Abstract: A semiconductor device includes a substrate, an initial layer, and a superlattice stack. The initial layer is located on the substrate and includes aluminum nitride (AlN). The superlattice stack is located on the initial layer and includes a plurality of first films, a plurality of second films and at least one doped layer, and the first films and the second films are alternately stacked on the initial layer, wherein the at least one doped layer is arranged in one of the first films and the second films, and dopants of the at least one doped layer are selected from a group consisting of carbon, iron, and the combination thereof.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Abstract: A polyimide copolymer represented by formula (I) or formula (II) is provided. In formula (I) or formula (II), B is a cycloaliphatic group or aromatic group, A is an aromatic group, R is hydrogen or phenyl, and m and n are 20-50. The invention also provides a method for fabricating a patterned metal oxide layer.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched.

Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

Abstract: An optical passivation film includes Tii-xAlxOy:Z, where Z represents a halogen, x is from 0.05 to 0.95, and y is greater than 0. A method for manufacturing the optical passivation film includes preparing a spray solution including an aluminium oxide precursor, a titanium oxide precursor, a halogen solution and a solvent. A substrate is disposed on a heating device to heat the substrate. The spray solution is sprayed on the substrate to form the optical passivation film. A solar cell having the optical passivation film is also provided.

Abstract: A polyimide copolymer represented by formula (I) or formula (II) is provided. In formula (I) or formula (II), B is a cycloaliphatic group or aromatic group, A is an aromatic group, R is hydrogen or phenyl, and m and n are 20-50. The invention also provides a method for fabricating a patterned metal oxide layer.

Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device for disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

Abstract: An anti-reflection coating (ARC) stacked structure including a first ARC layer and a second ARC layer is provided. The first ARC layer is a continuous layer and the second ARC layer, located over the first ARC layer, is formed in fractals. In addition, a solar cell including the ARC stacked structure is further provided.

Abstract: A bifacial solar cell including a semiconductor substrate of a first conductivity type, a fixed charge layer, a first grid electrode, a semiconductor layer of a second conductivity type and a second grid electrode are provided. The fixed charge layer is located on a rear surface of the semiconductor substrate. The first grid electrode is located over the rear surface of the semiconductor substrate and electrically connected to the rear surface of the semiconductor substrate by penetrating through the fixed charge layer. The semiconductor layer is located on the front surface of the semiconductor layer. The second grid electrode is located over and electrically connected to the semiconductor layer.

Abstract: A method of fabricating a solar cell is provided. A dopant material layer is deposited on a front surface of a semiconductor substrate and an over-depositing dopant layer is also formed on a back surface of the semiconductor substrate, wherein dopants of the dopant material layer diffuse into the front surface of the semiconductor substrate to form a doping layer and dopants of the over-depositing dopant layer diffuse into the back surface of the semiconductor substrate to form a doping residual layer during said depositing process. The dopant material layer and the over-depositing dopant layer are removed. An anti-reflective layer is formed on the doping layer. After the doping residual layer on the semiconductor substrate is removed to expose the back surface of the semiconductor substrate, a passivation layer is formed on the exposed back surface of the semiconductor substrate. Then, a first electrode and a second electrode are formed.

Abstract: An atomic layer deposition apparatus is provided. The atomic layer deposition apparatus includes a reaction chamber, a first heater, a second heater, a first gas supply system, a second gas supply system and a vacuum system. The vacuum system is connected to the reaction chamber. The reaction chamber includes a preheating chamber and a plating chamber connected to the preheating chamber. The first heater is for heating the preheating chamber. The first gas supply system is connected to the preheating chamber. The second heater is for heating the plating chamber. The second gas supply system is connected to the plating chamber.

Abstract: A passivation layer structure of a solar cell, disposed on a substrate, is provided. The passivation layer structure has a first passivation layer and a second passivation layer. The first passivation layer is disposed on the substrate. The second passivation layer is disposed between the substrate and the first passivation layer, and the material of the second passivation layer is an oxide of the material of the substrate. Since the second passivation layer is disposed between the substrate and the first passivation layer, the surface passivation effect and carrier lifetime of a photoelectric device are enhanced, and a photoelectric conversion efficiency of the solar cell is increased as well.