Abstract: The present disclosure discloses an image processing apparatus having lens color-shading correction mechanism. A first and a second calibration circuits perform lens color-shading correction on an input image according to a first and a second calibration parameters to generate a first and a second calibrated images. A first and a second statistic circuits perform statistic on the first and the second calibrated images to generate a first and a second statistic results.

Abstract: A positive and negative electrode material and a preparation method thereof are provided. The positive and negative electrode material includes a powder, a first seed growth layer and a second graft growth layer. A material of the powder includes graphite, silicon based material, lithium titanate, tin oxide, tin alloy, lithium nickel cobalt manganese oxide, lithium nickel cobalt aluminum oxide or lithium iron phosphate. The first seed growth layer is formed radially on a surface of the powder, and the second graft growth layer is radially connected to the first seed growth layer.

Abstract: A lithium ion battery silicon carbon electrode material and a preparation method thereof are provided. The lithium ion battery silicon carbon electrode material includes a graphite particle and a resin carbon layer. The resin carbon layer is smoothly coated on a surface of the graphite particle, and silicon or a silicon compound and a conductive material are coated in the resin carbon layer.

Abstract: An electrode material and a preparation method thereof are provided. The electrode material includes a particle and a charged irregular geometric porous structure disposed on the surface of the particle. A material of the particle includes silicon, silicon oxide, metal, metal oxide, carbon, graphite or a composite material thereof.

Abstract: A manufacturing method of graphene film includes the steps of: disposing a substrate in a reaction chamber including an inlet and an outlet; providing a metallic catalytic material into the reaction chamber; providing a reducing gas into the reaction chamber; raising the temperature of the reaction chamber to a deposition temperature; providing a carbon-containing gas into the reaction chamber; and generating a plurality of carbon atoms from the carbon-containing gas under the assistance of the metallic catalytic material and the atoms deposited on the substrate to form a graphene film. The manufacturing method of graphene film is capable of depositing a graphene film on the substrate and is advantageous for a transfer-free process in the following application.

Abstract: The present invention relates to a resistive random-access memory, including: a bottom electrode; a resistive switch layer disposed on the bottom electrode, including a first switch layer, a second switch layer, and a filament path control layer, wherein the first switch layer is interposed between the bottom electrode and the filament path control layer, and the filament path control layer is interposed between the first switch layer and the second switch layer; and a top electrode disposed on the second switch layer, wherein the filament path control layer includes one or more micro-pores. The present invention also relates to a memory array which includes a substrate and a plurality of the above-mentioned resistive random access memories, wherein the resistive random access memories are disposed on the substrate.