Patents by Inventor Wen-Ching Tung

Wen-Ching Tung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • High voltage semiconductor element and operating method thereof
    Patent number: 8848325
    Abstract: A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
    Type: Grant
    Filed: February 21, 2012
    Date of Patent: September 30, 2014
    Assignee: Macronix International Co., Ltd.
    Inventors: Hsin-Liang Chen, Wen-Ching Tung
  • HIGH VOLTAGE SEMICONDUCTOR ELEMENT AND OPERATING METHOD THEREOF
    Publication number: 20130214821
    Abstract: A high voltage semiconductor element and an operating method thereof are provided. The high voltage semiconductor element comprises a high voltage metal-oxide-semiconductor transistor (HVMOS) and a NPN type electro-static discharge bipolar transistor (ESD BJT). The HVMOS has a drain and a source. The NPN type ESD BJT has a first collector and a first emitter. The first collector is electronically connected to the drain, and the first emitter is electronically connected to the source.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 22, 2013
    Applicant: MACRONIX INTERNATIONAL CO., LTD.
    Inventors: Hsin-Liang Chen, Wen-Ching Tung