Patents by Inventor Wen-Chien Hsieh

Wen-Chien Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10923809
    Abstract: A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: February 16, 2021
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Liang-Che Chou, Li-Chun Lee, Yu-Chun Hsieh, Mau-Chi Sun, Jui-Hung Lai, Wen-Feng Tsai, Chih-Chien Liu
  • Patent number: 10709255
    Abstract: An inflation identification connector and an air mattress system having the same is provided. The inflation identification connector is insertable into a connection seat of a gas delivery host. The connection seat has a light detection component coupled to a controller disposed in the gas delivery host. The inflation identification connector includes a body and an identification structure. The detection result of the light detection component depends on the identification structure and thus is conducive to identification. Upon its insertion into the connection seat, the inflation identification connector is identified by the gas delivery host, enhancing ease of use and protecting manual operation against mistakes. The gas delivery host is not only applicable to different types of air mattresses but also conducive to streamlined management of the air mattress system and reduction of management costs and risks.
    Type: Grant
    Filed: October 30, 2018
    Date of Patent: July 14, 2020
    Assignee: APEX MEDICAL CORP.
    Inventors: David Huang, Wen-Bin Shen, Ju-Chien Cheng, Ming-Heng Hsieh, Fu-Wei Chen, Chih-Kuang Chang, Yi-Ling Liu, Sheng-Wei Lin, Chung-Yi Lin
  • Patent number: 10636341
    Abstract: A method of processing an image data for an image processing device includes a plurality of steps. The steps include receiving the image data; storing the image data in a frame buffer of the image processing device; performing a signal processing procedure on the image data obtained from the frame buffer, to generate a final display data; restoring the final display data in the frame buffer; and entering a power saving mode after the final display data is restored in the frame buffer. In the power saving mode, the image processing device performs the following steps: turning off the signal processing circuit; and outputting the final display data restored in the frame buffer, to display the final display data.
    Type: Grant
    Filed: October 8, 2018
    Date of Patent: April 28, 2020
    Assignee: NOVATEK Microelectronics Corp.
    Inventors: Chia-Hsin Tung, Yung-Chien Fan, Wen-Kai Hsieh, Shu-Yuan Hsu
  • Publication number: 20200082745
    Abstract: A method of processing an image data for an image processing device includes a plurality of steps. The steps include receiving the image data; storing the image data in a frame buffer of the image processing device; performing a signal processing procedure on the image data obtained from the frame buffer, to generate a final display data; restoring the final display data in the frame buffer; and entering a power saving mode after the final display data is restored in the frame buffer. In the power saving mode, the image processing device performs the following steps: turning off the signal processing circuit; and outputting the final display data restored in the frame buffer, to display the final display data.
    Type: Application
    Filed: October 8, 2018
    Publication date: March 12, 2020
    Inventors: Chia-Hsin Tung, Yung-Chien Fan, Wen-Kai Hsieh, Shu-Yuan Hsu
  • Publication number: 20190305414
    Abstract: A communication apparatus, an electronic apparatus and an antenna adjustment method thereof are provided. The communication apparatus includes an antenna system, a tuning portion and a switch circuit. The antenna system includes at least two antenna units. The tuning portion is disposed between the at least two antenna units and includes at least two branch units. The switch circuit is coupled to the tuning portion. The switch circuit switches a conduction from a first one of the branch units to a second one of the branch units according to a switching signal. The switching signal is related to performances of the antenna system. Accordingly, a dynamic and flexible adjustment mechanism can be provided to increase throughput and improve users' internet experience.
    Type: Application
    Filed: April 2, 2019
    Publication date: October 3, 2019
    Applicant: COMPAL ELECTRONICS, INC.
