Abstract: A composition, composite material, and copper clad laminate are provided. The composition includes 100 parts by weight of a compound having two epoxy groups, 20-80 parts by weight of a compound having at least two phenolic hydroxy groups, and 0.01-1.5 parts by weight of an ionic liquid. The ionic liquid is not imidazolium ionic liquid.

Abstract: An optical waveguide structure including a bottom layer, a middle waveguide layer, and a top cladding layer is provided. The middle waveguide layer is disposed on the bottom layer. The top cladding layer is disposed on the middle waveguide layer and covers the middle waveguide layer. The refractive index of the middle waveguide layer is greater than that of the bottom layer, and is greater than that of the top cladding layer. The optical waveguide structure has a first end region and a second end region. The middle waveguide layer in the first end region has a first end having a width gradually decreased toward the second end region. The top cladding layer in the second end region has a second end having a width gradually decreased away from the first end region.

Abstract: An optical waveguide structure including a bottom layer, a middle waveguide layer, and a top cladding layer is provided. The middle waveguide layer is disposed on the bottom layer. The top cladding layer is disposed on the middle waveguide layer and covers the middle waveguide layer. The refractive index of the middle waveguide layer is greater than that of the bottom layer, and is greater than that of the top cladding layer. The optical waveguide structure has a first end region and a second end region. The middle waveguide layer in the first end region has a first end having a width gradually decreased toward the second end region. The top cladding layer in the second end region has a second end having a width gradually decreased away from the first end region.

Abstract: An optical waveguide structure including a bottom layer, a middle waveguide layer, and a top cladding layer is provided. The middle waveguide layer is disposed on the bottom layer. The top cladding layer is disposed on the middle waveguide layer and covers the middle waveguide layer. The refractive index of the middle waveguide layer is greater than that of the bottom layer, and is greater than that of the top cladding layer. The optical waveguide structure has a first end region and a second end region. The middle waveguide layer in the first end region has a first end having a width gradually decreased toward the second end region. The top cladding layer in the second end region has a second end having a width gradually decreased away from the first end region.

Abstract: A solar cell with a molybdenum back electrode layer and a molybdenum selenide ohmic contact layer over the molybdenum back electrode, is provided. The molybdenum selenide layer includes an accurately controlled thickness. A distinct interface exists between the molybdenum back electrode layer and the molybdenum silicide layer. The molybdenum silicide layer is produced by forming a molybdenum layer or a molybdenum nitride layer or a molybdenum oxide layer over an initially formed molybdenum layer such that an interface exists between the two layers. A selenization and sulfurization process is carried out to selectively convert the molybdenum-containing layer to molybdenum selenide but not the original molybdenum back electrode layer which remains as a molybdenum layer.

Abstract: A semiconductor structure includes a semiconductor substrate, and an NMOS device at a surface of the semiconductor substrate, wherein the NMOS device comprises a Schottky source/drain extension region. The semiconductor structure further includes a PMOS device at the surface of the semiconductor substrate, wherein the PMOS device comprises a source/drain extension region comprising only non-metal materials. Schottky source/drain extension regions may be formed for both PMOS and NMOS devices, wherein the Schottky barrier height of the PMOS device is reduced by forming the PMOS device over a semiconductor layer having a low valence band.

Abstract: A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control.

Abstract: A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the semiconductor substrate.

Abstract: An electromagnetic shielding composite includes a polymer and a carbon nanotube film structure. The carbon nanotube structure includes a number of carbon nanotubes disposed in the polymer. The number of carbon nanotubes are parallel with each other.

Abstract: A method includes placing at least two substrates on a substrate carrier at a distance from one another, placing the substrate carrier in a reaction chamber, depositing a precursor on the at least two substrates, and performing a first annealing process on the at least two substrates. The at least two substrates include a first content of a first material. The distance between the at least two substrates is based on the first content of the first material and at least one processing parameter. The disclosed method advantageously provides for improved Na-dosing control.

