Abstract: An X-ray device, including a sensor panel and a flexible scintillator structure disposed on the sensor panel, is provided. A manufacturing method of the X-ray device is also provided.

Abstract: An integrated chip including a gate layer. An insulator layer is over the gate layer. A channel structure is over the insulator layer. A pair of source/drains are over the channel structure and laterally spaced apart by a dielectric layer. The channel structure includes a first channel layer between the insulator layer and the pair of source/drains, a second channel layer between the insulator layer and the dielectric layer, and a third channel layer between the second channel layer and the dielectric layer. The first channel layer, the second channel layer, and the third channel layer include different semiconductors.

Abstract: A high-voltage semiconductor device structure is provided. The high-voltage semiconductor device structure includes a semiconductor substrate, a source ring in the semiconductor substrate, and a drain region in the semiconductor substrate. The high-voltage semiconductor device structure also includes a doped ring surrounding sides and a bottom of the source ring and a well region surrounding sides and bottoms of the drain region and the doped ring. The well region has a conductivity type opposite to that of the doped ring. The high-voltage semiconductor device structure further includes a conductor electrically connected to the drain region and extending over and across a periphery of the well region. In addition, the high-voltage semiconductor device structure includes a shielding element ring between the conductor and the semiconductor substrate. The shielding element ring extends over and across the periphery of the well region.

Abstract: A method for predicting clinical severity of a neurological disorder includes steps of: a) identifying, according to a magnetic resonance imaging (MRI) image of a brain, brain image regions each of which contains a respective portion of diffusion index values of a diffusion index, which results from image processing performed on the MRI image; b) for one of the brain image regions, calculating a characteristic parameter based on the respective portion of the diffusion index values; and c) calculating a severity score that represents the clinical severity of the neurological disorder of the brain based on the characteristic parameter of the one of the brain image regions via a prediction model associated with the neurological disorder.

Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

Abstract: A backlight module is provided. The backlight module includes a substrate having a substrate surface, a conductive layer disposed on the substrate surface, a plurality of LED chips disposed on and electrically connected to the conductive layer, a light-permeable layer having a light-permeable surface away from the substrate surface, and a pattern layer disposed on the light-permeable surface and having a plurality of first patterns corresponding to and respectively located above the plurality of LED chips. Wherein, each first pattern has a maximum width. A maximum width of one first pattern satisfies the following formula: WP?2n(TE?TL)(1?1/n2)1/2+WL; wherein WP is the maximum width of one first pattern, n is a refractivity of the light-permeable layer, TE is a thickness of the light-permeable layer, TL is a thickness of the LED chip, WL is a maximum width of LED chip corresponding to the first pattern.

Abstract: A coupling for a reflectivity-measuring device connects a first shaft of a reflectivity-measuring device with a second shaft of a motor. The first shaft inserts into a first hole of a main portion of the coupling, and the second shaft inserts into a second hole of the main portion. The-main portion further comprises a third hole communicating with the first hole, a fourth hole communicating with the second hole; a first non-skid member and a second non-skid member. The first non-skid member inserts into the third hole and abuts the first shaft located inside the first hole. The second non-skid member inserts into the fourth hole and abuts the second shaft located inside the second hole.

Abstract: A coupling for a reflectivity-measuring device is provided. The coupling connects a first shaft of a reflectivity-measuring device with a second shaft of a motor. The first shaft inserts into a first hole of a main portion of the coupling, and the second shaft inserts into a second hole of the main portion. The main portion further comprises a third hole communicating with the first hole, a fourth hole communicating with the second hole, a first non-skid member and a second non-skid member. The first non-skid member inserts into the third hole and abuts the first shaft located inside the first hole. The second non-skid member inserts into the fourth hole and abuts the second shaft located inside the second hole.