Abstract: Various embodiments of a digit display are provided. In one aspect, a digit display comprises at least one display unit. The at least one digit unit comprises twenty-eight character segments that are arranged in a manner including a quadrilateral, a cross, and four X-shaped arrangements. The quadrilateral is formed by eight of the twenty-eight character segments with two character segments on each of four sides of the quadrilateral. The cross is formed by four of the twenty-eight character segments and dividing the quadrilateral into four quadrants. Each of the four X-shaped arrangements is disposed in a respective one of the four quadrants and formed by respective four of the twenty-eight character segments.

Abstract: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m.lamda./n, where m is a positive integer number, .lamda. is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=.lamda.(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

Abstract: A new transparent conducting oxide (TCO), which can be expressed as AlxGa3-x-yIn5+ySn2-zO16-2z; 0?x<1, 0<y<3, 0?z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2 system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

Abstract: A flip-chip electrode light-emitting element formed by multilayer coatings where a translucent conducting layer and a highly reflective metal layer acts as flip-chip electrode for enhancing the LED luminous efficiency. The flip-chip electrode light-emitting element includes a translucent substrate, a semiconductor die structure attached on the translucent substrate and made of group III nitride compounds, and an intermediate layer adapted to support the inverted semiconductor die structure on a submount. The flip-chip electrode formed by multiplayer coatings includes a current-spreading transparent conducting layer formed on a top side of the second type semiconductor layer, a highly reflective metal layer formed on a top side of the transparent conducting layer, a metallic diffusion barrier layer formed on a top side of the highly reflective metal layer, and a bonding layer electrically coupled to the intermediate layer and formed on a top side of the barrier layer.

Abstract: A method of fabricating light emitting diodes (LED) with a colour purifying diffraction lattice (CPDL) is suggested, the essence of the invention is in the use of the coherent scattering of the light by the CPDL for colour purifying of the light emitted by the LED and enhancement its extraction efficiency, the CPDL is a hexagonal two-dimensional periodical pattern on the surface of the LED structure or an internal interface resulting in the periodical variation in the refractive index with the period d The period of CPDL satisfies the equation d=m?/n, where m is a positive integer number, ? is the wavelength of the light generated by LED, and n is the refraction index of LED structure. The height of the hexagonal islands forming CPDL is h=?(2l+1)/2n, l is a positive integer number or zero. Use of CPDL allows to convert the laterally propagating light into the vertically propagating and simultaneously filter its spectrum.

Abstract: A new transparent conducting oxide (TCO), which can be expressed as AlxGa3?x?yIn5+ySn2?zO16?2z; 0?x<1, 0<y<3, 0?z<2, has been used to improve the brightness and current spreading in GaN base LED process. The optical properties of this system are superior to regular Ni/Au transparent conducting layer in blue-green region, and the new Al2O3—Ga2O3—In2O3—SnO2 system is able to increase the brightness at 1.5˜2.5 time to compare to regular process. Furthermore, the new transparent conducting oxide thin film has the highest conductivity, which is better than the Ni/Au transparent conducting thin film.

Abstract: A method for fabricating a light emitting diode with transparent substrate. The method comprises forming a first type cladding layer on a substrate, forming an active layer on the first type cladding layer, forming a second type cladding layer on the active layer, forming a second type transparent semiconductor layer on the second type cladding layer to serve as the transparent substrate, removing the substrate, and forming a first type contact layer on the surface of the first type cladding layer previously connected to the substrate. The transparent substrate does not absorb the emitted light, thereby the light emitting efficiency is increased by as much as double, and thus the performance of opto-electronic devices is improved.

Abstract: A light emitting diode and manufacturing method thereof. The light emitting diode comprises a n-type semiconductor layer formed on a substrate, an active layer formed on the n-type semiconductor layer, a p-type cladding layer formed on the active layer, and a hydrogen-adsorbing layer formed on the p-type cladding layer. The hydrogen-adsorbing layer adsorbs the hydrogen atoms near the interface to the p-type cladding layer, thereby enhancing the doping concentration of p-type cladding layer, and forming a low-resist ohmic contact by which the performance and reliability of opto-electronic devices is improved.

Abstract: The invention provides a light emitting diode (LED) or other light emitting means such as a laser diode (LD) comprising a light emitting component and scattering optical media such as dielectric phosphor powder (DPP) which absorb a part of light emitted by the light emitting component and emits light of a wavelength that is different from that of the absorbed light. In a preferred embodiment according to the invention, the LED includes a crystalline semiconductor chip serving as the light emitting component. The scattering optical media such as dielectric phosphor powder (DPP) is made of a mixture of phosphor particles and microscopic, nearly spherical dielectric particles with a band gap larger than 3 eV (which do not absorb blue light in the spectrum). The scattering optical media such as DPP can also include phosphor particles, and bubbles (or voids) instead of the dielectric particles. The bubbles of the DPP have a band gap larger than 3 eV which do not absorb blue light in the spectrum.

Abstract: The invention provides a light emitting device with uniform light emission, wherein the light emitting device comprises an alloyed film formed on the p-type semiconductor layer. The alloyed film has a structure of long-range order superlattice, and is formed by annealing a multi-metal layer. The alloyed film has superior thermal conductivity and superior electrical conductivity. Thus, the current is uniformly applied to the entire p-type semiconductor layer, and the light emitting device emits uniform light.

Abstract: The invention provides a light emitting diode (LED) comprising a light emitting component and dielectric phosphor powder (DPP) which absorb a part of light emitted by the light emitting component and emits light of a wavelength that is different from that of the absorbed light. In a preferred embodiment according to the invention, the LED includes a crystalline semiconductor chip serving as the light emitting component. The dielectric phosphor powder is made of a mixture of phosphor particles and microscopic, nearly spherical dielectric particles with a band gap larger than 3 eV (which do not absorb blue light in the spectrum). The DPP can also include phosphor particles, and bubbles (or voids) instead of the dielectric particles. The bubbles of the DPP have a band gap larger than 3 eV which do not absorb blue light in the spectrum. The bubbles can be air bubbles, N2 bubbles, noble gas bubbles. Furthermore, the DPP can also be a mixture of the bubbles, dielectric particles, and the phosphor particles.

Abstract: The invention provides a light emitting diode (LED) or other light emitting means such as a laser diode (LD) comprising a light emitting component and scattering optical media such as dielectric phosphor powder (DPP) which absorb a part of light emitted by the light emitting component and emits light of a wavelength that is different from that of the absorbed light. In a preferred embodiment according to the invention, the LED includes a crystalline semiconductor chip serving as the light emitting component. The scattering optical media such as dielectric phosphor powder (DPP) is made of a mixture of phosphor particles and microscopic, nearly spherical dielectric particles with a band gap larger than 3 eV (which do not absorb blue light in the spectrum). The scattering optical media such as DPP can also include phosphor particles, and bubbles (or voids) instead of the dielectric particles. The bubbles of the DPP have a band gap larger than 3 eV which do not absorb blue light in the spectrum.

Abstract: The invention provides a method for fabricating a light-emitting diode with uniform color temperature, comprising the steps of: forming a plurality of light-emitting diodes on a wafer; obtaining the light emission wavelengths of the light-emitting diodes on the wafer; and forming different doses of phosphor on the corresponding light-emitting diode on the wafer according to the light emission wavelengths of respective light-emitting diodes. Finally, the light-emitting diodes on the wafer emit light with uniform color temperature.