Abstract: An equipment for producing a film comprises a linear plasma generating module and a plasma distributing module. When the plasma flows out from the slit opening of the linear plasma generating module, the sleeve of the plasma distributing module rotates with respect to the liner plasma generating module, so that the plasma flowing out from the slit opening is further uniformly distributed outward by passing through the plurality of holes of the sleeve. The equipment for producing a film is applicable to selenization sulfuring process of the glass substrate.

Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: An apparatus for performing a selenization and sulfurization process on a glass substrate is introduced. A low-cost, non-toxic selenization and sulfurization process is performed on a large-area glass substrate in a normal-pressure environment with the apparatus to turn element selenium or sulfur into small molecules of high activity at high temperature by pyrolysis or by plasma, especially linear atmospheric pressure plasma. The process is finalized by dispersing the selenium or sulfur molecules uniformly and allowing the glass substrate to undergo reciprocating motion precisely, thereby achieving large-area, uniform selenization and sulfurization of the one-piece glass substrate.

Abstract: A high-temperature gas pressure measuring method includes a pressure measuring gas housing dividing step for dividing a pressure measuring gas housing into a pressure measuring room and a pressure referring room by a metal diaphragm; a gas introducing step for introducing high temperature gas into the pressure measuring room and introducing a reference pressure gas into the pressure referring room; a displacement measuring step for measuring a displacement of the metal diaphragm, wherein the displacement is caused by pressure difference between the two rooms in pressure measuring gas housing; and a pressure determining step for measuring the pressure of a high-temperature and/or corrosive to-measure pressure gas. The method dispenses with any corrosion-resistant and heat-resistant pressure sensing component and thus cuts costs.

Abstract: A selenization/sulfurization process apparatus for use with a single-piece glass substrate is characterized by two chambers for heating up a glass substrate quickly and performing selenization/sulfurization on the glass substrate to not only prevent the glass substrate from staying at a soaking temperature of a softening point for a long period of time but also increase the thin-film selenization/sulfurization temperature according to the needs of the process to thereby reduce the duration of soaking selenization/sulfurization, save energy, and save time. The glass substrate undergoes reciprocating motion in the chambers to not only attain uniform temperature throughout the glass substrate but also distribute a selenization/sulfurization gas across the glass substrate uniformly during the selenization/sulfurization operation. The recycled liquid selenium/sulfur and inert gas are reusable to thereby reduce material costs.

Abstract: The present disclosure relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present disclosure, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

Abstract: A selenization process apparatus for a glass substrate includes a first heating unit disposed in a chamber; a conveying heating module disposed in the chamber and below the first heating unit to not only drive the glass substrate to move but also heat the glass substrate, wherein a thermal mark otherwise formed as a result of contact between the conveying heating module and the glass substrate is reduced with an inert gas; a selenium gas feeding module connected to the chamber to introduce selenium gas into the chamber; and a gas recycling module connected to the chamber to recycle the selenium gas and the inert gas. The glass substrate is prevented from staying at a soaking temperature above the softening point for a long period of time. Selenization temperature is increased to speed up the selenization process. The selenium gas and the inert gas are recycled and reused.

Abstract: The present invention relates to a vapor deposition equipment for fabricating CIGS film, in which a Se vapor deposition module, a In/Ga/In linear vapor deposition module and a Cu linear vapor deposition module are integrated in an identical vacuum chamber, used for fabricating the CIGS absorber layers on a flexible solar cell substrate by an automatic manufacturing process in accordance with an unwinding module, a heating device, a heat reducing device, a speed-controlling roller module, a cooling module, and a winding module. Moreover, in the present invention, a film thickness measuring module is used for measures the thickness of the CIGS chalcopyrite crystalline film on the flexible solar cell substrate, and the thickness data of the CIGS chalcopyrite crystalline film would be transmitted to the electromechanical control module for being references of the parameter modulation of following fabricating process, and such way is so-called APC (Advanced Process Control) system.

Abstract: Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced.

Abstract: An apparatus for making an absorbing layer of a compound solar cell includes a transportation unit, a coating unit, a heat treatment unit, a measurement unit and a control unit. The transportation unit transports a substrate-based laminate. The coating unit provides coating liquid on the substrate-based laminate. The heat treatment unit treats the coated substrate-based laminate with heat to form a film. The measurement unit measures the film and provides correction parameters to the coating unit. The control unit controls the transportation unit, the coating unit, the heat treatment unit and the measurement unit.

Abstract: Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced.

Abstract: The present invention provides a method of assembling an LCD panel, an interface apparatus, and an assembling apparatus. In this invention, the first panel of the LCD panel is mounted on the interface apparatus before being pressed to the second panel of the LCD panel. Therefore, the complexity of the assembly room can be simplified and the cycle time in the assembly room can be shortened by moving the processes of flatly attaching and separating panels out of the assembly room. The interface apparatus is easier to be processed than a glass substrate during operation. The design of the interface apparatus can simplify the mechanisms in the assembly room and shorten the cycle time. The usage of the interface apparatus can reduce the alignment error caused by nonsynchronization of releasing static electricity suckers.

Abstract: A chemical mechanical polishing slurry is provided for the copper layer on a wafer. The slurry contains colloidal silica and a chemical etching agent composed of hydrogen peroxide, acetic acid, and phthalic acid. The hydrogen peroxide oxides the surface of the copper layer. The acetic acid then reacts with the copper oxide to form copper acetate. This selective and functional chemical reaction mechanism can speed up the polishing removal rate and reduce scratches. The phthalic acid functions as both a pH buffering agent and a complexing agent to make the reaction concentration at each point of the wafer surface more homogeneous. Therefore, the copper layer during the chemical mechanical polishing process has a high removal rate and uniformity.

Abstract: A method of polishing metal and barrier layer interconnect integrated with an extremely low dielectric constant material includes steps of (A) preparing a wafer composed of a copper layer and the extremely low dielectric constant material, (B) treating the copper layer chemically to produce a hard and brittle surface residual formed on the surface of the copper layer, (C) keeping polishing the surface residual by ultrasonic waves, (D) polishing a barrier layer of wafer by the ultrasonic waves, thereby polishing the wafer successfully.

Abstract: A compensating chemical mechanical wafer polishing apparatus and its related polishing method, which makes end point detection easy, minimizes slurry consumption, and requires less installation space and, in which a main polishing head of diameter smaller than the wafer and a compensating polishing head are used to polish the wafer, which is upwardly disposed in contact with the polishing heads. By means of the operation of the compensating polishing head to polish the wafer over the area where the main polishing head cannot effectively evenly polish, satisfactory polishing effect is achieved.

Abstract: A compensating chemical mechanical wafer polishing apparatus and its related polishing method, which makes end point detection easy, minimizes slurry consumption, and requires less installation space and, in which a main polishing head of diameter smaller than the wafer and a compensating polishing head are used to polish the wafer, which is upwardly disposed in contact with the polishing heads. By means of the operation of the compensating polishing head to polish the wafer over the area where the main polishing head cannot effectively evenly polish, satisfactory polishing effect is achieved.