Abstract: A display panel includes a substrate and a plurality of pixel structures disposed on the substrate. Each of the pixel structures includes a first light-emitting element, a second light-emitting element, and a third light-emitting element. The first light-emitting element is disposed on the substrate and configured to generate a first colored light. A light output surface of the first light-emitting element includes a combined region. The second light-emitting element is disposed on a part of the combined region and configured to generate a second colored light. The third light-emitting element is disposed on the other part of the combined region and configured to generate a third colored light.

Abstract: A sapphire substrate including a plurality of tapered structures is provided. The tapered structures are protruded from an upper surface of the sapphire substrate. The crystalline direction of the upper surface is (0001). Each of the tapered structures has three crystalline surfaces of a first group, three crystalline surfaces of a second group, and an axis perpendicular to the upper surface and passing through the apex of the tapered structure. The crystalline surfaces of the first group are rotationally symmetric to the axis by 120 degrees, and the crystalline surfaces of the second group are rotationally symmetric to the axis by 120 degrees. The crystalline direction of one of the crystalline surfaces of the first group is (1102). The crystalline direction located in the center of one of the crystalline surfaces of the second group is (1123).

Abstract: A light-emitting device including a first type doped semiconductor layer, a second type doped semiconductor layer, and a light-emitting layer is provided. The light-emitting layer is located between the first type doped semiconductor layer and the second type doped semiconductor layer. The light-emitting layer includes a plurality of barrier layers and a plurality of quantum well layers. Each of the quantum well layers is located between two adjacent barrier layers, and the quantum well layers include a germanium dopant.

Abstract: Micro-fabrication forms a plurality of stiff vertical micro probes on the front surface of a ceramic substrate and a plurality of contacts on the back surface of the ceramic substrate. Photolithography, various etching technologies and electroplating are used to form the micro probes on the surface of the ceramic substrate. The produced micro probes are mechanically strong and consequently have a long duty life. Moreover, the probes can be arranged into a high-density planar array to conform to the newest integrated circuit devices which have dense I/O terminal arrays.