Abstract: Provided are a package structure having a joint structure and a method of forming the same. The package structure includes: a first under bump metallurgy (UBM) structure disposed on a first dielectric layer, wherein the first UBM structure at least comprises: a barrier layer embedded in the first dielectric layer; and an upper metal layer disposed over the barrier layer, wherein a sidewall of the barrier layer is laterally offset outward from a sidewall of the upper metal layer, and a portion of a top surface of the barrier layer is exposed by the first dielectric layer; and a solder layer disposed on the first UBM structure and contacting the upper metal layer.

Abstract: A semiconductor structure includes a first interposer; a second interposer laterally adjacent to the first interposer, where the second interposer is spaced apart from the first interposer; and a first die attached to a first side of the first interposer and attached to a first side of the second interposer, where the first side of the first interposer and the first side of the second interposer face the first die.

Abstract: Some implementations described herein provide techniques and apparatuses for a stacked semiconductor die package. The stacked semiconductor die package may include an upper semiconductor die package above a lower semiconductor die package. The stacked semiconductor die package includes one or more rows of pad structures located within a footprint of a semiconductor die of the lower semiconductor die package. The one or more rows of pad structures may be used to mount the upper semiconductor die package above the lower semiconductor die package. Relative to another stacked semiconductor die package including a row of dummy connection structures adjacent to the semiconductor die that may be used to mount the upper semiconductor die package, a size of the stacked semiconductor die package may be reduced.

Abstract: A package structure and methods for forming the package structure are provided. The package structure includes a package component, an encapsulant disposed around the package component, and a redistribution structure disposed over the package component and the encapsulant. The package component includes a substrate, a protection structure, which includes an organic material, over a first surface of the substrate, and a multi-layered structure encapsulated by the protection structure. Sidewalls of the multi-layered structure are spaced apart from the encapsulant by the protection structure.

Abstract: A system on chip (SoC) die package is attached to a redistribution structure of a semiconductor device package such that a top surface of the SoC die package is above a top surface of an adjacent memory die package. This may be achieved through the use of various attachment structures that increase the height of the SoC die package. After encapsulating the memory die package and the SoC die package in an encapsulation layer, the encapsulation layer is grinded down. The top surface of the SoC die package being above the top surface of the adjacent memory die package results in the top surface of the SoC die package being exposed through the encapsulation layer after the grinding operation. This enables heat to be dissipated through the top surface of the SoC die package.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure, a backside dielectric layer, conductive terminals, an electronic device, and an underfill is provided. The semiconductor die laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes redistribution conductive layers and thermal enhancement structures electrically insulated from the redistribution conductive layers, and the thermal enhancement structures are thermally coupled to the semiconductor die. The backside dielectric layer is disposed on the redistribution circuit structure. The conductive terminals penetrate through the backside dielectric layer. The electronic device is disposed over the backside dielectric layer and electrically connected to the redistribution circuit structure through the conductive terminals.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-shaped structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-shaped structures on the petal-shaped structure. Therefore, the composite field emission source with high strength and nano coral-shaped structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: A method of electrophoretic deposition includes: providing an electrophoresis tank, an anode substrate, and a cathode substrate; disposing the anode substrate and the cathode substrate oppositely in the electrophoresis tank; adjusting relative positions of the cathode substrate and the anode substrate for varying each of the distances between corresponding regions on the cathode substrate and the anode substrate; and inputting cathode voltage and anode voltage respectively to a cathode electrode of the cathode substrate and a anode electrode of the anode substrate for performing the electrophoretic deposition.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film and thereby growing a plurality of nano coral-like structures on the petal-like structure. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: An improved structure of a moving record device for transportation tools is provided in the present invention. It has a moving record device which is composed of a systematic framework having a wireless transceiver module, a moving record device, a computing equipment and a wireless communication module. The device can not only record all the status when a transportation tool is moving, but also remotely control or monitor the location and status of the transportation tool via internet by a computer or mobile phone.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: The present invention provides a monitor-displayed device for car rear vision. It is to install monitors on a dashboard in the car or the car frame on two sides of the front windscreen. The traditional two rear vision mirrors of the car are replaced by the monitors. Image data taken by an image receiver can be displayed synchronously. Rear side image data can be provided to the driver with a broader viewing angle.

