Abstract: Provided are semiconductor die flip chip packages and semiconductor die flip chip package components where certain properties of the packages/components are controlled to facilitate management of the package stresses. Also provided are fabrication methods for such packages and package components. For instance, the thickness of a die can be controlled such that the stress generated/experienced by the die is minimized. As such, the package stress is managed to suitable levels for incorporation of a low-K Si die and/or a thin package substrate. Further, a thin die can be attached to a heat spreader to increase the rigidity for easier handling during fabrication of the semiconductor die flip chip package.

Abstract: Provided are semiconductor die flip chip packages and semiconductor die flip chip package components where certain properties of the packages/components are controlled to facilitate management of the package stresses. Also provided are fabrication methods for such packages and package components. For instance, the thickness of a die can be controlled such that the stress generated/experienced by the die is minimized. As such, the package stress is managed to suitable levels for incorporation of a low-K Si die and/or a thin package substrate. Further, a thin die can be attached to a heat spreader to increase the rigidity for easier handling during fabrication of the semiconductor die flip chip package.

Abstract: Provided are semiconductor die flip chip packages and semiconductor die flip chip package components where certain properties of the packages/components are controlled to facilitate management of the package stresses. Also provided are fabrication methods for such packages and package components. For instance, the thickness of a die can be controlled such that the stress generated/experienced by the die is minimized. As such, the package stress is managed to suitable levels for incorporation of a low-K Si die and/or a thin package substrate. Further, a thin die can be attached to a heat spreader to increase the rigidity for easier handling during fabrication of the semiconductor die flip chip package.

Abstract: Provided are semiconductor low-K Si die wire bonding packages with package stress control and fabrication methods for such packages. The packages include molding interface material applied onto the low-K Si die. In general, the molding interface material is selectively applied onto the low-K Si die surface in order to minimize to safe levels the package stress experienced by the low-K Si die. Selective application includes defining various combinatorial patterns of coated and non-coated regions. In addition, selective application may also include a general application of molding interface material to create a stress buffer zone. The results are packages with less stress experienced by the low-K Si die and so improved reliability (in compliance with industry specifications).

Abstract: The present invention is directed to a new bonding pad structure that includes a copper pad and a pad surface finish comprising multiple layers of solder. The multiple layers of solder include at least a layer of eutectic solder (or a layer of pure-Sn solder) covering the copper pad and a layer of high-Pb solder covering the layer of eutectic solder (or the layer of pure-Sn solder). Since the layer of high-Pb solder is significantly thicker than the eutectic solder layer (or the layer of pure-Sn solder), there is insufficient tin supply in the eutectic solder (or the layer of pure-Sn solder) for forming a thick Cu/Sn intermetallic layer on the copper pad. Instead, a thin Cu/Sn intermetallic layer is formed on the copper pad and there is less likelihood of forming a crack in the thin Cu/Sn intermetallic layer.

Abstract: Provided are a semiconductor low-K Si die flip chip package with warpage control and fabrication methods for such packages. The packages include heat spreaders that are attached to the low-K Si die and packaging substrate. In general, the modulus of the thermal interface material, which is used to attach the heat spreader to the low-K Si die, is selected as high as possible relative to other commercially available thermal interface materials. On the other hand, the modulus of the adhesive, which is used to attach the heat spreader via an optional stiffener to the substrate, is selected as low as possible relative to other commercially available adhesives. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the surface to which it is ultimately bound. Moreover, the low-K Si die and package reliabilities are thereby enhanced.

Abstract: Provided are a semiconductor flip chip package with warpage control and fabrication methods for such packages. The packages of the present invention include heat spreader lids that are rigidly attached to the die or packaging substrate with a bond that can withstand the considerable bowing pressures caused by the CTE mismatch between the die and substrate. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the PCB board to which it is ultimately bound. Package reliability is thereby also enhanced, particularly for large die sizes.

Abstract: Provided are a semiconductor low-K Si die flip chip package with warpage control and fabrication methods for such packages. The packages include heat spreaders that are attached to the low-K Si die and packaging substrate. In general, the modulus of the thermal interface material, which is used to attach the heat spreader to the low-K Si die, is selected as high as possible relative to other commercially available thermal interface materials. On the other hand, the modulus of the adhesive, which is used to attach the heat spreader via an optional stiffener to the substrate, is selected as low as possible relative to other commercially available adhesives. The result is a package with less bowing and so improved co-planarity (in compliance with industry specifications) with the surface to which it is ultimately bound. Moreover, the low-K Si die and package reliabilities are thereby enhanced.

Abstract: A method for deplating defective capacitors comprising forming a plurality of capacitors on a semiconductor substrate, forming a plurality of metal contacts on the plurality of capacitors, and depositing a layer of photoresist on the semiconductor substrate. The photoresist layer is patterned so that the plurality of metal contacts are exposed, which are then contacted with an electrically conductive solution. The metal contacts, which are disposed over defective capacitors, are subsequently deplated. A method for forming a multi-chip module comprising forming a thin-film polymeric interconnect structure having a pair of sides, one of which is disposed on a silicon substrate having active or passive devices and the other of which has a computer chip mounted thereon. A multi-chip module formed by the method.

Abstract: Opto-electrical systems having electrical and optical interconnections formed in thin layers are disclosed. In one set of preferred embodiments, optical signals are conveyed between layers by respective vertical optical couplers disposed on the layers. In other preferred embodiments, optical signals are conveyed by stack optical waveguide coupling means. Yet other preferred embodiments have electrical via means formed in one or more layers to covey electrical signals between two or more layers.

