Abstract: A power consumption reduction method can include defining y operation scenarios according to x types of extracted information, generating z power profiles each used for controlling power provided to a subset of a plurality of processors, assigning the z power profiles to the y operation scenarios in a machine learning model, collecting to-be-evaluated information by the plurality of processors, comparing the to-be-evaluated information with the x types of extracted information to find a most similar type of extracted information, using the machine learning model to select an optimal power profile from the z power profiles according to the most similar type of extracted information, and applying the optimal power profile to control the power provided to the subset of the plurality of processors. The subset of the plurality of processors are of the same type of processor. x, y and z can be an integer larger than zero.

Abstract: A temperature sensing device includes a substrate, a first reflective module, a first window cover, and a dual thermopile sensor. The first reflective module is disposed on the substrate, including a first mirror chamber with a narrow field of view (FOV), and the first reflective module focuses a thermal radiation from measured object to a first image plane in the first mirror chamber. The first window cover is disposed on the first reflective module, and the first window cover allows a selected band of the thermal radiation to pass through. The dual thermopile sensor is disposed on the substrate and located in the first mirror chamber, and the dual thermopile sensor senses a temperature data from the first image plane. Additional second reflective module, LED source plus pin hole with same FOV of dual thermopile sensor can illuminate the measured object for ease of placement of object to be heated.

Abstract: A multi-shot moulding part structure includes a first structural part, an ink decoration layer, and a second structural part. The first structural part has a first area surface, a second area surface, and a joining surface located on the second area surface. The joining surface is non-parallel to the second area surface. The ink decoration layer is spread on the first area surface and the second area surface, but not on the joining surface. The second structural part is combined with the first structural part and covers the second area surface. The second structural part touches the joining surface. By the second structural part touching the joining surface of the first structural part that is not coated with the ink decoration layer, the structural bonding strength between the first structural part and the second structural part is enhanced.

Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.

Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A multidrop network system includes N network devices. The N network devices include a master device and multiple slave devices, and each network device has an identification code as its own identification in the multidrop network system. The N network devices have N identification codes and obtain transmission opportunities in turn according to the N identification codes in each round of data transmission. Each network device performs a count operation to generate a current count value, and when the identification code of a network device is the same as the current count value, this network device obtains a transmission opportunity. After a device obtains the transmission opportunity, it determines whether a cut-in signal from another network device is observed in a front duration of a predetermined time slot, and then determines whether to abandon/defer the right to start transmitting in the remaining duration of the predetermined time slot.

Abstract: Disclosed is a method for forming a crystalline protective polysilicon layer which does not create defective voids during subsequent processes so as to provide effective protection to devices underneath. In one embodiment, a method for forming a semiconductor device, includes: depositing a protective coating on a first polysilicon layer; forming an epitaxial layer on the protective coating; and depositing a second polysilicon layer over the epitaxial layer, wherein the protective coating comprises a third polysilicon layer, wherein the third polysilicon layer is deposited at a first temperature in a range of 600-700 degree Celsius, and wherein the third polysilicon layer in the protect coating is configured to protect the first polysilicon layer when the second polysilicon layer is etched.

Abstract: A heat dissipation module used for an electronic device is provided. The electronic device has a heat source. The heat dissipation module includes an evaporator, a plurality of heat conducting components, a pipe connected to the evaporator to form a loop, and a working fluid filled in the loop. An exterior of the evaporator has a heat conducting zone thermally contacted with the heat source to absorb heat generated from the heat source. The heat conducting components are disposed in the evaporator, located at an interior of the evaporator corresponding to the heat conducting zone. The heat conducting components are in pillar shape or rib shape respectively. The working fluid in liquid passes through the evaporator, absorbs heat, and is transformed into vapor to flow out of the evaporator. Each of the heat conducting components in rib shape is oriented in a flow direction of the working fluid.

Abstract: The present disclosure provides an apparatus for manufacturing a semiconductor structure. The apparatus includes a stage, an optical transceiver over the stage, configured to obtain a first profile of a first surface of a substrate, an acoustic transceiver over the stage, configured to obtain a second profile of a top surface of a photo-sensitive layer over the substrate, wherein the stage is adapted to be displaced based on the first profile and the second profile.