    Inventors: Liang-Che Chou, Li-Chun Lee, Yu-Chun Hsieh, Mau-Chi Sun, Jui-Hung Lai, Wen-Feng Tsai, Chih-Chien Liu
  • Publication number: 20190214480
    Abstract: A fabricating method of a semiconductor structure includes the following steps. A gate material layer is formed on a semiconductor substrate. A patterned mask layer is formed on the gate material layer. The pattern mask layer includes at least one opening exposing a part of the gate material layer. An impurity treatment is performed to the gate material layer partially covered by the pattern mask layer for forming at least one doped region in the gate material layer. An etching process is performed to remove the gate material layer including the doped region. A dummy gate may be formed by patterning the gate material layer, and the impurity treatment may be performed after the step of forming the dummy gate. The performance of the etching processes for removing the gate material layer and/or the dummy gate may be enhanced, and the gate material residue issue may be solved accordingly.
    Type: Application
    Filed: March 19, 2019
    Publication date: July 11, 2019
    Inventors: Wen-Chien Hsieh, En-Chiuan Liou, Chih-Wei Yang, Yu-Cheng Tung, Po-Wen Su
  • Publication number: 20190142180
    Abstract: An inflation identification connector and an air mattress system having the same is provided. The inflation identification connector is insertable into a connection seat of a gas delivery host. The connection seat has a light detection component coupled to a controller disposed in the gas delivery host. The inflation identification connector includes a body and an identification structure. The detection result of the light detection component depends on the identification structure and thus is conducive to identification. Upon its insertion into the connection seat, the inflation identification connector is identified by the gas delivery host, enhancing ease of use and protecting manual operation against mistakes. The gas delivery host is not only applicable to different types of air mattresses but also conducive to streamlined management of the air mattress system and reduction of management costs and risks.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 16, 2019
    Inventors: DAVID HUANG, WEN-BIN SHEN, JU-CHIEN CHENG, MING-HENG HSIEH, FU-WEI CHEN, CHIH-KUANG CHANG, YI-LING LIU, SHENG-WEI LIN, CHUNG-YI LIN
  • Patent number: 10283616
    Abstract: A fabricating method of a semiconductor structure includes the following steps. A gate material layer is formed on a semiconductor substrate. A patterned mask layer is formed on the gate material layer. The pattern mask layer includes at least one opening exposing a part of the gate material layer. An impurity treatment is performed to the gate material layer partially covered by the pattern mask layer for forming at least one doped region in the gate material layer. An etching process is performed to remove the gate material layer including the doped region. A dummy gate may be formed by patterning the gate material layer, and the impurity treatment may be performed after the step of forming the dummy gate. The performance of the etching processes for removing the gate material layer and/or the dummy gate may be enhanced, and the gate material residue issue may be solved accordingly.
    Type: Grant
    Filed: August 30, 2016
    Date of Patent: May 7, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Wen-Chien Hsieh, En-Chiuan Liou, Chih-Wei Yang, Yu-Cheng Tung, Po-Wen Su
  • Publication number: 20180061963
    Abstract: A fabricating method of a semiconductor structure includes the following steps. A gate material layer is formed on a semiconductor substrate. A patterned mask layer is formed on the gate material layer. The pattern mask layer includes at least one opening exposing a part of the gate material layer. An impurity treatment is performed to the gate material layer partially covered by the pattern mask layer for forming at least one doped region in the gate material layer. An etching process is performed to remove the gate material layer including the doped region. A dummy gate may be formed by patterning the gate material layer, and the impurity treatment may be performed after the step of forming the dummy gate. The performance of the etching processes for removing the gate material layer and/or the dummy gate may be enhanced, and the gate material residue issue may be solved accordingly.
    Type: Application
    Filed: August 30, 2016
    Publication date: March 1, 2018
    Inventors: Wen-Chien Hsieh, En-Chiuan Liou, Chih-Wei Yang, Yu-Cheng Tung, Po-Wen Su
  • Patent number: D774002
    Type: Grant
    Filed: December 10, 2015
    Date of Patent: December 13, 2016
    Inventor: Jack Wen-Chien Hsieh