstract: The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a planarization layer disposed on the first substrate and located in the display region and the peripheral region; and an organic passivation layer disposed on the first substrate, covering the planarization layer and located in the display region and the peripheral region; wherein the planarization layer further comprises a first region planarization layer located in the display region, and a second region planarization layer located in the peripheral region, the first region planarization layer is formed with a first sidewall in a boundary region between the display region and the peripheral region, and a height of the first sidewall is greater than a height of the first region planarization layer.

Abstract: The invention discloses a display panel having a display region and a wire out region on one side of the display region, comprising: a first substrate including a main body part and a glue blocking part connected to the main body part, a thickness of the main body part being different from a thickness of the glue blocking part; a second substrate opposite to the first substrate; and a sealant arranged between the first substrate and the second substrate, and located between the display region and the wire out region, wherein the glue blocking part is located on one side of the sealant close to the wire out region. The thickness of the main body part of the first substrate in the display panel of the invention is different from the thickness of the glue blocking part, and before curing, the sealant does not spill into the wire out region due to obstruction action of the glue blocking part, thereby not affecting a peeling process of the panel after cutting.

Abstract: The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a planarization layer disposed on the first substrate and located in the display region and the peripheral region; and an organic passivation layer disposed on the first substrate, covering the planarization layer and located in the display region and the peripheral region; wherein the planarization layer further comprises a first region planarization layer located in the display region, and a second region planarization layer located in the peripheral region, the first region planarization layer is formed with a first sidewall in a boundary region between the display region and the peripheral region, and a height of the first sidewall is greater than a height of the first region planarization layer.

Abstract: The invention discloses a display panel having a display region and a wire out region on one side of the display region, comprising: a first substrate including a main body part and a glue blocking part connected to the main body part, a thickness of the main body part being different from a thickness of the glue blocking part; a second substrate opposite to the first substrate; and a sealant arranged between the first substrate and the second substrate, and located between the display region and the wire out region, wherein the glue blocking part is located on one side of the sealant close to the wire out region. The thickness of the main body part of the first substrate in the display panel of the invention is different from the thickness of the glue blocking part, and before curing, the sealant does not spill into the wire out region due to obstruction action of the glue blocking part, thereby not affecting a peeling process of the panel after cutting.

Abstract: A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.

Abstract: A Micro-Electro-Mechanical-System (MEMS) microphone device includes a substrate, a MEMS microphone thin film, oxide layer. The substrate has a first penetrating portion. The MEMS microphone thin film is above the substrate and covered the first penetrating portion defining a first cavity. The MEMS microphone thin film includes an elastic portion and a connection portion. The elastic portion has a plurality of first slots arranged along the edge of the elastic portion and sequentially and separately. The first slots are penetrated two surface of the elastic portion, the surface are opposite each other. The connection portion is connected to the elastic portion and contacted the substrate. The oxide layer has a second penetrating portion. The oxide layer is on the MEMS microphone thin film and contacted the connection portion. A part of the MEMS microphone thin film is exposed through the second penetrating portion.

Abstract: A tunable chemical sensing device includes a sensing unit, a plurality of first pads, a value reading circuit and a plurality of second pads. The sensing unit has a first impedance component and a plurality of second impedance components. The first impedance component and the second impedance components respectively have a first terminal and a second terminal. The second impedance components respectively have a different impedance value. The first pads are respectively coupled to the corresponding first and second terminals. The value reading circuit has a first input terminal, a second input terminal and an output terminal. The second pads are respectively coupled to the corresponding first input terminal, second input terminal and output terminal. A coupling relationship between the first pads and the second pads is adjusted to tune an impedance value of the sensing unit.

Abstract: A microelectromechanical system (MEMS) gas sensing device includes a substrate, an oxide layer, a heating unit, a thermal-conductive metal layer, a passivation layer, and a sensor layer. The substrate includes a first cavity. The oxide layer has a first surface and a second surface opposite to the first surface, is on the substrate, and covers on the first cavity. The first surface contacts the substrate. The heating unit is in the oxide layer and adjacent to the first surface of the oxide layer. The thermal-conductive metal layer is between the heating unit and the second surface of the oxide layer. The passivation layer is on the second surface of the oxide layer and includes at least one via. The sensor layer is on the passivation layer and electrically connected to the thermal-conductive metal layer through the at least one via.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Abstract: A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has a third side and a fourth side opposite to the third side. The supporter includes a plurality of first confined layers and a plurality of second confined layers. These first confined layers and these second confined layers are overlapped with each other. The second side and the third side are adjacent to each other. The solder is located between the second side and the third side. The solder is also located at the first side and the fourth side. The solder is utilized to combine the pillar and the supporter. The solder also isolates the pillar and the supporter.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Abstract: A signal boosting apparatus and a method of boosting signals applied in the MEMS are disclosed. The signal boosting apparatus includes a substrate, an oxide layer, and a signal transmission layer. The substrate has a doped region. The doped region has a plurality of conductive carriers. These conductive carriers have the same polarity as an electronic signal. The oxide layer is located on the substrate, and the signal transmission layer is located on the oxide layer. The signal transmission layer can receive and boost the electronic signal.

Abstract: A MEMS apparatus includes a pillar, a supporter, and a solder. The pillar has a first side and a second side opposite to the first side. The supporter supports the pillar. The supporter is adjacent to the pillar, but the supporter is not connected to the pillar. The supporter has a third side and a fourth side opposite to the third side. The supporter includes a plurality of first confined layers and a plurality of second confined layers. These first confined layers and these second confined layers are overlapped with each other. The second side and the third side are adjacent to each other. The solder is located between the second side and the third side. The solder is also located at the first side and the fourth side. The solder is utilized to combine the pillar and the supporter. The solder also isolates the pillar and the supporter.

Abstract: An alternative sensing circuit for a micro-electro-mechanical system (MEMS) microphone and a sensing method thereof are provided. The sensing circuit reads out output signals of an MEMS electret microphone or an MEMS condenser microphone. In considering different operating requirements of the different MEMS microphones, for example, low power consumption for the MEMS electret condenser microphone or high sensitivity for the MEMS condenser microphone, the manner of using two kinds of MEMS microphone sensing components in one circuit can significantly increase the flexibility of using the MEMS microphone and can be applied to the application or design of a condenser sensing component.

Abstract: An alternative sensing circuit for a micro-electro-mechanical system (MEMS) microphone and a sensing method thereof are provided. The sensing circuit reads out output signals of an MEMS electret microphone or an MEMS condenser microphone. In considering different operating requirements of the different MEMS microphones, for example, low power consumption for the MEMS electret condenser microphone or high sensitivity for the MEMS condenser microphone, the manner of using two kinds of MEMS microphone sensing components in one circuit can significantly increase the flexibility of using the MEMS microphone and can be applied to the application or design of a condenser sensing component.