Abstract: A probiotic composition for improving an effect of a chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is disclosed in the present disclosure. The probiotic composition comprises an effective amount of Lactobacillus paracasei GMNL-133, an effective amount of Lactobacillus reuteri GMNL-89, and a pharmaceutically acceptable carrier, wherein the Lactobacillus paracasei GMNL-133 was deposited in the China Center for Type Culture Collection on Sep. 26, 2011 under an accession number CCTCC NO. M 2011331, and the Lactobacillus reuteri GMNL-89 was deposited in the China Center for Type Culture Collection on Nov. 19, 2007 under an accession number CCTCC NO. M 207154. A method for improving the effect of the chemotherapeutic drug of Gemcitabine on inhibiting pancreatic cancer is further disclosed in the present disclosure.

Abstract: A method for fabricating a high electron mobility transistor (HEMT) includes the steps of forming a buffer layer on a substrate, forming a barrier layer on the buffer layer, forming a p-type semiconductor layer on the barrier layer, forming a gate electrode layer on the p-type semiconductor layer, and patterning the gate electrode layer to form a gate electrode. Preferably, the gate electrode includes an inclined sidewall.

Abstract: A biological energy signal acquisition and conversion device comprises: a signal acquisition module, enhancing a biological energy signal generated by an original biological energy body, and extracting the signal; a signal processing module, receiving the extracted original biological energy signal and filtering and amplifying the signal, and generating an output energy signal; and a signal output unit, being able to enhance an output function in cooperation with a magnetic substance, and output the energy signal to a biological energy carrier. By shortening the distance between the original biological energy body and a signal receiving unit, and using the magnetic substance to excite the original biological energy body, the strength of the received extracted original biological energy signal is enhanced, and the noise proportion is greatly reduced, reducing the technical complexity and costs for back-end signal processing, and improving the effect of a biological energy signal.

Abstract: An optical structure is characterized by improving a primary lens of a photovoltaic concentrator system. The optical structure is accomplished by properly dividing the primary lens, determining required optical operational regions, and arranging the optical operational regions basing on an identical location into an annular array, thereby forming the complete optical structure. The optical structure facilitates enhancing uniformity of light distribution throughout the optical operational regions, improving photoelectric conversion efficiency of a solar cell having the optical structure, and reducing operational distance between the primary lens and the solar cell.

Abstract: A laminator comprises a main body, having an upper lid mounted thereon, wherein a panel is settled at an obverse side of the upper lid and an assembly hole is formed on the panel. Besides, a touch screen, a spacer, an LCD and a control circuit are successively stacked and then assembled into the assembly hole so as to provide an integrated touch key unit at the panel. Thereby, functional setting items are displayed at the touch screen to allow a convenient, fast and stable operation of the laminator.

Abstract: A manufacturing method of a TFT is provided. A polysilicon island, a gate insulating layer and a gate are sequentially formed on a substrate. LDD regions are formed in the polysilicon island below two sides of the gate, while the polysilicon island below the gate is a channel region. A metal oxidation process is performed to form a gate oxidation layer on the gate. A source and a drain are formed in the polysilicon island below two sides of the gate oxidation layer. A dielectric layer is formed on the gate insulating layer. Portions of the dielectric layer and the gate insulating layer are removed to expose a portion of the source and drain, and a patterned dielectric layer and a patterned gate insulating layer are formed. A source and a drain conductive layers electrically respectively connected to the source and the drain are formed on the patterned dielectric layer.

Abstract: A method for fabricating thin film transistors is disclosed. An amorphous silicon film is formed on a substrated and selectively irradiated with a laser beam for lateral growth to form a plurality of polysilicon regions. The whole surface of the substrate is then oxidized and irradiated with exicer laser annealing.

Abstract: A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.

Abstract: A manufacturing method of a thin film transistor is provided. A buffer layer is formed on a substrate, and then a first and a second poly-silicon island are formed thereon. A gate-insulating layer is formed on the substrate, and a first and a second gate are formed thereon. A sacrificed layer is formed on the substrate and a photo-resist layer is formed thereon. The sacrificed layer above the first poly-silicon island is removed by using the photo-resist layer as a mask. A first ion implantation process is performed to form a first source/drain. The photo-resist layer is removed and a second ion implantation process is performed to form a second source/drain. At the same time, the second ion implantation process is used to implant ions into the buffer layer below the two sides of the second gate. A lightly-doped ion implantation process is performed after removing the sacrificed layer.

Abstract: An amelioration of a side-beam reflecting billboard structure includes a solid transparent acrylic board of an appropriate thickness having at least one light source at one of the sides thereof and at least one text-and-graphic surface at the front side thereof; and the characteristics of the invention are that at least one reflecting board applied with guiding ink is provided within the interior of the acrylic board and the reflecting board crisscrosses with the traveling direction of the light beams from the light source to the acrylic board, so that the light beams are thoroughly reflected on the guiding ink of reflecting board.

Abstract: The present invention relates to a display rack primarily including a main frame made of light-weight plastic corrugated board and a number of movable partitions supported by a number of supporting pieces fixed on the main frame so that the main frame is divided by the partitions into a number of holding rooms. The present invention is characterized in that the corrugated board of the main frame has a plurality of grooved rails longitudinally disposed in parallel. The supporting pieces are made of hard material and include at least one blocking extension strip at one side thereof which is vertical to the surface of the supporting pieces. The surface of the supporting piece is fitted with a locking groove near the bottom end of the blocking extension strip in order that the protruding blocking extension strip of the supporting piece is able to be inserted into the grooved rails while the locking groove near the bottom end of the blocking extension strip is fixed on the surface of the main frame.