Abstract: A method for forming a thin film solar cell that includes one or more moisture barrier layer made of a water-insoluble material for protection against water and oxygen damage to the top electrode layer material is disclosed.

Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.

Abstract: Disclosed is a prepreg, including a reinforcing material and a polymer, wherein the polymer is polymerized from a monomer, an oligomer, or combinations thereof of an organic rod-like molecule. The organic rod-like molecule has at least one photo-polymerizable group. The organic rod-like molecule has the magnetic susceptibility along its long-axis direction (M1) greater than the magnetic susceptibility along other directions (M2), and the magnetic susceptibility ratio (M1/M2) is greater than 0.01 and less than 1.

Abstract: The disclosure relates to a chip carrier, suitable for being inserted into a corresponding substrate. The light emitting/receiving chip mounted on the chip carrier is disposed within the corresponding substrate and aligned to the waveguide embedded in the corresponding substrate with an appropriate distance.

Abstract: A method for manufacturing a CIGS thin film photovoltaic device includes forming a back contact layer on a substrate, forming an Se-rich layer on the back contact layer, forming a precursor layer on the Se-rich layer by depositing copper, gallium and indium resulting in a first interim structure, annealing or selenizing the first interim structure, thereby forming Cu/Se, Ga/Se or CIGS compounds along the interface between the back contact layer and the precursor layer and resulting in a second interim structure, and selenizing the second interim structure, thereby converting the precursor layer into a CIGS absorber layer on the back contact layer.

Abstract: Proton exchange membrane compositions having high proton conductivity are provided. The proton exchange membrane composition includes a hyper-branched polymer, wherein the hyper-branched polymer has a DB (degree of branching) of more than 0.5. A polymer with high ion conductivity is distributed uniformly over the hyper-branched polymer, wherein the hyper-branched polymer has a weight ratio equal to or more than 5 wt %, based on the solid content of the proton exchange membrane composition.

Abstract: In a method of forming a CIGS film absorption layer, a first precursor is provided including a first substrate having a major process precursor film formed thereon, the major process precursor film containing two or more of Cu, In, Ga, and Se. A second precursor is provided including a second substrate having an element supplying precursor film formed thereon, the element supply precursor film containing two or more of Cu, In, Ga and Se. The precursors are oriented with the major process precursor film and element supplying precursor film facing one another so as to allow diffusion of elements between the films during annealing. The oriented films are annealed and then the precursors are separated, wherein the CIGS film is formed over the first substrate and either a CIGS film or a precursor film containing two or more of Cu, In, Ga, and Se remains over the second substrate.

Abstract: A method and apparatus for forming a solar cell can include a heater apparatus having one or more heater elements in a deposition processing system, a front cover covering the one or more heater elements from a front side, and a back metal reflector mating with the front cover on a back side and enclosing the one or more heater elements. The method can include disposing a plurality of substrates about a plurality of surfaces of a substrate apparatus that is operatively coupled to sequentially feed a substrate within a vacuum chamber, forming an absorber layer over a surface of each one of the plurality of substrates and heating the surface of each one of the plurality of substrates with the heater apparatus as described above.

Abstract: A method generally comprises providing heat to a substrate in at least one buffer chamber and transferring the substrate to at least one deposition chamber that is coupled to the buffer chamber via an conveyor. The method also includes depositing a first set of a plurality of elements, using sputtering, and a second set of a plurality of elements, using evaporation, onto at least a portion of the substrate in the deposition chamber.

Abstract: A solar cell includes an absorber layer formed of a CIGAS, copper, indium, gallium, aluminum, and selenium. A method for forming the absorber layer provides for using an indium-aluminum target and depositing an aluminum-indium film as a metal precursor layer using sputter deposition. Additional metal precursor layers such as a CuGa layer are also provided and a thermal processing operation causes the selenization of the metal precursor layers. The thermal processing operation/selenization operation converts the metal precursor layers to an absorber layer. In some embodiments, the absorber layer includes a double graded chalcopyrite-based bandgap.