Patents by Inventor Wen-Chin Chiou

Wen-Chin Chiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6638868
    Abstract: A method and apparatus for implementing the method for preventing or reducing corrosion of copper containing features included in a semiconductor wafer in a chemical mechanical polishing (CMP) process the method providing at least one semiconductor wafer polishing surface including copper filled anisotropically etched features; polishing the at least one semiconductor wafer polishing surface according to a CMP process having a polishing pad surface contacting the at least one it semiconductor wafer polishing surface at least a portion of the polishing pad in electrically conductive communication with a conductive polishing platen; and, providing at least one electrically conductive pathway from the conductive polishing platen.
    Type: Grant
    Filed: May 7, 2002
    Date of Patent: October 28, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Tsu Shih, Kun Ku Hung, Wen-Hun Tung, Wen-Chin Chiou
  • Patent number: 6638853
    Abstract: A method for improving a photolithographic patterning process to avoid undeveloped photoresist contamination in a semiconductor manufacturing process including providing a semiconductor wafer having a process surface including a first anisotropically etched opening extending through a semiconductor wafer thickness portion including an underlying dielectric insulating layer; blanket depositing a polymeric resinous layer over the semiconductor wafer process surface to include filling the first anisotropically etched opening; curing the polymeric resinous layer by exposing the polymeric resinous layer to at least one of thermal or photonic energy to initiate polymer cross linking; chemically mechanically polishing (CMP) the polymeric resinous layer to substantially remove the polymeric resinous layer thickness above the process surface; and, forming a photolithographically patterned photoresist layer over the process surface for forming a second anisotropically etched opening overlying and encompassing the first
    Type: Grant
    Filed: July 3, 2002
    Date of Patent: October 28, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Hung-Wen Sue, Chung-Shi Liu, Wen-Chin Chiou, Keng-Chu Lin