Abstract: A recording device for a moving vehicle includes an image receiving unit, a speed calculating unit, a time unit, a positioning unit and a storing unit. The recording device records outside images when the vehicle moves via a camera lens of the image receiving unit. The speed calculating unit calculates speed using a speed gauge linked to the vehicle. Users can adjust time according to their demand by utilizing a time calculating function built in the time unit. Coordinates of vehicle location are obtained by a positioning unit linked to a satellite. The data mentioned above is stored in the storing unit. The device is installed inside the vehicle before the vehicle is factory assembled. When users start the vehicle, the recording device starts recording. When users turn off the vehicle and leave, the recording device can be re-started by using a switch. The image receiving unit keeps recording images.

Abstract: A high frequency SAW device and the substrate thereof are disclosed. The disclosed high frequency SAW device does not need to use the conventional and expensive sapphire substrate as its substrate. Besides, the disclosed substrate for a high-frequency SAW device can replace the conventional sapphire substrate in the use of the substrate for a high frequency SAW device. The disclosed high frequency SAW device comprises: a substrate; a first buffering layer forming on the surface of the substrate; a second buffering layer forming on the surface of the first buffering layer; a piezoelectric layer forming on the surface of the second buffering layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface of or beneath the piezoelectric layer.

Abstract: A high frequency surface acoustic wave device is disclosed. The disclosed high frequency surface acoustic wave device can modulate its central frequency easily, by changing the thickness of its nanocrystalline diamond layer. The disclosed high frequency surface acoustic wave device comprises: a silicon substrate; a nanocrystalline diamond layer located above the silicon substrate; a piezoelectric layer formed on the surface of the nanocrystalline diamond layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface or beneath of the piezoelectric layer. Besides, the thickness of the nanocrystalline diamond layer is preferably between 0.5 ?m and 20 ?m. The piezoelectric layer is preferably made of ZnO, AlN, or LiNbO3, wherein the thickness of the piezoelectric layer is preferably between 0.5 ?m and 5 ?m.

Abstract: A high frequency SAW device and the substrate thereof are disclosed. The disclosed high frequency SAW device does not need to use the conventional and expensive sapphire substrate as its substrate. Besides, the disclosed substrate for a high-frequency SAW device can replace the conventional sapphire substrate in the use of the substrate for a high frequency SAW device. The disclosed high frequency SAW device comprises: a substrate; a first buffering layer forming on the surface of the substrate; a second buffering layer forming on the surface of the first buffering layer; a piezoelectric layer forming on the surface of the second buffering layer; an input transformation unit; and an output transformation unit, wherein the input transformation unit and the output transformation unit are formed in pairs on the surface of or beneath the piezoelectric layer.

Abstract: Disclosed is a method of fabricating carbon nanotubes and carbon nano particles, the method comprising: providing a plurality of carbon micro carriers on a silicon substrate; forming a plurality of carbon nano particles on the carbon micro carrier by a first gas; and reacting with a second gas to provide a plurality of carbon nanotubes. Thus the carbon nanotube can be formed without the use of a metal catalyst. The carbon nanotubes can easily separate from each other without the problem of non-uniformity, because the carbon micro carrier used is in a microscale size.

Abstract: The present invention relates to a high frequency surface acoustic wave device, which may be manufactured by the same manufacturing equipment, and with the same material, as those required for manufacturing a low frequency surface acoustic wave device. The disclosed high frequency surface acoustic wave device comprises: a piezoelectric substrate; a high acoustic velocity layer formed on the surface of the piezoelectric substrate whose acoustic velocity of the surface acoustic wave is larger than 5000 m/sec; an input transducing part; and an output transducing part; wherein the input transducing part and the output transducing part are formed in pair on or below the surface of the high acoustic velocity layer. Besides, the high acoustic velocity layer is preferably made of aluminum oxide, and formed on the surface of the piezoelectric substrate by an electron-beam evaporation process. The thickness thereof is preferably between 2 ?m and 20 ?m.

Abstract: A method of fabricating a composite field emission source is provided. A first stage of film-forming process is performed by using RF magnetron sputtering, so as to form a nano structure film on a substrate, in which the nano structure film is a petal-like structure composed of a plurality of nano graphite walls. Afterward, a second stage of film-forming process is performed for increasing carbon accumulation amount on the nano structure film. Therefore, the composite field emission source with high strength and nano coral-like structures can be obtained, whereby improving the effect and life of electric field emission.

Abstract: Disclosed is a method of fabricating carbon nanotubes and carbon nano particles, the method comprising: providing a plurality of carbon micro carriers on a silicon substrate; forming a plurality of carbon nano particles on the carbon micro carrier by a first gas; and reacting with a second gas to provide a plurality of carbon nanotubes. Thus the carbon nanotube can be formed without the use of a metal catalyst. The carbon nanotubes can easily separate from each other without the problem of non-uniformity, because the carbon micro carrier used is in a microscale size.