Abstract: The present disclosure provides a method for fabricating a semiconductor structure, including placing a wafer on a chuck, wherein the wafer is surrounded by a focus ring, the focus ring is supported by a first actuator, wherein the first actuator is in a cavity defined by the chuck and the edge ring, wherein the first actuator includes an outer ring disposed in the cavity, a piezoelectric layer apart from a top surface of the cavity, wherein an edge of the piezoelectric layer is fixed by the outer ring, and an inner ring disposed in the chamber at a center portion of the piezoelectric layer, performing plasma etch on a surface of the wafer, and controlling a distance between a gas distribution plate and a top surface of the focus ring to be less than a threshold value by the first actuator.

Abstract: A method for forming a layer includes following operations. A workpiece is received in an apparatus for deposition. The apparatus for deposition includes a chamber, a pedestal disposed in the chamber to accommodate the workpiece, and a ring disposed on the pedestal. The ring includes a ring body having a first top surface and a second top surface and a barrier structure disposed between the first top surface and the second top surface. A vertical distance is defined by a top surface of the barrier structure and a top surface of the workpiece. The vertical distance is between approximately 0 mm and approximately 50 mm. A target disposed in the apparatus for deposition is sputtered. A sputtered material is deposited onto a top surface of the workpiece to form a layer. The barrier structure alters an electrical density distribution during the depositing the sputter material.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.

Abstract: The present disclosure provides an apparatus for manufacturing a semiconductor structure. The apparatus includes a stage, an optical transceiver over the stage, configured to obtain a first profile of a first surface of a substrate, an acoustic transceiver over the stage, configured to obtain a second profile of a top surface of a photo-sensitive layer over the substrate, wherein the stage is adapted to be displaced based on the first profile and the second profile.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes forming a photo-sensitive layer on a first surface of a semiconductor substrate. The photo-sensitive layer has a top surface. The method also includes obtaining a first profile of the first surface of the semiconductor substrate, and obtaining a second profile of the top surface of the photo-sensitive layer. The method also includes calculating a vertical displacement profile of the semiconductor substrate according to the first profile and the second profile. An apparatus for manufacturing a semiconductor structure is also disclosed.

Abstract: In a method of diagnosing an RF generator of a laser produced plasma extreme ultra violet (LPP EUV) radiation source apparatus, a testing system is connected to the RF generator of the LPP EUV radiation source apparatus. An output power is measured by the testing system with changing an input power of the RF generator. Using a computer system, the measured output power is analyzed. Based on the analyzed measured output power, whether the RF generator is operating properly is determined.

Abstract: A device includes a laser source, an amplifier, an optical sensor and a spectrometer. The laser source is configured to produce a seed laser beam. The amplifier includes gain medium and a discharging unit. The discharging unit is configured to pump the gain medium for amplifying power of the seed laser beam. The optical sensor is coupled to the amplifier and configured for sensing an optical emission generated in the amplifier while the gain medium is discharging. The spectrometer is coupled with the optical sensor and configured to measure a spectrum of the optical emission.

Abstract: The present disclosure provides an apparatus for fabricating a semiconductor structure, including a chuck, an edge ring surrounding the chuck, wherein the edge ring comprises a cavity, a focus ring adjacent to an edge of the chuck and over the edge ring, and a first actuator in the cavity of the edge ring and engaging with the focus ring.

Abstract: The present disclosure provides a method for fabricating a magnetic semiconductor device, including receiving a semiconductor wafer, disposing the semiconductor wafer under a first electromagnetic element, wherein the first electromagnetic element comprises a primary dimension and a secondary dimension from a top view perspective, the primary dimension being greater than the secondary dimension, and displacing the semiconductor wafer along a predetermined path along the secondary dimension of the first electromagnetic element.

Abstract: The present disclosure provides a method for fabricating a magnetic semiconductor device, including receiving a semiconductor wafer, disposing the semiconductor wafer under a first electromagnetic element, wherein the first electromagnetic element comprises a primary dimension and a secondary dimension from a top view perspective, the primary dimension being greater than the secondary dimension, and displacing the semiconductor wafer along a predetermined path along the secondary dimension of the first electromagnetic element.

Abstract: A fan failure backup apparatus includes a first fan module and a second fan module. When a second control unit of the second fan module realizes that the first fan module is failed through a first control unit of the first fan module, and the second control unit realizes that the second fan module is not failed, the second control unit controls the second fan module to additionally enhance a pressure-flow characteristic of a second fan unit of the second fan module.