Abstract: This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is ?13.

Abstract: An input device includes a structural frame, a touch pad, a piezoelectric sheet fixed on the touch pad, and a controller electrically connected to the touch pad and the piezoelectric sheet. The touch pad has a first side, a second side opposite to the first side, and a touch-sensitive surface that has a button area located at the second side. The touch pad can be elastically deflected to move the second side relative to the structural frame. The piezoelectric sheet generates a voltage when the touch pad is elastically deflected. When determining that a press is performed on the button area and the voltage is larger than or equal to a corresponding predetermined value, the controller sends out a trigger signal. An electronic apparatus with the input device includes a display screen and a processor. The processor receives the trigger signal to control the display screen to display images.

Abstract: An input device includes a structural frame, a touch pad, a piezoelectric sheet fixed on the touch pad, and a controller electrically connected to the touch pad and the piezoelectric sheet. The touch pad has a first side, a second side opposite to the first side, and a touch-sensitive surface that has a button area located at the second side. The touch pad can be elastically deflected to move the second side relative to the structural frame. The piezoelectric sheet generates a voltage when the touch pad is elastically deflected. When determining that a press is performed on the button area and the voltage is larger than or equal to a corresponding predetermined value, the controller sends out a trigger signal. An electronic apparatus with the input device includes a display screen and a processor. The processor receives the trigger signal to control the display screen to display images.

Abstract: A co-constructed power generation device comprises a shell member, a first power generation group and a second power generation group, wherein the first power generation group is disposed in the shell member and generates shake-induced power, and the second power generation group is disposed in the shell member and generates rotation-induced power.

Abstract: A vibration suppressing apparatus and a vibration suppressing method thereof are provided. The vibration amplitude, vibration frequency, and vibration phase of a vibration suppressing unit are adjusted in real-time according to the vibration amplitude, vibration frequency and vibration phase of a vibration source.

Abstract: A co-constructed power generation device comprises a shell member, a first power generation group and a second power generation group, wherein the first power generation group is disposed in the shell member and generates shake-induced power, and the second power generation group is disposed in the shell member and generates rotation-induced power.

Abstract: A vibration suppressing apparatus and a vibration suppressing method thereof are provided. The vibration amplitude, vibration frequency, and vibration phase of a vibration suppressing unit are adjusted in real-time according to the vibration amplitude, vibration frequency and vibration phase of a vibration source.

Abstract: A vibration suppressing apparatus and a vibration suppressing method thereof are provided. The vibration amplitude, vibration frequency, and vibration phase of a vibration suppressing unit are adjusted in real-time according to the vibration amplitude, vibration frequency and vibration phase of a vibration source.

Abstract: A portable computer has a base, a platform and a moving assembly. The base has an accommodating space. The platform is movably situated in the accommodating space. The platform has a first position and second position relative to the base. The moving assembly situated in the base has a moving element and a guiding structure. The moving element connects with the platform and moves along the guiding structure within the accommodating space to allow the platform to move between the first position and the second position relative to the base.

Abstract: A portable computer has a base, a platform and a moving assembly. The base has an accommodating space. The platform is movably situated in the accommodating space. The platform has a first position and second position relative to the base. The moving assembly situated in the base has a moving element and a guiding structure. The moving element connects with the platform and moves along the guiding structure within the accommodating space to allow the platform to move between the first position and the second position relative to the base.

Abstract: A force feedback mechanism disposed inside a casing for vibration balance of the casing is disclosed in the present invention. The force feedback mechanism includes an accelerator, a force generator and a controller. The accelerator detects an acceleration parameter of the casing. The force generator respectively generates an effective force at a first direction and a second direction. The first direction is substantially opposite to the second direction. The controller is electrically connected to the accelerator and the force generator. The controller obtains and analyzes absolute value and vector of the acceleration parameter, and drives the force generator to generate the corresponding effective force according to the absolute value and the vector.

Abstract: A light emitting diode structure includes a first type semiconductor layer, an illumination layer, a second type semiconductor layer, a plurality of first light extraction improvement structures and a transparent conductive layer. The illumination layer is disposed on the first type semiconductor layer. The second type semiconductor layer is disposed on the illumination layer, and the refractive index thereof is n1. The first light extraction improvement structures are disposed on the second type semiconductor layer, and the refractive index thereof is n2. The first light extraction improvement structures are spatially separated from each other, and each of them includes a slanted light outgoing surface oblique to the upper surface of the second type semiconductor layer. The transparent conductive layer conformably covers the first light extraction improvement structures and the second type semiconductor layer, and the refractive index thereof is n3, wherein n2>n3.

Abstract: A vibration suppressing apparatus and a vibration suppressing method thereof are provided. The vibration amplitude, vibration frequency, and vibration phase of a vibration suppressing unit are adjusted in real-time according to the vibration amplitude, vibration frequency and vibration phase of a vibration source.

Abstract: A force feedback mechanism disposed inside a casing for vibration balance of the casing is disclosed in the present invention. The force feedback mechanism includes an accelerator, a force generator and a controller. The accelerator detects an acceleration parameter of the casing. The force generator respectively generates an effective force at a first direction and a second direction. The first direction is substantially opposite to the second direction. The controller is electrically connected to the accelerator and the force generator. The controller obtains and analyzes absolute value and vector of the acceleration parameter, and drives the force generator to generate the corresponding effective force according to the absolute value and the vector.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.

Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Abstract: The present invention discloses a method for fabricating a light emitting diode element, which incorporates an epitaxial process with an etching process to etch LED epitaxial layers bottom up and form side-protrudent structures, whereby the LED epitaxial layers have non-rectangular inclines, which can solve the problem of total reflection and promote light-extraction efficiency. Further, the method of the present invention has a simple fabrication process, which can benefit mass production and lower cost.

Abstract: A method for self bonding epitaxy includes forming a passivation layer on a substrate surface of a semiconductor lighting element; etching to form recesses and protrusive portions with the passivation layer located thereon; starting forming epitaxy on the bottom surface of the recesses; filling the recesses with an Epi layer; then covering the protrusive portions and starting self bonding upwards the epitaxy to finish the Epi layer structure. Such a self bonding epitaxy growing technique can prevent cavity generation caused by parameter errors of the epitaxy and reduce defect density, and improve the quality of the Epi layer and increase internal quantum efficiency.