Abstract: An optoreflective structure for reflecting an optical signal following a path defined by an optical waveguide comprising a first cladding layer having a first planar cladding surface; a waveguide disposed on the first cladding layer; and a second cladding layer disposed on the waveguide and having a second planar cladding surface. The first cladding layer, the second cladding layer and the waveguide terminate in a generally dove-tailed structure having a beveled planar surface. An optoreflector is disposed on the beveled planar surface for a changing direction of an optical signal passing through the waveguide. Methods of producing the optoreflective structure are disclosed.

Abstract: Provided are flip chip device assembly methods that integrate the solder joining and underfill operations of the assembly process. Solder joining of the die and substrate and curing of the underfill material between the die and substrate is accomplished in the same heating and cooling operation. As a result, the coefficient of thermal expansion (CTE) mismatch stresses incurred prior to application and curing of underfill by a device packaged according to the conventional technique having a separate heating and cooling operation following solder joining, are avoided. These stresses are of particular concern in smaller device size technologies (e.g., 0.13 microns and smaller) using low k dielectrics and large die sizes due the difference in CTP between the die and substrate.

Abstract: Methods of planarizing structures formed on the surfaces of substrates and wafers are disclosed. The methods form a planarizing layer over the surface and the structures, or the locations where the structures are to be formed, such that the top surface of the layer has low areas between the locations of the structures, and such that the low areas lie substantially within a plane which is below the tops of the structures. A polish-stop layer is thee formed over the low areas of the planarizing layer, the polish-stop layer being more resistant to polishing than the planarizing layer and, preferably, the structures. The resulting surface is then polished. The polishing may be accomplished by, for example, standard mechanical polishing, and chemical-mechanical polishing.

Abstract: A method of constructing an electronic circuit assembly comprising forming at least one electrode on a substrate; forming a layer of undercladding material upon the substrate and over the electrode; and forming a wave guide core layer on the layer of cladding material. The wave guide layer is patterned to produce at least one optical wave guide and exposed undercladding material. The method of constructing further includes forming a layer of overcladding material upon the exposed undercladding material and over the optical wave guide; forming at least one via aperture through the overcladding material and the undercladding material; and disposing a conductive material in the via aperture to produce an electronic circuit assembly.

Abstract: Three-dimensional opto-electronic modules having a plurality of opto-electronic (O/E) layers, with optical signals being routed between O/E layers within one or more three-dimensional volumes, are disclosed. In preferred embodiments, the O/E layers are disposed over and above one another with at least one of their edges aligned to one another. At least two of the O/E layers have waveguides with ends near the aligned edges. A plurality of Zconnector arrays are disposed between the O/E layers and within the three-dimensional volumes to provide a plurality of Zdirection waveguides. A first vertical optical coupler couples light from one waveguide in one O/E layer to a Z-direction waveguide, and a second vertical optical coupler couples the light from the Z-direction waveguide to a second waveguide in a second O/E layer. In further preferred embodiments, segments of the Z-connector arrays are held by a holding unit.

Abstract: An optical apparatus including an optical substrate having an embedded waveguide and an optical device adapted to receive light transmitted from an end of the waveguide. The optical apparatus includes a coupling structure for coupling the optical device to the substrate. The coupling structure has a thin metallic layer with an aperture. At least a portion of the optical device is disposed in the aperture. A method for making an optical apparatus comprising forming an optical substrate having a waveguide embedded therein; depositing a metal layer over an end of the waveguide; and depositing a polymeric layer over the metal layer. An aperture is formed in the metal layer and in the polymeric layer by removing a portion of the metal layer and a portion of the polymeric layer disposed over the end of the waveguide.

Abstract: A method for transferring devices to a device substrate is disclosed. In one embodiment, the method includes providing an array of devices on a carrier substrate having a generally horizontal surface, where the array comprises multiple device pluralities. The method includes tilting the device pluralities with respect to the generally horizontal surface of the carrier substrate. Each tilted device plurality is preferably in substantially the same pattern, and each tilted device plurality is placed on device regions on respective device substrates.

Abstract: A method of fabricating a multilayer interconnected substrate is disclosed. In one embodiment, the method includes providing a structure having a dielectric substrate having a first substantially planar surface and an opposing second substantially planar surface. A first conductive layer is disposed on the first substantially planar surface of the dielectric substrate, and an interface is present between the first conductive layer and the dielectric substrate. A blind via site is formed in the structure, and through the dielectric substrate to the interface between the first conductive layer and the dielectric substrate. The blind via site is filled with a conductive material by an electrolytic plating process.

Abstract: Disclosed is device and/or material integration into thin opto-electronic layers, which increase room for chip-mounting, and reduce the total system cost by eliminating the difficulty of optical alignment between opto-electronic devices and optical waveguides. Opto-electronic devices are integrated with optical waveguides in ultra thin polymer layers on the order of 1 &mgr;m to 250 &mgr;m in thickness.

Abstract: A method for electrically coupling electrode pads comprising forming a reflowed solder bump on a first electrode pad supported by a first substrate. The reflowed solder bump includes a solder material having a solder melting temperature. The method further includes forming a second electrode pad on a second substrate. The second electrode pad has an electrode structure defined by at least one converging continuous arcuate surface terminating in an apex and having an electrode material whose melting temperature is greater than the solder melting temperature of the solder material. The solder bump is heated to reflow or to soften the solder material, and subsequently the apex of the second electrode pad is pressed or inserted into the heated solder bump to couple the first electrode pad to the second electrode pad. A method for solder bump reflow comprising pressing or inserting the apex of an electrode into a reflowed solder bumps, and then reflowing solder material of the reflowed solder bump.